Matrix shaped pulsed laser deposition: New approach to large area and homogeneous deposition

Advanced Pulsed Laser Deposition (PLD) processes allow the growth of oxide thin film heterostructures on large area substrates up to 4-inch diameter, with flexible and controlled doping, low dislocation density, and abrupt interfaces. These PLD processes are discussed and their capabilities demonstrated using selected results of structural, electrical, and optical characterization of superconducting (YBa2Cu3O7−δ), semiconducting (ZnO-based), and ferroelectric (BaTiO3-based) and dielectric (wide-gap oxide) thin films and multilayers. Regarding the homogeneity on large area of structure and electrical properties, flexibility of doping, and state-of-the-art electronic and optical performance, the comparably simple PLD processes are now advantageous or at least fully competitive to Metal Organic Chemical Vapor Deposition or Molecular Beam Epitaxy. In particular, the high flexibility connected with high film quality makes PLD a more and more widespread growth technique in oxide research.

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Epitaxial Bi-layered perovskite ferroelectric thin film heterostructures by large area pulsed laser deposition

Ferroelectrics ◽

10.1080/00150199908009128 ◽

1999 ◽

Vol 225 (1) ◽

pp. 201-220 ◽

Cited By ~ 6

Author(s):

A. Pignolet ◽

M. Alexe ◽

K. M. Satyalakshmi ◽

St. Senz ◽

D. Hesse ◽

...

Keyword(s):

Thin Film ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Ferroelectric Thin Film ◽

Laser Deposition ◽

Layered Perovskite ◽

Large Area

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Large-area production of yttria-stabilized zirconia by pulsed laser deposition

Journal of Physics Conference Series ◽

10.1088/1742-6596/59/1/030 ◽

2007 ◽

Vol 59 ◽

pp. 140-143 ◽

Cited By ~ 3

Author(s):

N Pryds ◽

J Schou ◽

S Linderoth

Keyword(s):

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Yttria Stabilized Zirconia ◽

Laser Deposition ◽

Stabilized Zirconia ◽

Large Area

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P-Type II-VI Compound Semiconductor Thin Films Grown by Pulsed Laser Deposition

MRS Proceedings ◽

10.1557/proc-388-91 ◽

1995 ◽

Vol 388 ◽

Author(s):

W. P. Shen ◽

H. S. Kwok

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Type Ii ◽

New Approach ◽

Li Doping ◽

Semiconductor Thin Films ◽

In Doping ◽

P Type

AbstractIn this paper the results on p-type ZnS, ZnSe, CdS and CdSe thin films grown by pulsed laser deposition will be discussed. these films were deposited on GaAs substrates. Li-doping has been shown to be effective in producing p-type II-VI thin films, while in-doping is excellent for n-type CdS and CdSe thin films. No post-annealing process was used. these preliminary results suggest a possible new approach through pulsed laser deposition to solve the doping problem of II-VI compound semiconductors.

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Pulsed laser deposition of single-layer MoS2 on Au(111): from nanosized crystals to large-area films

Nanoscale Advances ◽

10.1039/c8na00126j ◽

2019 ◽

Vol 1 (2) ◽

pp. 643-655 ◽

Cited By ~ 11

Author(s):

Francesco Tumino ◽

Carlo S. Casari ◽

Matteo Passoni ◽

Valeria Russo ◽

Andrea Li Bassi

Keyword(s):

Pulsed Laser Deposition ◽

2D Materials ◽

Optoelectronic Devices ◽

Pulsed Laser ◽

Single Layer ◽

Laser Deposition ◽

Large Area ◽

Molybdenum Disulphide ◽

High Quality ◽

Nanosized Crystals

Molybdenum disulphide (MoS2) is a promising material for heterogeneous catalysis and novel 2D optoelectronic devices. In this work, single-layer MoS2 is synthesized on Au(111) by pulsed laser deposition, showing the potentialities of this technique in the synthesis of high-quality 2D materials films.

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