Ultraviolet photoconductive detector based on Al doped ZnO films prepared by sol–gel method

Al doped ZnO thin films（AZO films） was prepared by sol-gel method. The influence of Parameters of different processes on the crystallization properties, micro-morphology and optical properties of this kind of films were studied, using by X-ray diffractometer, filed emission stereoscan, spectral photometer, hall admeasuring apparatus. The results indicated that the crystallization properties, micro-morphology and optical properties of Al doped ZnO films were best on the condition that the sol density was 0.5mol/L, hat treatment temperature is 600 and there is a 8-layer coating.

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Effect of annealing temperature on optical properties of Er-doped ZnO films prepared by sol–gel method

Materials Science and Engineering B ◽

10.1016/j.mseb.2007.09.029 ◽

2008 ◽

Vol 148 (1-3) ◽

pp. 35-39 ◽

Cited By ~ 43

Author(s):

Fanyong Ran ◽

Lei Miao ◽

Sakae Tanemura ◽

Masaki Tanemura ◽

Yongge Cao ◽

...

Keyword(s):

Optical Properties ◽

Annealing Temperature ◽

Sol Gel ◽

Zno Films ◽

Gel Method ◽

Sol Gel Method ◽

Doped Zno ◽

Er Doped

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Morphological investigation of indium and gallium co-doped ZnO films, derived by sol-gel method

2017 40th International Spring Seminar on Electronics Technology (ISSE) ◽

10.1109/isse.2017.8000966 ◽

2017 ◽

Author(s):

Tatyana Ivanova ◽

Antoaneta Harizanova ◽

Tatyana Koutzarova ◽

Benedicte Vertruyen

Keyword(s):

Sol Gel ◽

Zno Films ◽

Morphological Investigation ◽

Gel Method ◽

Sol Gel Method ◽

Doped Zno ◽

Co Doped

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Microstructure, optical and electrical properties of gallium-doped ZnO films prepared by sol–gel method

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2013.03.288 ◽

2013 ◽

Vol 572 ◽

pp. 175-179 ◽

Cited By ~ 23

Author(s):

Qian Li ◽

Xifeng Li ◽

Jianhua Zhang

Keyword(s):

Electrical Properties ◽

Sol Gel ◽

Zno Films ◽

Optical And Electrical Properties ◽

Gel Method ◽

Sol Gel Method ◽

Doped Zno

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Luminescence Properties of Cobalt-Doped ZnO Films Prepared by Sol–Gel Method

Journal of Electronic Materials ◽

10.1007/s11664-013-2719-4 ◽

2013 ◽

Vol 42 (12) ◽

pp. 3438-3444 ◽

Cited By ~ 14

Author(s):

Jianping Xu ◽

Shaobo Shi ◽

Lan Li ◽

Xiaosong Zhang ◽

Youwei Wang ◽

...

Keyword(s):

Sol Gel ◽

Luminescence Properties ◽

Zno Films ◽

Gel Method ◽

Sol Gel Method ◽

Doped Zno

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Effect of Ruthenium Concentration on Structural and I-V Characteristics of ZnO Thin Films by Sol–Gel Method

Journal of Molecular and Engineering Materials ◽

10.1142/s2251237317500046 ◽

2017 ◽

Vol 05 (01) ◽

pp. 1750004

Author(s):

R. Vettumperumal ◽

S. Kalyanaraman ◽

R. Thangavel

Keyword(s):

Thin Films ◽

Sol Gel ◽

Zno Thin Films ◽

Zno Films ◽

X Ray Diffraction ◽

Axis Orientation ◽

Gel Method ◽

X Ray ◽

Sol Gel Method ◽

Doped Zno

Nanocrystalline ruthenium (Ru)-doped ZnO thin films on sapphire substrate was prepared using sol–gel method by spin coating technique. The structural and I-V characteristics of Ru doped ZnO thin films were studied from the X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM) analysis and Raman spectroscopy. X-ray diffraction (XRD) results revealed that the deposited films belonged to hexagonal wurtzite structure with c-axis orientation. It is also confirmed from the Raman spectra. Enhancement of longitudinal optical (LO) phonon is observed by the strong electron–phonon interaction. An observed increment in sheet resistance with increase in dopant percentage of Ru (1–2[Formula: see text]mol%) in ZnO films was found and better I-V characteristic behavior was observed at 1[Formula: see text]mol% of Ru-doped ZnO thin films. Trap limited current flow inside the material was calculated from the log I versus log V plot in the higher voltage region.

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