Kinetic roughening during gas-source molecular-beam epitaxy of gallium nitride

2004 ◽  
Vol 234 (1-4) ◽  
pp. 445-450 ◽  
Author(s):  
S Vézian ◽  
F Natali ◽  
F Semond ◽  
J Massies
Keyword(s):  
Gallium Nitride ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Kinetic Roughening ◽  
Gas Source

Analysis of gallium nitride growth by gas-source molecular beam epitaxy

1998 ◽  
Vol 187 (3-4) ◽  
pp. 397-401 ◽  
Author(s):  
S.Yu Karpov ◽  
Yu.N Makarov ◽  
M.S Ramm ◽  
R.A Talalaev
Keyword(s):  
Gallium Nitride ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gas Source

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Semiconductor Quantum Well
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