Welded silver nanowire networks as high-performance transparent conductive electrodes: Welding techniques and device applications

2020 ◽  
Vol 20 ◽  
pp. 100634 ◽  
Author(s):  
Yanan Ding ◽  
Youchao Cui ◽  
Xuhai Liu ◽  
Guoxia Liu ◽  
Fukai Shan
Keyword(s):  
High Performance ◽  
Silver Nanowire ◽  
Device Applications ◽  
Nanowire Networks ◽  
Transparent Conductive Electrodes

Order-enhanced silver nanowire networks fabricated by two-step dip-coating as polymer solar cell electrodes

RSC Advances ◽  
2015 ◽  
Vol 5 (122) ◽  
pp. 100725-100729 ◽  
Author(s):  
Danfeng Pu ◽  
Weixin Zhou ◽  
Yi Li ◽  
Jun Chen ◽  
Jianyu Chen ◽  
...  
Keyword(s):  
Solar Cell ◽  
Electrical Properties ◽  
Polymer Solar Cell ◽  
Dip Coating ◽  
Silver Nanowire ◽  
Optical And Electrical Properties ◽  
Efficient Utilization ◽  
Layer Stacking ◽  
Nanowire Networks ◽  
Transparent Conductive Electrodes

The efficient utilization of Ag NW by avoiding their aggregation and multi-layer stacking in their networks can improve the optical and electrical properties of the derived transparent conductive electrodes (TCEs).

scholarly journals Figures of Merit for High-Performance Transparent Electrodes Using Dip-Coated Silver Nanowire Networks

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Sergio B. Sepulveda-Mora ◽  
Sylvain G. Cloutier
Keyword(s):  
Sheet Resistance ◽  
High Performance ◽  
Silver Nanowires ◽  
Optical Transmittance ◽  
Dip Coating ◽  
Silver Nanowire ◽  
Figures Of Merit ◽  
The One ◽  
Nanowire Networks ◽  
Dip Coating Technique

Homogeneous, highly conductive, and transparent silver nanowire thin films were fabricated using a simple dip-coating technique and a subsequent annealing step. Silver nanowires with two different average lengths (11 μm and 19 μm) were used in the sample preparation to analyze the dependence of the sheet resistance on the length of the one-dimensional nanostructures. The best sample had a sheet resistance of 10.2 Ω/□with optical transmittance of 89.9%. Two figures of merit, the electrical to optical conductivity ratio(σDC/σOP)andϕTC, were obtained for all the samples in order to measure their performance as transparent conductive materials.

Annealing-free and strongly adhesive silver nanowire networks with long-term reliability by introduction of a nonconductive and biocompatible polymer binder

Nanoscale ◽  
2014 ◽  
Vol 6 (9) ◽  
pp. 4812-4818 ◽  
Author(s):  
Yunxia Jin ◽  
Dunying Deng ◽  
Yuanrong Cheng ◽  
Lingqiang Kong ◽  
Fei Xiao
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Alginic Acid ◽  
Spray Coating ◽  
Polymer Binder ◽  
Silver Nanowire ◽  
Biocompatible Polymer ◽  
One Step ◽  
Nanowire Networks

A high-performance AgNW composite film was fabricated using a complex of alginic acid and poly(dopamine) as a binder via a simple and fast one-step spray coating technique at room temperature.

High-Throughput Fabrication of Silver Nanowire Networks That are Highly Stable under Current Flow by In Situ Interconnection with Single-Walled Carbon Nanotubes

2015 ◽  
Vol 1786 ◽  
pp. 7-11 ◽  
Author(s):  
Joong Tark Han ◽  
Jong Seok Woo ◽  
Sunshin Jung ◽  
Hee Jin Jeong ◽  
Seung Yol Jeong ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
High Performance ◽  
Single Walled Carbon Nanotubes ◽  
Silver Nanowire ◽  
Junction Resistance ◽  
Single Walled Carbon ◽  
Conducting Networks ◽  
Nanowire Networks ◽  
Walled Carbon Nanotubes

ABSTRACTThe junction resistance control of conducting networks is a crucial factor for high performance of the network-structured conducting film. Here, we show that silver nanowire (AgNW) networks can be stabilized by using single-walled carbon nanotubes (SWCNTs) which were functionalized with 2-ureido-4[1H]pyrimidinone (UHP) moieties. UHP-modified SWCNTs allowed us to fabricate AgNW suspension containing SWCNTs without adding additional dispersant molecules. The stabilization of AgNW networks was achieved by minimizing the joule heating at the NW-NW junction assisted by in-situ interconnection with the work function modulated SWCNTs. We propose that the electrical transportation pathway was modulated by the SWCNTs through the SWCNT-AgNW junctions, which results in a relatively lower junction resistance than the NW-NW junction in the network film.

scholarly journals Nanonet: Low-temperature-processed tellurium nanowire network for scalable p-type field-effect transistors and a highly sensitive phototransistor array

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Muhammad Naqi ◽  
Kyung Hwan Choi ◽  
Hocheon Yoo ◽  
Sudong Chae ◽  
Bum Jun Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Optical Measurements ◽  
Electrical Performance ◽  
Large Area ◽  
Nanowire Network ◽  
P Type ◽  
Nanowire Networks

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.

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