Morphology of self assembled monolayers using liquid phase reaction on silica and their effect on the morphology of adsorbed insulin

2017 ◽  
Vol 405 ◽  
pp. 503-513 ◽  
Author(s):  
Indu Sharma ◽  
Sudip K. Pattanayek ◽  
Varsha Aggarwal ◽  
Subhasis Ghosh
Keyword(s):  
Liquid Phase ◽  
Self Assembled Monolayers ◽  
Phase Reaction ◽  
Assembled Monolayers ◽  
Self Assembled ◽  
Liquid Phase Reaction

Synthesis of Bismuth Titanate Thin Films by Liquid-Phase Self-Assembled Monolayers

2012 ◽  
Vol 512-515 ◽  
pp. 1175-1179
Author(s):  
Han Lin ◽  
Guo Qiang Tan ◽  
Hui Jun Ren
Keyword(s):  
Thin Films ◽  
Liquid Phase ◽  
Electrostatic Force ◽  
Substrate Surface ◽  
Precursor Solution ◽  
Molar Ratio ◽  
Self Assembled Monolayers ◽  
Complex Ions ◽  
Assembled Monolayers ◽  
Self Assembled

Using (NH4)2TiF6, Bi(NO3)3•5H2O and H3BO3 as raw materials, Bi4Ti3O12 thin films were synthesized with liquid phase self-assembled monolayers on the glass substrate. The different precursor solution concentrations and acid contents had the effects on the physical phase and morphology of Bi4Ti3O12 thin films. The Bi4Ti3O12 thin films were characterized by X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM). The results indicate that the precursor solution with 10.0 mmol/L concentration was prepared by 3:4:9 molar ratio of (NH4)2TiF6: Bi(NO3)3•5H2O: H3BO3 and 6.0 ml acid content, depositing at 50°C for 20h, and heat treating at 590°C for 2h. The as-prepared thin films are well-crystal. The surface is even and dense. The formation mechanism of the Bi4Ti3O12 thin films is as follows: [TiF6-n(OH)n]2- complex ions are formed in the (NH4)2TiF6 aqueous solution. Then H3BO3 continually consumed F- ions of the solution, which made the amounts of [TiF6-n(OH)n]2- ions increase gradually. Under the induction of the electrostatic force, Bi3+ ions and [TiF6-n(OH)n]2- ions would grow naturally on the substrate surface in the form of Bi2[TiF6-n(OH)n]3 or Bi2[TiF6-nOm/2(OH)n-m]3. The samples lost the bound water after the heat treatment and finally the Bi4Ti3O12 thin films with pure phase were obtained.

Influence of [S2O32−]/[Sm3+] on Sm2S3 thin films deposited by liquid phase deposition method on self-assembled monolayers

2012 ◽  
Vol 258 (8) ◽  
pp. 3882-3887 ◽  
Author(s):  
Hou Yan-chao ◽  
Huang Jian-feng ◽  
Zhou Xuan ◽  
Cao Li-yun ◽  
Wu Jian-peng
Keyword(s):  
Thin Films ◽  
Liquid Phase ◽  
Self Assembled Monolayers ◽  
Liquid Phase Deposition ◽  
Deposition Method ◽  
Assembled Monolayers ◽  
Self Assembled

On Preparation of SrTiO3 Thin Films with Self-Assembled Monolayers by Liquid Phase Deposition and its Dielectric Properties

2012 ◽  
Vol 512-515 ◽  
pp. 1165-1170
Author(s):  
Wei Guang Han ◽  
Guo Qiang Tan ◽  
Ao Xia ◽  
Hui Jun Ren
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Liquid Phase ◽  
Dielectric Loss ◽  
Precursor Solution ◽  
Self Assembled Monolayers ◽  
Liquid Phase Deposition ◽  
Assembled Monolayers ◽  
Self Assembled

In this paper, titanium ammonium fluoride ((NH4)TiF6), strontium nitrate (Sr(NO3)2) and boric acid (H3BO3) were used as raw materials, the precursor solution was prepared with molar ratio of AHFT/SN/BA=1/1/3. SrTiO3 dielectric thin films were deposited with the self-assembled monolayers (SAMs) by the liquid-phase deposition on FTO substrate. X-ray diffraction (XRD), scanning election microscopy (SEM) and Agilent E4980A precision LCR Meter were used to characterize the SrTiO3 films. The precursor solution concentration and the pH values of precursor solution had the effects on the dielectric properties of the as-prepared thin films. When the precursor concentration was 0.0125mol/L, the crystallization of as-prepared SrTiO3 thin films was high and the grain sizes on the film surface were even and dense. When the frequency was 15~100KHz, the optimal dielectric constant was up to 1060, the minimal dielectric loss was 4.053. As pH=3.30, the frequency of the as-prepared SrTiO3 thin films was 15~100KHz. The optimal dielectric constant was up to 1060, too. The minimal dielectric loss was 1.914. The optimal dielectric constants were 346.3 and 424.1 when the pH was 3.1 and below 3.5 respectively. The minimal dielectric losses were respectively 18.10 and 54.82.

