Degradation of Charge Collection Efficiency for 6H-SiC Diodes by Electron Irradiation

2008 ◽  
Vol 600-603 ◽  
pp. 1043-1046 ◽  
Author(s):  
Naoya Iwamoto ◽  
Shinobu Onoda ◽  
Shigeomi Hishiki ◽  
Takeshi Ohshima ◽  
Makoto Murakami ◽  
...  
Keyword(s):  
Epitaxial Layer ◽  
Electron Irradiation ◽  
Collection Efficiency ◽  
Ion Beam ◽  
Charge Collection ◽  
Radiation Tolerance ◽  
Induced Current ◽  
Charge Collection Efficiency ◽  
Significant Change ◽  
P Type

6H-SiC n+p diodes fabricated on a p-type epitaxial layer were irradiated with 1MeV-electrons at fluences up to 6×1016 cm-2 to clarify their radiation tolerance. Charge Collection Efficiencies (CCEs) were evaluated from the Transient Ion Beam Induced Current (TIBIC) using Oxygen (O) ions. The CCE of 93 % was obtained for non-electron-irradiated diodes, and no significant change in CCE was observed for diodes irradiated with electrons at fluences below 1×1015 cm-2. The degradation of CCE was observed after irradiation at fluences above 5×1015 cm-2.

Degradation of Charge Collection Efficiency Obtained for 6H-SiC n+p Diodes Irradiated with Gold Ions

2007 ◽  
Vol 556-557 ◽  
pp. 913-916 ◽  
Author(s):  
Takeshi Ohshima ◽  
Takahiro Satoh ◽  
Masakazu Oikawa ◽  
Shinobu Onoda ◽  
Shigeomi Hishiki ◽  
...  
Keyword(s):  
Reverse Bias ◽  
Ion Irradiation ◽  
Collection Efficiency ◽  
Ion Beam ◽  
Transient Current ◽  
Charge Collection ◽  
Induced Current ◽  
Charge Collection Efficiency ◽  
Signal Peak ◽  
The Ideal

The charge generated in 6H-SiC n+p diodes by gold (Au) ion irradiation at an energy of 12 MeV was evaluated using the Transient Ion Beam Induced Current (TIBIC). The signal peak of the transient current increases, and the fall-time decreases with increasing applied reverse bias. The value of collected charge experimentally obtained is smaller than the ideal value. The Charge Collection Efficiency (CCE) of 6H-SiC n+p diodes irradiated with Au ions is approximately 50 % in spite that the CCE of 100 % is obtained in the case of oxygen (O) ion irradiation.

Charge Collection Efficiency of 6H-SiC P+N Diodes Degraded by Low-Energy Electron Irradiation

2010 ◽  
Vol 645-648 ◽  
pp. 921-924 ◽  
Author(s):  
Naoya Iwamoto ◽  
Shinobu Onoda ◽  
Takeshi Ohshima ◽  
Kazutoshi Kojima ◽  
Atsushi Koizumi ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Collection Efficiency ◽  
Alpha Particles ◽  
Low Energy ◽  
Energy Electron ◽  
Charge Collection ◽  
Charge Collection Efficiency ◽  
Before And After ◽  
Low Energy Electron

The effect of electron irradiation on the charge collection efficiency of a 6H-SiC p+n diode has been studied. The diodes were irradiated with electrons of energies from 100 keV to 1 MeV. The charge collection efficiencies of the samples were measured for alpha particles before and after the electron irradiation. The electron irradiation at 100 keV does not affect the charge collection efficiency, while the electron irradiation at 200 keV or higher decreases the charge collection efficiency. The degree of the degradation of the diodes correlates with the energy of the electron irradiation.

He+ ion damage in 4H-SiC studied by charge collection efficiency measurements.

2003 ◽  
Vol 792 ◽  
Author(s):  
Roberta Nipoti ◽  
Cesare Donolato
Keyword(s):  
Collection Efficiency ◽  
Ion Beam ◽  
Charge Collection ◽  
Nuclear Microprobe ◽  
Ion Microprobe ◽  
Charge Collection Efficiency ◽  
Interface Recombination ◽  
Carrier Recombination ◽  
Interface Recombination Velocity ◽  
Recombination Velocity

ABSTRACTThe nuclear microprobe facility of the Italian National Laboratories of Legnaro was used for an Ion Beam Induced Charge Collection (IBIC or IBICC) experiment which measured the charge collection of a 4H-SiC Schottky diode irradiated with 2 MeV He+ at increasing doses. The experiment was arranged so as to obtain a statistics of about 1400 events per each He+ ion from the 1st to the 500th one on the ion microprobe spot (1.5 × 1.5 μm2). These figures correspond to He+ fluence values in the range 107−1011 ions/cm2. The charge collection of the diode was almost constant from the 1st to the 10th He+ ion, i.e. up to a fluence of 109 ions/cm2, and then monotonically decreased for the subsequent ions. The SiC device collection efficiency was modelled by representing the electrical effects of the damage produced by ions as a planar interface region of given carrier recombination velocity at the depth of the damage peak. Experimental and computed data scale one to the other assuming that the interface recombination velocity and He+ fluence are linearly related.

CHARACTERISTICS OF CVD DIAMOND FILMS IN DETECTING UV, X-RAY AND ALPHA PARTICLE

2002 ◽  
Vol 16 (06n07) ◽  
pp. 1018-1023 ◽  
Author(s):  
J. AHN ◽  
B. GAN ◽  
Q. ZHANG ◽  
S. F. YOON ◽  
V. LIGATCHEV ◽  
...  
Keyword(s):  
Visible Light ◽  
Alpha Particle ◽  
Uv Light ◽  
Collection Efficiency ◽  
Ion Beam ◽  
Response Speed ◽  
Cvd Diamond ◽  
Charge Collection ◽  
Charge Collection Efficiency ◽  
X Ray

The CVD diamond UV photodetector shows more than four orders of photoresponsivity discrimination between UV and visible light. Post-treatment on as-fabricated photodetector is essential for a good response to UV light and blindness to visible light. The CVD diamond X-ray detector shows linear dependence of photocurrent on X-ray intensity and high response speed. The mapping of charge collection efficiency on the whole sensing area of a CVD diamond alpha particle detector has been obtained using ion-beam-induced charge microscopy technique. Three peaks have been observed in the charge collection spectrum.

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