Growth of high quality Zn0.9Mg0.1O films on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy

2013 ◽  
Vol 279 ◽  
pp. 212-215 ◽  
Author(s):  
H.H. Zhang ◽  
X.H. Pan ◽  
P. Ding ◽  
J.Y. Huang ◽  
H.P. He ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Quality ◽  
Sapphire Substrates

Epitaxial growth and characterization of high-quality aluminum films on sapphire substrates by molecular beam epitaxy

CrystEngComm ◽  
2014 ◽  
Vol 16 (33) ◽  
pp. 7626-7632 ◽  
Author(s):  
Wenliang Wang ◽  
Weijia Yang ◽  
Zuolian Liu ◽  
Yunhao Lin ◽  
Shizhong Zhou ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Epitaxial Films ◽  
High Quality ◽  
Aluminum Films ◽  
Sapphire Substrates

2 inch high-quality Al epitaxial films with sharp and abrupt Al/Al2O3 interfaces have been grown on sapphire substrates by molecular beam epitaxy with an in-plane alignment of Al[11̄0]/Al2O3[11̄00].

Excitons bound to structural defects in GaN

2001 ◽  
Vol 693 ◽  
Author(s):  
M. A. Reshchikov ◽  
D. Huang ◽  
F. Yun ◽  
H. Morkoç ◽  
R. J. Molnar ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Structural Defects ◽  
Excitation Density ◽  
High Quality ◽  
Pl Spectra ◽  
Sapphire Substrates ◽  
Uv Illumination ◽  
Increasing Temperature

AbstractWe analyzed the photoluminescence (PL) spectra of undoped GaN films grown by molecular beam epitaxy on sapphire substrates. While the PL spectra from high-quality samples contain free and bound exciton peaks only, the spectra from some samples involve sharp unidentified peaks in the energy range of 3.0 – 3.45 eV, specifically at 3.21, 3.32, 3.36, and 3.42 eV. We attribute these peaks to excitons bound to defects because of the linear and sometimes superlinear increase in their intensity with excitation density without saturation up to 100 W/cm2. With increasing temperature these peaks quench in a well-known fashion similar to that for excitons. In order to relate the observed peaks to the structural defects, we etched selected samples in hot H3PO4 acid or, alternatively, with photo-electrochemical (PEC) etching at room temperature in the presence of UV-illumination in a dilute KOH solution. In the former case the dislocations were etched leaving etched pits on the surface, while in the latter case the dislocations remained unetched due to a deficit of photogenerated holes at dislocation sites. We found that the 3.42 eV peak disappeared after both hot wet and PEC etching suggesting that the associated defect is at the GaN surface. Peaks at 3.21 and 3.36 eV could be enhanced greatly by PEC etching, which were correlated to bulk dislocations.

Growth of high-quality ZnO thin films on ( $11\bar{2}0$ ) a-plane sapphire substrates by plasma-assisted molecular beam epitaxy

2012 ◽  
Vol 112 (4) ◽  
pp. 1051-1055 ◽  
Author(s):  
Ping Ding ◽  
Xinhua Pan ◽  
Zhizhen Ye ◽  
Haiping He ◽  
Honghai Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Zno Thin Films ◽  
High Quality ◽  
Sapphire Substrates

High-Quality GaN Layers on c-Plane Sapphire Substrates by Plasma-Assisted Molecular-Beam Epitaxy Using Double-Step AlN Buffer Process

2002 ◽  
Vol 41 (Part 1, No. 7A) ◽  
pp. 4454-4457 ◽  
Author(s):  
Kulandaivel Jeganathan ◽  
Xu-Qiang Shen ◽  
Toshihide Ide ◽  
Mitsuaki Shimizu ◽  
Hajime Okumura
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Quality ◽  
Double Step ◽  
Sapphire Substrates ◽  
Aln Buffer

High-quality epitaxial CoFe/Si(111) heterostructures fabricated by low-temperature molecular beam epitaxy

2010 ◽  
Vol 97 (19) ◽  
pp. 192501 ◽  
Author(s):  
Y. Maeda ◽  
K. Hamaya ◽  
S. Yamada ◽  
Y. Ando ◽  
K. Yamane ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
High Quality

scholarly journals Tuning the transport and magnetism in a Cr–Bi2Se3topological insulator by Sb doping

RSC Advances ◽  
2017 ◽  
Vol 7 (75) ◽  
pp. 47789-47795 ◽  
Author(s):  
Y. Tung ◽  
C. W. Chong ◽  
C. W. Liao ◽  
C. H. Chang ◽  
S. Y. Huang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Quality ◽  
Sb Doping

High-quality crystalline (Cr,Sb)-doped Bi2Se3(Cr-BSS) films were synthesized using molecular beam epitaxy (MBE).

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