Structural evolution of Ti destroyable interlayer in large-size diamond film deposition by DC arc plasma jet

2016 ◽  
Vol 370 ◽  
pp. 237-242 ◽  
Author(s):  
Jianchao Guo ◽  
Chengming Li ◽  
Jinlong Liu ◽  
Junjun Wei ◽  
Liangxian Chen ◽  
...  
2001 ◽  
Vol 10 (9-10) ◽  
pp. 1551-1558 ◽  
Author(s):  
F.X. Lu ◽  
W.Z. Tang ◽  
T.B. Huang ◽  
J.M. Liu ◽  
J.H. Song ◽  
...  

2010 ◽  
Vol 654-656 ◽  
pp. 1694-1699
Author(s):  
Fan Xiu Lu ◽  
Cheng Ming Li ◽  
Yu Mei Tong ◽  
Wei Zhong Tang ◽  
Guang Chao Chen ◽  
...  

As quasi-thermodynamic equilibrium plasma, DC Arc Plasma has the advantage of very high gas temperature and thus the very high degree of activation of the precursors for diamond film deposition. The present paper reviews the progresses in the R&D of the novel high power dc arc plasma jet CVD system with rotating arc and operated at gas recycling mode for large area high quality diamond film deposition, developed at the University of Science and Technology Beijing (USTB) in the mid 1990s of the 20th century. Thanks to the continuous efforts made in the technological improvement in the past 15 years, considerable progresses have been achieved in the commercialization of this high power dc arcjet CVD system, which is now capable of mass production of large area high quality freestanding diamond films for optical, thermal, and mechanical (tool) applications. The present status in the commercialization and the property level of the resultant diamond films in optical, thermal, mechanical, dielectric, oxidation resistance, sand erosion resistance, and laser damage threshold etc. are presented. Based on the same high power dc arcjet technology, a novel high current extended dc arc plasma (HCEDCA) CVD system has been developed which successfully changed the diamond film deposition mode from 2D planar deposition in to 3D deposition (as confined by two hollow (virtue) columns). It is demonstrated to be advantageous for mass production of diamond thin film coated WC-Co cutting tools. Recent results in the R&D of thin diamond film coated WC-Co drills and end mills, and the results in field tests are discussed.


2010 ◽  
Vol 426-427 ◽  
pp. 245-248 ◽  
Author(s):  
Rong Fa Chen ◽  
Zhao Xia Shen ◽  
Liang Gang Dai ◽  
Xian Liang Zhang ◽  
Rui Zhu ◽  
...  

High quality optical grade thick diamond film wafers with different thickness are prepared by high power DC arc plasma jet CVD (DCPJ CVD) method using a CH4/Ar/H2 gas mixture. Three different powers, 13.65, 15.40 and 17.94kW, were employed during the investigation. The aim was to investigate the effect of these powers on the deposition of thick diamond film. The controlled system was discussed together. The results show that the average diamond grain size and growth rate increase with input plasma power, but a further increase in input power, diamond thick-film defects and amorphous carbon content increased.


2013 ◽  
Vol 39 ◽  
pp. 47-52 ◽  
Author(s):  
C.M. Li ◽  
R.H. Zhu ◽  
J.L. Liu ◽  
L.X. Chen ◽  
J.C. Guo ◽  
...  

2007 ◽  
Vol 16 (3) ◽  
pp. 477-480 ◽  
Author(s):  
G.C. Chen ◽  
B. Li ◽  
H. Lan ◽  
F.W. Dai ◽  
Z.Y. Zhou ◽  
...  

2011 ◽  
Vol 175 ◽  
pp. 245-248
Author(s):  
Rong Fa Chen ◽  
Liang Gang Dai ◽  
Rui Zhu ◽  
Xian Liang Zhang ◽  
Tao Liu ◽  
...  

. High quality diamond film wafers with different thickness are prepared by high power DC arc plasma jet CVD (DCPJ CVD) method using a CH4/Ar/H2 gas mixture. The effect of substrate temperature on the quality of diamond film was studied with theoretical analysis and experimental investigation. The results indicate that different structures in diamond film may grow with different substrate temperatures. The temperatures of 800°C, 900°C and 1000°C were tested in the experiments. The quality of diamond film showed the best at the temperature of 900°C. Characterization by X-ray diffraction, Raman spectroscopy and SEM analysis are also carried out.


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