Well-aligned ZnO nanowires grown on Si substrate via metal–organic chemical vapor deposition

2005 ◽  
Vol 250 (1-4) ◽  
pp. 280-283 ◽  
Author(s):  
Yu-Jia Zeng ◽  
Zhi-Zhen Ye ◽  
Wei-Zhong Xu ◽  
Li-Ping Zhu ◽  
Bing-Hui Zhao
CrystEngComm ◽  
2020 ◽  
Vol 22 (7) ◽  
pp. 1160-1165 ◽  
Author(s):  
Yingnan Huang ◽  
Jianxun Liu ◽  
Xiujian Sun ◽  
Xiaoning Zhan ◽  
Qian Sun ◽  
...  

We reported the successful growth of a crack-free high-quality 2 μm-thick Al0.5Ga0.5N film with a smooth surface grown on planar Si by metal–organic chemical vapor deposition.


2008 ◽  
Vol 8 (11) ◽  
pp. 3911-3913 ◽  
Author(s):  
Zhiqiang Wang ◽  
Xuedong Liu ◽  
Jiangfeng Gong ◽  
Hongbo Huang ◽  
Shulin Gu ◽  
...  

2011 ◽  
Vol 4 (11) ◽  
pp. 115501 ◽  
Author(s):  
Binh-Tinh Tran ◽  
Edward-Yi Chang ◽  
Kung-Liang Lin ◽  
Yuen-Yee Wong ◽  
Kartika Chandra Sahoo ◽  
...  

RSC Advances ◽  
2017 ◽  
Vol 7 (35) ◽  
pp. 21541-21546
Author(s):  
S. S. Yan ◽  
A. Q. Chen ◽  
Y. Y. Wu ◽  
H. Zhu ◽  
X. H. Wang ◽  
...  

Nonpolar a-axial GaN MWs were fabricated on a patterned Si substrate via metal–organic chemical vapor deposition (MOCVD) without the assistance of any catalyst.


Sign in / Sign up

Export Citation Format

Share Document