scholarly journals The Effect of Physicochemical Properties of Perfluoroalkylsilanes Solutions on Microtribological Features of Created Self-Assembled Monolayers

Materials ◽  
2020 ◽  
Vol 13 (15) ◽  
pp. 3357
Author(s):  
Michał Cichomski ◽  
Ewelina Borkowska ◽  
Milena Prowizor ◽  
Damian Batory ◽  
Anna Jedrzejczak ◽  
...  
Keyword(s):  
Surface Tension ◽  
Liquid Phase ◽  
Silicon Content ◽  
Self Assembled Monolayers ◽  
Diamond Like Carbon ◽  
Liquid Phase Deposition ◽  
Load Range ◽  
Dlc Coatings ◽  
Assembled Monolayers ◽  
Self Assembled

The presented article shows the influence of concentration of perfluoroalkylsilanes in solutions on tribological properties of self-assembled monolayers (SAMs) deposited on three surfaces with different silicon content in the millinewton load range. The SAMs were created using the liquid phase deposition (LPD) method with 1H, 1H, 2H, 2H-perfluorodecyltrichlorosilane (FDTS) and (3, 3, 3-trifluoropropyl) trichlorosilane (FPTS) solutions, for which viscosity and surface tension were estimated. Deposited layers were analyzed in terms of thickness, coverage, wettability, structure and coefficient of friction. The obtained results demonstrated that SAMs created on the silicon-incorporated diamond-like carbon (Si-DLC) coatings possess the best microtribological properties. Systems composed of perfluoroalkylsilane SAM structures deposited on Si-DLC coatings are highly promising candidates as material for microelectromechanical applications.

Preparation of Sm2S3 thin films by liquid phase deposition method with self-assembled monolayers

2012 ◽  
Vol 536 ◽  
pp. 119-123 ◽  
Author(s):  
Hou Yan-chao ◽  
Huang Jian-feng ◽  
Zhou Xuan ◽  
Cao Li-yun ◽  
Yin Li-Xiong
Keyword(s):  
Thin Films ◽  
Liquid Phase ◽  
Self Assembled Monolayers ◽  
Liquid Phase Deposition ◽  
Deposition Method ◽  
Assembled Monolayers ◽  
Self Assembled

Micropatterning of Titanium Dioxide on Self-Assembled Monolayers Using a Liquid-Phase Deposition Process

1999 ◽  
Vol 11 (9) ◽  
pp. 2305-2309 ◽  
Author(s):  
K. Koumoto ◽  
S. Seo ◽  
T. Sugiyama ◽  
W. S. Seo ◽  
W. J. Dressick
Keyword(s):  
Titanium Dioxide ◽  
Liquid Phase ◽  
Deposition Process ◽  
Self Assembled Monolayers ◽  
Liquid Phase Deposition ◽  
Assembled Monolayers ◽  
Self Assembled

Properties of BiFeO3 Thin Films Prepared with Self-Assembled Monolayers by Liquid Phase Deposition

2012 ◽  
Vol 512-515 ◽  
pp. 1244-1248
Author(s):  
Jun Yin ◽  
Guo Qiang Tan ◽  
Li Hua Song ◽  
Ao Xia ◽  
Hui Jun Ren
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Liquid Phase ◽  
Deposition Temperature ◽  
Raw Materials ◽  
Self Assembled Monolayers ◽  
Liquid Phase Deposition ◽  
Test Frequency ◽  
Assembled Monolayers ◽  
Self Assembled

Using iron nitrate, bismuth nitrate, citric acid and glacial acetic acid as the raw materials, the BiFeO3 thin films in crystalline state were prepared on FTO substrate with the self-assembled monolayers by liquid phase deposition after graded induction and annealing at 550°C for 30min. The physical phase composition, the surface morphology and dielectric properties of the thin films were characterized respectively by XRD, SEM, and Precision LCR Meter. This paper studied that the deposition temperature and the number of film layers had the effects on the thin films. The results show that the as-prepared thin films show the random orientation and good crystalline. When the deposition temperature is 70°C, the surface of the as-prepared thin film is smooth and uniform. The size of grain is 100nm. The thin film has a dense structure without the apparent pore phase. When the test frequency is between 1kHz and 1MHz, the loss of the thin films is decreased as the increase of the number of the film layers. When the number of the layers is 15, the dielectric constant of the thin films is 44 and the loss is 0.02 when the test frequency is 10kHz.

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