Study of inactive layer uniformity and charge collection efficiency of a p-type point-contact germanium detector

2017 ◽  
Vol 127 ◽  
pp. 130-136 ◽  
Author(s):  
J.L. Ma ◽  
Q. Yue ◽  
Q. Wang ◽  
J. Li ◽  
H.T. Wong ◽  
...  
Keyword(s):  
Collection Efficiency ◽  
Point Contact ◽  
Germanium Detector ◽  
Charge Collection ◽  
Charge Collection Efficiency ◽  
P Type

Degradation of Charge Collection Efficiency for 6H-SiC Diodes by Electron Irradiation

2008 ◽  
Vol 600-603 ◽  
pp. 1043-1046 ◽  
Author(s):  
Naoya Iwamoto ◽  
Shinobu Onoda ◽  
Shigeomi Hishiki ◽  
Takeshi Ohshima ◽  
Makoto Murakami ◽  
...  
Keyword(s):  
Epitaxial Layer ◽  
Electron Irradiation ◽  
Collection Efficiency ◽  
Ion Beam ◽  
Charge Collection ◽  
Radiation Tolerance ◽  
Induced Current ◽  
Charge Collection Efficiency ◽  
Significant Change ◽  
P Type

6H-SiC n+p diodes fabricated on a p-type epitaxial layer were irradiated with 1MeV-electrons at fluences up to 6×1016 cm-2 to clarify their radiation tolerance. Charge Collection Efficiencies (CCEs) were evaluated from the Transient Ion Beam Induced Current (TIBIC) using Oxygen (O) ions. The CCE of 93 % was obtained for non-electron-irradiated diodes, and no significant change in CCE was observed for diodes irradiated with electrons at fluences below 1×1015 cm-2. The degradation of CCE was observed after irradiation at fluences above 5×1015 cm-2.

3D imaging of radiation damage in silicon sensor and spatial mapping of charge collection efficiency

2013 ◽  
Vol 8 (03) ◽  
pp. C03023-C03023 ◽  
Author(s):  
M Jakubek ◽  
J Jakubek ◽  
J Zemlicka ◽  
M Platkevic ◽  
V Havranek ◽  
...  
Keyword(s):  
Radiation Damage ◽  
3D Imaging ◽  
Collection Efficiency ◽  
Charge Collection ◽  
Spatial Mapping ◽  
Charge Collection Efficiency ◽  
Silicon Sensor
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