Analysis of optical band-gap shift in impurity doped ZnO thin films by using nonparabolic conduction band parameters

2013 ◽  
Vol 531 ◽  
pp. 430-435 ◽  
Author(s):  
Won Mok Kim ◽  
Jin Soo Kim ◽  
Jeung-hyun Jeong ◽  
Jong-Keuk Park ◽  
Young-Jun Baik ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Conduction Band ◽  
Optical Band Gap ◽  
Zno Thin Films ◽  
Impurity Doped ◽  
Doped Zno

STRUCTURAL AND OPTICAL PROPERTIES OF UNDOPED AND SILVER, LITHIUM AND COBALT-DOPED ZnO THIN FILMS

2019 ◽  
Vol 27 (04) ◽  
pp. 1950138
Author(s):  
FATMA MEYDANERİ TEZEL ◽  
İ. AFŞIN KARİPER
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Optical Transmittance ◽  
Refraction Index ◽  
Zno Thin Films ◽  
High Temperature Furnace ◽  
Doped Zno ◽  
Ray Patterns ◽  
Temperature Furnace

Undoped and silver, lithium and cobalt-doped ZnO thin films have been successfully deposited on glass by chemical bath deposition (CBD). The reaction temperature was 50∘C and the films were annealed at 400∘C for 4[Formula: see text]h in a high temperature furnace. UV/VIS spectrum was used to determine optical transmittance, optical band gap ([Formula: see text] and absorbance values of Ag:ZnO, Co:ZnO, Li:ZnO and undoped ZnO thin films. Optical band gap ([Formula: see text] and absorbance values of undoped ZnO, Ag:ZnO, Co:ZnO and Li:ZnO thin films were found as 0.0158, 0.0064, 0.2638, 0.0956 and 3.24, 3.13, 3.27, 2.96 eV, respectively. Extinction coefficients and refraction indexes of the films were found to be 0.0096, 0.0038, 0.0068, 0.019 (extinction coefficient) and 1.26, 1.14, 1.66, 2.33 (refraction index), respectively. X-ray patterns of undoped ZnO, Ag:ZnO, Co:ZnO and Li:ZnO thin films were confirmed as amorphous.

Optical and Electronic Analysis of Pure and Fe-Doped ZnO Thin Films Using Spectroscopic Ellipsometry and Kramers–Kronig Method

2019 ◽  
Vol 18 (01) ◽  
pp. 1850013 ◽  
Author(s):  
Maryam Motallebi Aghgonbad ◽  
Hassan Sedghi
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Spectroscopic Ellipsometry ◽  
Optical Band Gap ◽  
Band Gap Energy ◽  
Zno Thin Films ◽  
Fe Doping ◽  
Gap Energy ◽  
Optical And Electronic Properties ◽  
Doped Zno

In the present work, pure and Fe-doped ZnO thin films were deposited on glass substrates by sol–gel method. Zinc acetate and iron nitrate were used as the starting material and dopant source, respectively. The concentration of Fe doping was 6[Formula: see text]at.% and 8[Formula: see text]at.%. The optical and electronic properties of pure and Fe-doped ZnO thin films such as refraction index, extinction coefficient, dielectric function and optical band gap energy of the layers were obtained by spectroscopic ellipsometry method in the wavelength range of 300–900[Formula: see text]nm. The incidence angle of the layers kept 70[Formula: see text]. Also data obtained by Kramers–Kronig relations were used for comparison. The influence of Fe-doping concentration on the optical and electronic properties of thin films was studied. The transmittance data of ZnO thin films showed that 6[Formula: see text]at.% Fe-doped ZnO thin film has the highest transmittance value. Dielectric function of pure ZnO films was found to be higher compared with Fe-doped ones. Also it can be deduced from the results that Fe doping influences the optical band gap energy of thin films.

Low temperature synthesis wide optical band gap Al and (Al, Na) co-doped ZnO thin films

2011 ◽  
Vol 257 (6) ◽  
pp. 2341-2345 ◽  
Author(s):  
Tao Wang ◽  
Yanmei Liu ◽  
Qingqing Fang ◽  
Mingzai Wu ◽  
Xia Sun ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Band Gap ◽  
Optical Band Gap ◽  
Zno Thin Films ◽  
Low Temperature Synthesis ◽  
Temperature Synthesis ◽  
Doped Zno ◽  
Co Doped

Blueshift of optical band gap in c-axis oriented and conducting Al-doped ZnO thin films

2009 ◽  
Vol 105 (11) ◽  
pp. 113109 ◽  
Author(s):  
A. Di Trolio ◽  
E. M. Bauer ◽  
G. Scavia ◽  
C. Veroli
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Zno Thin Films ◽  
Doped Zno
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