Epitaxial growth and characterization of high-quality aluminum films on sapphire substrates by molecular beam epitaxy

CrystEngComm ◽  
2014 ◽  
Vol 16 (33) ◽  
pp. 7626-7632 ◽  
Author(s):  
Wenliang Wang ◽  
Weijia Yang ◽  
Zuolian Liu ◽  
Yunhao Lin ◽  
Shizhong Zhou ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Epitaxial Films ◽  
High Quality ◽  
Aluminum Films ◽  
Sapphire Substrates

2 inch high-quality Al epitaxial films with sharp and abrupt Al/Al2O3 interfaces have been grown on sapphire substrates by molecular beam epitaxy with an in-plane alignment of Al[11̄0]/Al2O3[11̄00].

Growth and characterization of In2Se3 epitaxial films by molecular beam epitaxy

1997 ◽  
Vol 175-176 ◽  
pp. 1045-1050 ◽  
Author(s):  
Tamotsu Okamoto ◽  
Akira Yamada ◽  
Makoto Konagai
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Films

Epitaxial Growth and Characterization of the Ordered Vacancy Compound CuIn3Se5 on GaAs (100) Fabricated by Molecular Beam Epitaxy

1994 ◽  
Vol 340 ◽  
Author(s):  
Art J. Nelson ◽  
M. Bode ◽  
G. Horner ◽  
K. Sinha ◽  
John Moreland
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Structural Defects ◽  
X Ray Diffraction ◽  
Symmetric Vibration ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

ABSTRACTEpitaxial growth of the ordered vacancy compound (OVC) CuIn3Se5 has been achieved on GaAs (100) by molecular beam epitaxy (MBE) from Cu2Se and In2Se3 sources. Electron probe microanalysis and X-ray diffraction have confirmed the composition for the 1-3-5 OVC phase and that the film is single crystal Culn3Se5 (100). Transmission electron microscopy (TEM) characterization of the material also showed it to be single crystalline. Structural defects in the layer consisted mainly of stacking faults. Photoluminescence (PL) measurements performed at 7.5 K indicate that the bandgap is 1.28 eV. Raman spectra reveal a strong polarized peak at 152 cm−1, which is believed to arise from the totally symmetric vibration of the Se atoms in the lattice. Atomic force microscopy reveals faceting in a preferred (100) orientation.

Growth and characterization of Ga-doped ZnO layers on a-plane sapphire substrates grown by molecular beam epitaxy

2002 ◽  
Vol 237-239 ◽  
pp. 538-543 ◽  
Author(s):  
Hiroyuki Kato ◽  
Michihiro Sano ◽  
Kazuhiro Miyamoto ◽  
Takafumi Yao
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Sapphire Substrates ◽  
Doped Zno

Controlled Growth and Characterization of Non-tapered InN Nanowires on Si(111) Substrates by Molecular Beam Epitaxy

2009 ◽  
Vol 1178 ◽  
Author(s):  
Yi-Lu Chang ◽  
Arya Fatehi ◽  
Feng Li ◽  
Zetian Mi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Room Temperature ◽  
Molecular Beam ◽  
Stacking Faults ◽  
Seeding Layer ◽  
Mbe Growth ◽  
Molecular Beam Epitaxial

AbstractWe have performed a detailed investigation of the molecular beam epitaxial (MBE) growth and characterization of InN nanowires spontaneously formed on Si(111) substrates under nitrogen rich conditions. Controlled epitaxial growth of InN nanowires (NWs) has been demonstrated by using an in situ deposited thin (˜ 0.5 nm) In seeding layer prior to the initiation of growth. By applying this technique, we have achieved non-tapered epitaxial InN NWs that are relatively free of dislocations and stacking faults. Such InN NW ensembles display strong photoluminescence (PL) at room temperature and considerably reduced spectral broadening, with very narrow spectral linewidths of 22 and 40 meV at 77 K and 300 K, respectively.

scholarly journals Growth and characterization of InP-based 1750 nm emitting membrane external-cavity surface-emitting laser

2020 ◽  
Vol 126 (12) ◽  
Author(s):  
Artur Broda ◽  
Bartosz Jeżewski ◽  
Iwona Sankowska ◽  
Michał Szymański ◽  
Paweł Hoser ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Epitaxial Growth ◽  
Spectral Range ◽  
Molecular Beam ◽  
External Cavity ◽  
Cavity Surface ◽  
Emission Properties ◽  
Surface Emitting Laser

AbstractThe epitaxial growth and emission properties of a membrane external-cavity surface-emitting laser (MECSEL) are demonstrated in the 1750 nm band. A heterostructure consisting of InGaAs quantum wells enclosed by InGaAlAs barriers was deposited on InP by molecular beam epitaxy. The emitted power exceeded 1.5 W, which is the highest that has been reported in this spectral range to date.

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