Signal and charge collection efficiency of a p-type STC 3D-detector irradiated to sLHC-fluences, read out with 40MHz

Author(s):  
S. Eckert ◽  
T. Ehrich ◽  
K. Jakobs ◽  
S. Kühn ◽  
U. Parzefall ◽  
...  
2008 ◽  
Vol 600-603 ◽  
pp. 1043-1046 ◽  
Author(s):  
Naoya Iwamoto ◽  
Shinobu Onoda ◽  
Shigeomi Hishiki ◽  
Takeshi Ohshima ◽  
Makoto Murakami ◽  
...  

6H-SiC n+p diodes fabricated on a p-type epitaxial layer were irradiated with 1MeV-electrons at fluences up to 6×1016 cm-2 to clarify their radiation tolerance. Charge Collection Efficiencies (CCEs) were evaluated from the Transient Ion Beam Induced Current (TIBIC) using Oxygen (O) ions. The CCE of 93 % was obtained for non-electron-irradiated diodes, and no significant change in CCE was observed for diodes irradiated with electrons at fluences below 1×1015 cm-2. The degradation of CCE was observed after irradiation at fluences above 5×1015 cm-2.


2013 ◽  
Vol 8 (03) ◽  
pp. C03023-C03023 ◽  
Author(s):  
M Jakubek ◽  
J Jakubek ◽  
J Zemlicka ◽  
M Platkevic ◽  
V Havranek ◽  
...  

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