Sub-keV secondary ion mass spectrometry depth profiling: comparison of sample rotation and oxygen flooding

Applied Surface Science ◽

10.1016/j.apsusc.2004.03.136 ◽

2004 ◽

Vol 231-232 ◽

pp. 653-657 ◽

Author(s):

R. Liu ◽

A.T.S. Wee

Keyword(s):

Mass Spectrometry ◽

Secondary Ion Mass Spectrometry ◽

Depth Profiling ◽

Sample Rotation ◽

Ion Mass Spectrometry ◽

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Application of sample rotation to secondary ion mass spectrometry depth profiling of aluminum metallization

Surface and Interface Analysis ◽

10.1002/sia.740180215 ◽

1992 ◽

Vol 18 (2) ◽

pp. 147-152 ◽

Author(s):

F. A. Stevie ◽

J. L. Moore

Keyword(s):

Mass Spectrometry ◽

Secondary Ion Mass Spectrometry ◽

Depth Profiling ◽

Sample Rotation ◽

Ion Mass Spectrometry ◽

Aluminum Metallization ◽

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Sub-keV secondary ion mass spectrometry depth profiling: comparison of sample rotation and oxygen flooding

Applied Surface Science ◽

10.1016/s0169-4332(04)00375-7 ◽

2004 ◽

Author(s):

R LIU

Keyword(s):

Mass Spectrometry ◽

Secondary Ion Mass Spectrometry ◽

Depth Profiling ◽

Sample Rotation ◽

Ion Mass Spectrometry ◽

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High resolution secondary ion mass spectrometry depth profiling using continuous sample rotation and its application to superlattice and delta‐doped sample analysis

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.576447 ◽

1990 ◽

Vol 8 (6) ◽

pp. 4101-4103 ◽

Author(s):

Eun‐Hee Cirlin ◽

John J. Vajo ◽

Thomas C. Hasenberg ◽

Robert J. Hauenstein

Keyword(s):

Mass Spectrometry ◽

High Resolution ◽

Secondary Ion Mass Spectrometry ◽

Depth Profiling ◽

Sample Analysis ◽

Sample Rotation ◽

Ion Mass Spectrometry ◽

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Sample rotation during depth profiling with secondary ion mass spectrometry

Surface and Interface Analysis ◽

10.1002/sia.740171107 ◽

1991 ◽

Vol 17 (11) ◽

pp. 786-792 ◽

Author(s):

John J. Vajo ◽

Eun-Hee Cirlin

Keyword(s):

Mass Spectrometry ◽

Secondary Ion Mass Spectrometry ◽

Depth Profiling ◽

Sample Rotation ◽

Ion Mass Spectrometry ◽

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Auger electron spectroscopy and secondary ion mass spectrometry depth profiling with sample rotation

Thin Solid Films ◽

10.1016/0040-6090(92)90572-s ◽

1992 ◽

Vol 220 (1-2) ◽

pp. 197-203 ◽

Author(s):

Eun-Hee Cirlin

Keyword(s):

Mass Spectrometry ◽

Auger Electron Spectroscopy ◽

Electron Spectroscopy ◽

Auger Electron ◽

Secondary Ion Mass Spectrometry ◽

Depth Profiling ◽

Sample Rotation ◽

Ion Mass Spectrometry ◽

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Ultra shallow secondary ion mass spectrometry depth profiling: Limitation of sample rotation in improving depth resolution

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/s0168-583x(01)00633-4 ◽

2001 ◽

Vol 179 (4) ◽

pp. 557-560 ◽

Author(s):

C.M Ng ◽

A.T.S Wee ◽

C.H.A Huan ◽

A See

Keyword(s):

Mass Spectrometry ◽

Secondary Ion Mass Spectrometry ◽

Depth Profiling ◽

Depth Resolution ◽

Sample Rotation ◽

Ion Mass Spectrometry ◽

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Ion‐induced topography, depth resolution, and ion yield during secondary ion mass spectrometry depth profiling of a GaAs/AlGaAs superlattice: Effects of sample rotation

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.577634 ◽

1991 ◽

Vol 9 (3) ◽

pp. 1395-1401 ◽

Author(s):

Eun‐Hee Cirlin ◽

John J. Vajo ◽

Robert E. Doty ◽

T. C. Hasenberg

Keyword(s):

Mass Spectrometry ◽

Secondary Ion Mass Spectrometry ◽

Depth Profiling ◽

Depth Resolution ◽

Sample Rotation ◽

Ion Mass Spectrometry ◽

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Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of arsenic in silicon

10.3403/30199170u ◽

2015 ◽

Keyword(s):

Mass Spectrometry ◽

Chemical Analysis ◽

Secondary Ion Mass Spectrometry ◽

Depth Profiling ◽

Surface Chemical ◽

Spectrometry Method ◽

Mass Spectrometry Method ◽

Ion Mass Spectrometry ◽

Secondary Ion ◽

Surface Chemical Analysis

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Are cluster ion analysis beams good choices for hydrogen depth profiling using time-of-flight secondary ion mass spectrometry?

Surface and Interface Analysis ◽

10.1002/sia.3776 ◽

2011 ◽

Vol 44 (1) ◽

pp. 89-93 ◽

Author(s):

Zihua Zhu ◽

Vaithiyalingam Shutthanandan

Keyword(s):

Mass Spectrometry ◽

Secondary Ion Mass Spectrometry ◽

Time Of Flight ◽

Depth Profiling ◽

Ion Mass Spectrometry ◽

Cluster Ion ◽

Secondary Ion ◽

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Secondary ion mass spectrometry depth profiling of ultrashallow phosphorous in silicon

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.591222 ◽

2000 ◽

Vol 18 (1) ◽

pp. 509 ◽

Author(s):

R. Loesing ◽

G. M. Guryanov ◽

J. L. Hunter ◽

D. P. Griffis

Keyword(s):

Mass Spectrometry ◽

Secondary Ion Mass Spectrometry ◽

Depth Profiling ◽

Ion Mass Spectrometry ◽

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