The absence of ferroelectric polarization in layered and rock-salt ordered NaLnMnWO6 (Ln = La, Nd, Tb) perovskites

Time dependence of current in response to the first and second negative electric field pulses indicating the absence of ferroelectricity in NaNdMnWO6.

OBSERVATION OF NEW SUPERCONDUCTIVITY AND PERFORMANCE IMPROVEMENT BY EMPLOYING CYCLOTRON OF ELECTRON PAIRS

A novel temperature-independent superconducting device that employs a doped semiconductor is presented in this study. The underlying theory of this superconductivity is confirmed by experimental results. Specifically, superconductivity generates a negative electric field with characteristics of both electrostatic and current-induced fields. This type of electric field creates a new paired interaction between two electrons and implies the existence of a new force. The negative electric field also exhibits the Meissner effect. Moreover, magnetic flux quanta are produced in the semiconductor. The Aharonov–Bohm effect is exhibited to create a superconducting current along the electric circuit of the superconducting system. Therefore, a load introduced to the circuit will also become superconductive. This finding has strong potential for practical applications. To solve the problem of critical current, a static magnetic field is applied. This field combines with the new electric field to yield cyclotron motion, which increases superconducting current.

Negative Field Reliability of ONO Gate Dielectric on 4H-SiC

It was experimentally shown that an ONO gate dielectric carefully formed on 4H-SiC has extremely high reliability even under a negative electric field at least up to a junction temperature of 300°C, making it promising for power MOS and CMOS applications. Medium charge to failure of –30 C/cm2 was achieved for fully processed polycrystalline Si gate MONOS capacitors with an equivalent SiO2 thickness of teq = 44 nm and a 200-μm diameter. The medium time to failure of these capacitors projected for –3 MV/cm exceeds 86 and 6.3 thousand years at room temperature and 300°C, respectively. A parasitic memory action did not appear even when Eox of -6.6 MV/cm was applied for 5000 seconds.