Formation of carbon nanotubes by plasma enhanced chemical vapor deposition: Role of nitrogen and catalyst layer thickness

2002 ◽  
Vol 92 (10) ◽  
pp. 6188-6194 ◽  
Author(s):  
L. Valentini ◽  
J. M. Kenny ◽  
L. Lozzi ◽  
S. Santucci
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Layer Thickness ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Catalyst Layer

Synthysis of S Doped Y-Junction Carbon Nanotubes by CVD Method

2011 ◽  
Vol 183-185 ◽  
pp. 1731-1735 ◽  
Author(s):  
Xia Yuan ◽  
Xiao Juan Wu ◽  
Yu Liang An ◽  
Qing Yi Hou
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Carbon Disulfide ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Processing Parameters ◽  
Structure And Morphology ◽  
Cvd Method

The sulfur-doped Y-junction carbon nanotubes (S-YCNTs) were prepared by chemical vapor deposition of carbon disulfide using Fe as catalyst. Sulfur can be incorporated into the nanotubes with an identifiable amount, forming sulfur-doped carbon nanotubes. The growth of asymmetrical Y-branches in the nanotubes may be related to the presence of sulfur from precursor. The structure and morphology of S-YCNTs can be controlled by processing parameters. The S-YCNTs were characterized by SEM, TEM, EDX, and XPS, respectively. The growth mechanism of S-YCNTs was discussed in terms of the role of sulfur from carbon feedstock.

Synthesis of Vertically Aligned Carbon Nanotubes by dc PECVD

2006 ◽  
Vol 326-328 ◽  
pp. 333-336
Author(s):  
Yun Young Bang ◽  
Tae Jin Je ◽  
Kyung Hyun Whang ◽  
Won Seok Chang
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Carbon Source ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Catalyst Layer ◽  
Metal Catalyst ◽  
Synthesis Methods ◽  
Multi Wall Carbon Nanotubes ◽  
Vertically Aligned

Chemical vapor deposition (CVD) is one of the various synthesis methods that have been employed for CNT growth. In particular, Ren et al reported that large areas of vertically aligned multi-wall carbon nanotubes could be grown using plasma enhanced chemical vapor deposition (PECVD). In the present study, we synthesized aligned CNT arrays using a direct current (dc) PECVD system. The synthesis of CNTs requires a metal catalyst layer, etchant gas, and a carbon source. In this study, the substrate consisted of Si wafers with 10, 30, and 50 nm Ni-sputtered film. Ammonia (NH3) and acetylene (C2H2) were used as the etchant gases and carbon source, respectively. NH3 pretreatment was processed using a flow rate of 180 sccm for 10 min. CNTs were grown on pretreated substrates at 30% C2H2:NH3 flow ratios for 10 min. Carbon nanotubes with diameters ranging from 60 to 80 nanometers and lengths of about 2.7 μm were obtained. Vertical alignment of the carbon nanotubes was observed by FE-SEM.

Role of carbon atoms in plasma-enhanced chemical vapor deposition for carbon nanotubes synthesis

2006 ◽  
Vol 515 (4) ◽  
pp. 1314-1319 ◽  
Author(s):  
M.A. Bratescu ◽  
Y. Suda ◽  
Y. Sakai ◽  
N. Saito ◽  
O. Takai
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor

Carbon nanotubes by plasma-enhanced chemical vapor deposition

2006 ◽  
Vol 78 (6) ◽  
pp. 1117-1125 ◽  
Author(s):  
Martin S. Bell ◽  
Kenneth B. K. Teo ◽  
Rodrigo G. Lacerda ◽  
W. I. Milne ◽  
David B. Hash ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Plasma Chemistry ◽  
Chemical Vapor ◽  
Plasma Sheath ◽  
Ni Catalyst ◽  
Ion Molecule Reactions ◽  
Nanotube Growth

This paper presents the growth of vertically aligned carbon nanotubes by plasma-enhanced chemical vapor deposition (PECVD) using Ni catalyst and C2H2/NH3 feedstock. The role of plasma in aligning the carbon nanotubes during growth is investigated both experimentally and computationally, confirming that the field in the plasma sheath causes the nanotubes to be aligned. Experiments using a plasma analyzer show that C2H2 is the dominant precursor for carbon nanotube growth. The role of NH3 in the plasma chemistry is also investigated, and experimental results show how the interaction between NH3 and the C2H2 carbon feedstock in the gas phase explains the structural variation in deposited nanotubes for differing gas ratios. The effects of varying the plasma power during deposition on nanotube growth rate is also explored. Finally, the role of endothermic ion-molecule reactions in the plasma sheath is investigated by comparing measured data with simulation results.

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