Large area high quality diamond film deposition by high power DC arc plasma jet operating at gas recycling mode

2001 ◽  
Vol 10 (9-10) ◽  
pp. 1551-1558 ◽  
Author(s):  
F.X. Lu ◽  
W.Z. Tang ◽  
T.B. Huang ◽  
J.M. Liu ◽  
J.H. Song ◽  
...  
2010 ◽  
Vol 654-656 ◽  
pp. 1694-1699
Author(s):  
Fan Xiu Lu ◽  
Cheng Ming Li ◽  
Yu Mei Tong ◽  
Wei Zhong Tang ◽  
Guang Chao Chen ◽  
...  

As quasi-thermodynamic equilibrium plasma, DC Arc Plasma has the advantage of very high gas temperature and thus the very high degree of activation of the precursors for diamond film deposition. The present paper reviews the progresses in the R&D of the novel high power dc arc plasma jet CVD system with rotating arc and operated at gas recycling mode for large area high quality diamond film deposition, developed at the University of Science and Technology Beijing (USTB) in the mid 1990s of the 20th century. Thanks to the continuous efforts made in the technological improvement in the past 15 years, considerable progresses have been achieved in the commercialization of this high power dc arcjet CVD system, which is now capable of mass production of large area high quality freestanding diamond films for optical, thermal, and mechanical (tool) applications. The present status in the commercialization and the property level of the resultant diamond films in optical, thermal, mechanical, dielectric, oxidation resistance, sand erosion resistance, and laser damage threshold etc. are presented. Based on the same high power dc arcjet technology, a novel high current extended dc arc plasma (HCEDCA) CVD system has been developed which successfully changed the diamond film deposition mode from 2D planar deposition in to 3D deposition (as confined by two hollow (virtue) columns). It is demonstrated to be advantageous for mass production of diamond thin film coated WC-Co cutting tools. Recent results in the R&D of thin diamond film coated WC-Co drills and end mills, and the results in field tests are discussed.


2000 ◽  
Vol 9 (9-10) ◽  
pp. 1673-1677 ◽  
Author(s):  
H. Guo ◽  
Z.L. Sun ◽  
Q.Y. He ◽  
S.M. Du ◽  
X.B. Wu ◽  
...  

2016 ◽  
Vol 370 ◽  
pp. 237-242 ◽  
Author(s):  
Jianchao Guo ◽  
Chengming Li ◽  
Jinlong Liu ◽  
Junjun Wei ◽  
Liangxian Chen ◽  
...  

2007 ◽  
Vol 16 (3) ◽  
pp. 477-480 ◽  
Author(s):  
G.C. Chen ◽  
B. Li ◽  
H. Lan ◽  
F.W. Dai ◽  
Z.Y. Zhou ◽  
...  

2005 ◽  
Vol 475-479 ◽  
pp. 3615-3618
Author(s):  
Hui Qing Li ◽  
Cheng Ming Li ◽  
Guang Chao Chen ◽  
Fan Xiu Lu ◽  
Yu Mei Tong

Interfaces between Mo substrate and free-standing diamond films prepared by DC arc plasma jet operated at gas recycling mode were investigated, including for the first time used and multi-time used substrate. The morphology, phase composition and bonding state of elements in the interface between substrates and diamond films were examined by optical microscopy, XRD and XPS. The profiles of carbon concentration of Mo substrates were measured by GDOES. It showed that Mo2C and MoC were formed on the first time used Mo substrate, and MoC was found on diamond films nucleation side after detachment. It suggested that MoC was peeled off from Mo substrate. The stable Mo2C on Mo substrate was formed after multi-time use of Mo substrate. However, MoC has not been found on it. The thickness of carburizing layer on the first time used Mo substrate is up to 30µm, and the carburizing layer on the multi-time used substrate is much thicker than that on the first used. The amorphous carbon in the surface of the substrate and nucleation side of diamond films was found by XPS, including for the first time used and multi-time used substrate.


2010 ◽  
Vol 426-427 ◽  
pp. 245-248 ◽  
Author(s):  
Rong Fa Chen ◽  
Zhao Xia Shen ◽  
Liang Gang Dai ◽  
Xian Liang Zhang ◽  
Rui Zhu ◽  
...  

High quality optical grade thick diamond film wafers with different thickness are prepared by high power DC arc plasma jet CVD (DCPJ CVD) method using a CH4/Ar/H2 gas mixture. Three different powers, 13.65, 15.40 and 17.94kW, were employed during the investigation. The aim was to investigate the effect of these powers on the deposition of thick diamond film. The controlled system was discussed together. The results show that the average diamond grain size and growth rate increase with input plasma power, but a further increase in input power, diamond thick-film defects and amorphous carbon content increased.


2006 ◽  
Vol 15 (5) ◽  
pp. 980-984 ◽  
Author(s):  
Zhou Zu-Yuan ◽  
Chen Guang-Chao ◽  
Tang Wei-Zhong ◽  
Lü Fan-Xiu

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