Effect of H+ ion implantation on structural, morphological, optical and dielectric properties of l-arginine monohydrochloride monohydrate single crystals

2011 ◽  
Vol 257 (17) ◽  
pp. 7573-7578 ◽  
Author(s):  
K. Sangeetha ◽  
R. Ramesh Babu ◽  
P. Kumar ◽  
G. Bhagvannarayana ◽  
K. Ramamurthi
Keyword(s):  
Dielectric Properties ◽  
Ion Implantation ◽  
Single Crystals

Impurity ion implantation into silicon single crystals: efficiency and radiation damage

1995 ◽  
Vol 165 (3) ◽  
pp. 347-358 ◽  
Author(s):  
V.S. Vavilov ◽  
Aleksei R. Chelyadinskii
Keyword(s):  
Ion Implantation ◽  
Radiation Damage ◽  
Single Crystals ◽  
Impurity Ion

A New Hafnium-Beryllium System Prioduced by Ion Implantation and Annealing Techniques

1983 ◽  
Vol 27 ◽  
Author(s):  
J.C. Soares ◽  
A.A. Melo ◽  
M.F. DA Silva ◽  
E.J. Alves ◽  
K. Freitag ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystals ◽  
Room Temperature ◽  
Low Dose ◽  
Correlation Method ◽  
High Dose ◽  
Tetrahedral Sites ◽  
Time Differential ◽  
Before And After ◽  
Beryllium Foil

ABSTRACTLow and high dose hafnium imolanted beryllium samoles have been prepared at room temperature by ion implantation of beryllium commercial foils and single crystals. These samples have been studied before and after annealing with the time differential perturbed angular correlation method (TDPAC) and with Rutherford backscattering and channeling techniques. A new metastable system has been discovered in TDPAC-measurements in a low dose hafnium implanted beryllium foil annealed at 500°C. Channeling measurements show that the hafnium atoms after annealing, are in the regular tetrahedral sites but dislocated from the previous position occupied after implantation. The formation of this system is connected with the redistribution of oxygen in a thin layer under the surface. This effect does not take place precisely at the same temperature in foils and in single crystals.

Dielectric properties of quenched and laser-excited or field-treated LiF single crystals irradiated with X-rays

1994 ◽  
Vol 29 (15) ◽  
pp. 4061-4064 ◽  
Author(s):  
P. Selvarajan ◽  
B. N. Das ◽  
H. B. Gon ◽  
K. V. Rao
Keyword(s):  
Dielectric Properties ◽  
Single Crystals ◽  
X Rays

Nucleation kinetics, Williamson-Hall analysis, hardness and dielectric properties of pyridine-2-carboxylictrichloroacetate single crystals

2022 ◽  
Vol 624 ◽  
pp. 413397
Author(s):  
N. Manopradha ◽  
S. Gowri ◽  
S. Rama ◽  
K. Selvaraju ◽  
K. Kirubavathi
Keyword(s):  
Dielectric Properties ◽  
Single Crystals ◽  
Nucleation Kinetics

Crystallographic, optical and dielectric properties of gel grown praseodymium malonate single crystals

RSC Advances ◽  
2015 ◽  
Vol 5 (114) ◽  
pp. 93808-93817 ◽  
Author(s):  
Nazir Ahmad ◽  
M. M. Ahmad ◽  
P. N. Kotru
Keyword(s):  
Dielectric Properties ◽  
Single Crystals

Single crystals of praseodymium malonate hexahydrate are grown by gel encapsulation technique.

Generation of Defects and Strain by Ion Implantation in Ge (100) Single Crystals, and in Pseudomorphic GexSi1-x Films Grown on Si (100)

1992 ◽  
Vol 262 ◽  
Author(s):  
D. Y. C. Lie ◽  
A. Vantomme ◽  
F. Eisen ◽  
M. -A. Nicolet ◽  
V. Arbet-Engels ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystals ◽  
Room Temperature ◽  
Defect Concentration ◽  
Double Crystal ◽  
X Ray ◽  
Positive Strain ◽  
Independent Coefficient ◽  
The Relationship ◽  
Si Ion Implantation

ABSTRACTWe have studied the damage and strain produced in Ge (100) single crystals by implantation of various doses of 300 keV 28Si ions at room temperature. The analyzing tools were x-ray double-crystal diffractometry, and MeV 4He channeling spectrometry. The damage induced by implantation produces positive strain in Ge (100). The maximum perpendicular strain and maximum defect concentration rise nonlinearly with increasing dose. These quantities are linearly related with a dose-independent coefficient of ∼ 0.013 for Ge (100) single crystals implanted at room temperature. The results are compared with those available for Si (100) self-implantation. We have also monitored the strain and defects generated in pseudomorphic Ge0.1Si0.9/Si (100) films induced by room temperature 28Si ion implantation. It is found that the relationship between the strain and defect concentration induced by ion implantation is no longer a simple linear one.

Fabrication and evolution of nanostructure in Al2O3 single crystals by Zn+ ion implantation and thermal annealing

Vacuum ◽  
2013 ◽  
Vol 89 ◽  
pp. 132-135
Author(s):  
J.X. Xu ◽  
X.H. Xiao ◽  
F. Ren ◽  
X.D. Zhou ◽  
G.X. Cai ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystals ◽  
Thermal Annealing

Dielectric properties of Yb3+ and Nb5+ doped RbTiOPO4 single crystals

2012 ◽  
Vol 111 (3) ◽  
pp. 034106 ◽  
Author(s):  
Jna. Gavaldà ◽  
J. J. Carvajal ◽  
X. Mateos ◽  
M. Aguiló ◽  
F. Díaz
Keyword(s):  
Dielectric Properties ◽  
Single Crystals

Properties of CdSe single crystals activated with selenium by ion implantation

2009 ◽  
Vol 45 (6) ◽  
pp. 606-610 ◽  
Author(s):  
A. N. Georgobiani ◽  
B. N. Levonovich
Keyword(s):  
Ion Implantation ◽  
Single Crystals

Heavy doping of CdTe single crystals by Cr ion implantation

2018 ◽  
Vol 419 ◽  
pp. 26-31 ◽  
Author(s):  
Volodymyr D. Popovych ◽  
Roman Böttger ◽  
Rene Heller ◽  
Shengqiang Zhou ◽  
Mariusz Bester ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystals ◽  
Heavy Doping
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