Impact of the presence of Mo carbide species prepared ex situ in Mo/HZSM-5 on the catalytic properties in methane aromatization

2018 ◽  
Vol 558 ◽  
pp. 67-80 ◽  
Author(s):  
Mustafizur Rahman ◽  
Apoorva Sridhar ◽  
Sheima J. Khatib
2021 ◽  
Vol 23 ◽  
pp. 101030
Author(s):  
Kitirote Wantala ◽  
Totsaporn Suwannaruang ◽  
Janthip Palalerd ◽  
Prae Chirawatkul ◽  
Narong Chanlek ◽  
...  

1999 ◽  
Vol 5 (S2) ◽  
pp. 926-927 ◽  
Author(s):  
C.E. Kliewer ◽  
M.M. Disko ◽  
S.L Soled ◽  
G.J. DeMartin

The microstructural and chemical characterization of catalysts is not only integral to their initial development but also to understanding and controlling their behavior over time. To better elucidate the morphology of these materials and relate physical properties to catalytic properties (e.g., activity, selectivity, etc.), “ex-situ” methods for studying catalysts under reactive conditions have been developed.Because conventional transmission electron microscopy (CTEM) is conducted under high vacuum conditions, it is difficult to replicate the exact chemical environment of a catalyst (e.g., high pressure, variable gas mixtures, etc) within the TEM. Consequently, most analyses focus on comparing “fresh” and “spent” materials. In general, this methodology provides useful structural information albeit with limitations associated with the comparison of dissimilar regions and the effects of sampling inhomogenieties.


2003 ◽  
Vol 253 (1) ◽  
pp. 271-282 ◽  
Author(s):  
Z Sobalı́k ◽  
Z Tvarůžková ◽  
B Wichterlová ◽  
V Fı́la ◽  
Š Špatenka

2021 ◽  
pp. 101286
Author(s):  
Kitirote Wantala ◽  
Totsaporn Suwannaruang ◽  
Janthip Palalerd ◽  
Prae Chirawatkul ◽  
Narong Chanlek ◽  
...  

Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove ◽  
R. T. Tung

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.


Author(s):  
L.D. Schmidt ◽  
K. R. Krause ◽  
J. M. Schwartz ◽  
X. Chu

The evolution of microstructures of 10- to 100-Å diameter particles of Rh and Pt on SiO2 and Al2O3 following treatment in reducing, oxidizing, and reacting conditions have been characterized by TEM. We are able to transfer particles repeatedly between microscope and a reactor furnace so that the structural evolution of single particles can be examined following treatments in gases at atmospheric pressure. We are especially interested in the role of Ce additives on noble metals such as Pt and Rh. These systems are crucial in the automotive catalytic converter, and rare earths can significantly modify catalytic properties in many reactions. In particular, we are concerned with the oxidation state of Ce and its role in formation of mixed oxides with metals or with the support. For this we employ EELS in TEM, a technique uniquely suited to detect chemical shifts with ∼30Å resolution.


Author(s):  
K. Barmak

Generally, processing of thin films involves several annealing steps in addition to the deposition step. During the annealing steps, diffusion, transformations and reactions take place. In this paper, examples of the use of TEM and AEM for ex situ and in situ studies of reactions and phase transformations in thin films will be presented.The ex situ studies were carried out on Nb/Al multilayer thin films annealed to different stages of reaction. Figure 1 shows a multilayer with dNb = 383 and dAl = 117 nm annealed at 750°C for 4 hours. As can be seen in the micrograph, there are four phases, Nb/Nb3-xAl/Nb2-xAl/NbAl3, present in the film at this stage of the reaction. The composition of each of the four regions marked 1-4 was obtained by EDX analysis. The absolute concentration in each region could not be determined due to the lack of thickness and geometry parameters that were required to make the necessary absorption and fluorescence corrections.


Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove

The silicides CoSi2 and NiSi2 are both metallic with the fee flourite structure and lattice constants which are close to silicon (1.2% and 0.6% smaller at room temperature respectively) Consequently epitaxial cobalt and nickel disilicide can be grown on silicon. If these layers are formed by ultra high vacuum (UHV) deposition (also known as molecular beam epitaxy or MBE) their thickness can be controlled to within a few monolayers. Such ultrathin metal/silicon systems have many potential applications: for example electronic devices based on ballistic transport. They also provide a model system to study the properties of heterointerfaces. In this work we will discuss results obtained using in situ and ex situ transmission electron microscopy (TEM).In situ TEM is suited to the study of MBE growth for several reasons. It offers high spatial resolution and the ability to penetrate many monolayers of material. This is in contrast to the techniques which are usually employed for in situ measurements in MBE, for example low energy electron diffraction (LEED) and reflection high energy electron diffraction (RHEED), which are both sensitive to only a few monolayers at the surface.


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