Gas Source MBE (Molecular Beam Epitaxy).

1987 ◽  
Author(s):  
Gary L. Robinson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gas Source ◽  
Gas Source Mbe

Defect Studies in n-Type GaN Grown by Molecular Beam Epitaxy

1995 ◽  
Vol 378 ◽  
Author(s):  
W. Götz ◽  
D. B. Oberman ◽  
J. S. Harris
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electron Cyclotron Resonance ◽  
Deep Level ◽  
Growth Parameters ◽  
Ecr Plasma ◽  
Gas Source ◽  
Deep Donor ◽  
Hall Effect Measurements ◽  
Gas Source Mbe

AbstractGaN thin films grown by molecular beam epitaxy (MBE) were characterized by Hall effect measurements in the temperature range from 80 K to 500 K and by photoluminescence spectroscopy (PL) at 2 K and at 300 K. These films were grown by MBE utilizing either electron cyclotron resonance (ECR) plasma activated nitrogen gas or thermally cracked hydrogen azide (HN3) as the source of chemically reactive nitrogen. The electrical properties of the GaN films grown by ECR plasma assisted MBE were found to vary with growth parameters, dominated either by shallow donors with activation energies (ΔE)in the range between 10 meV and 30 meV or deep donor levels (ΔE; > 500 meV). GaN grown by (HN3) gas-source MBE exhibited metallic conduction and electron mobilities <1 cm2/Vs. However, these films displayed sharp photoluminescence lines at 3.360 eV and 3.298 eV and no deep level related luminescence, whereas only broad deep level related emission was observed in the PL spectra of the ECR plasma assisted MBE grown GaN films.

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Semiconductor Quantum Well

Optical properties of quantum wells grown upon gas source molecular‐beam epitaxy low‐temperature buffers

1991 ◽  
Vol 69 (11) ◽  
pp. 7942-7944 ◽  
Author(s):  
K. T. Shiralagi ◽  
R. A. Puechner ◽  
K. Y. Choi ◽  
R. Droopad ◽  
G. N. Maracas
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Gas Source

Optical properties of InAs/AlSb superlattices grown by gas source molecular beam epitaxy

1994 ◽  
Vol 136 (1-4) ◽  
pp. 310-314 ◽  
Author(s):  
S.G. Kim ◽  
H. Asahi ◽  
M. Seta ◽  
K. Asami ◽  
S. Gonda ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gas Source

Single-crystalline BaTiO3films grown by gas-source molecular beam epitaxy

2014 ◽  
Vol 7 (12) ◽  
pp. 125502 ◽  
Author(s):  
Yuya Matsubara ◽  
Kei S. Takahashi ◽  
Yoshinori Tokura ◽  
Masashi Kawasaki
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Crystalline ◽  
Gas Source

InGaAsBi materials grown by gas source molecular beam epitaxy

2017 ◽  
Vol 477 ◽  
pp. 135-138 ◽  
Author(s):  
Likun Ai ◽  
Shuxing Zhou ◽  
Ming Qi ◽  
Anhuai Xu ◽  
Shumin Wang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gas Source

Heavily carbon-doped p-type (In)GaAs grown by gas-source molecular beam epitaxy using diiodomethane

1995 ◽  
Vol 150 ◽  
pp. 221-226
Author(s):  
T. Tomioka ◽  
N. Okamoto ◽  
H. Ando ◽  
S. Yamaura ◽  
T. Fujii
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doped ◽  
Gas Source ◽  
P Type
Sign in / Sign up

Export Citation Format

Share Document