The role of sulfur in promoted growth of carbon nanotubes in chemical vapor deposition proposed through the characterizations on catalytic nanoparticles

2019 ◽  
Vol 471 ◽  
pp. 587-594 ◽  
Author(s):  
Shunsuke Suzuki ◽  
Shinsuke Mori
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Catalytic Nanoparticles

Synthysis of S Doped Y-Junction Carbon Nanotubes by CVD Method

2011 ◽  
Vol 183-185 ◽  
pp. 1731-1735 ◽  
Author(s):  
Xia Yuan ◽  
Xiao Juan Wu ◽  
Yu Liang An ◽  
Qing Yi Hou
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Carbon Disulfide ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Processing Parameters ◽  
Structure And Morphology ◽  
Cvd Method

The sulfur-doped Y-junction carbon nanotubes (S-YCNTs) were prepared by chemical vapor deposition of carbon disulfide using Fe as catalyst. Sulfur can be incorporated into the nanotubes with an identifiable amount, forming sulfur-doped carbon nanotubes. The growth of asymmetrical Y-branches in the nanotubes may be related to the presence of sulfur from precursor. The structure and morphology of S-YCNTs can be controlled by processing parameters. The S-YCNTs were characterized by SEM, TEM, EDX, and XPS, respectively. The growth mechanism of S-YCNTs was discussed in terms of the role of sulfur from carbon feedstock.

Role of carbon atoms in plasma-enhanced chemical vapor deposition for carbon nanotubes synthesis

2006 ◽  
Vol 515 (4) ◽  
pp. 1314-1319 ◽  
Author(s):  
M.A. Bratescu ◽  
Y. Suda ◽  
Y. Sakai ◽  
N. Saito ◽  
O. Takai
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor

Carbon nanotubes by plasma-enhanced chemical vapor deposition

2006 ◽  
Vol 78 (6) ◽  
pp. 1117-1125 ◽  
Author(s):  
Martin S. Bell ◽  
Kenneth B. K. Teo ◽  
Rodrigo G. Lacerda ◽  
W. I. Milne ◽  
David B. Hash ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Plasma Chemistry ◽  
Chemical Vapor ◽  
Plasma Sheath ◽  
Ni Catalyst ◽  
Ion Molecule Reactions ◽  
Nanotube Growth

This paper presents the growth of vertically aligned carbon nanotubes by plasma-enhanced chemical vapor deposition (PECVD) using Ni catalyst and C2H2/NH3 feedstock. The role of plasma in aligning the carbon nanotubes during growth is investigated both experimentally and computationally, confirming that the field in the plasma sheath causes the nanotubes to be aligned. Experiments using a plasma analyzer show that C2H2 is the dominant precursor for carbon nanotube growth. The role of NH3 in the plasma chemistry is also investigated, and experimental results show how the interaction between NH3 and the C2H2 carbon feedstock in the gas phase explains the structural variation in deposited nanotubes for differing gas ratios. The effects of varying the plasma power during deposition on nanotube growth rate is also explored. Finally, the role of endothermic ion-molecule reactions in the plasma sheath is investigated by comparing measured data with simulation results.

Understanding the Role of Sulfur in Tuning the Diameter and Morphology in the Chemical Vapor Deposition Growth of Carbon Nanotubes

2011 ◽  
Vol 1 (2) ◽  
pp. 160-166 ◽  
Author(s):  
Rahul Rao ◽  
Neal Pierce ◽  
Xianfeng Zhang ◽  
Robert Wheeler ◽  
Benji Maruyama ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth
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