Carbon nanotubes by plasma-enhanced chemical vapor deposition

This paper presents the growth of vertically aligned carbon nanotubes by plasma-enhanced chemical vapor deposition (PECVD) using Ni catalyst and C2H2/NH3 feedstock. The role of plasma in aligning the carbon nanotubes during growth is investigated both experimentally and computationally, confirming that the field in the plasma sheath causes the nanotubes to be aligned. Experiments using a plasma analyzer show that C2H2 is the dominant precursor for carbon nanotube growth. The role of NH3 in the plasma chemistry is also investigated, and experimental results show how the interaction between NH3 and the C2H2 carbon feedstock in the gas phase explains the structural variation in deposited nanotubes for differing gas ratios. The effects of varying the plasma power during deposition on nanotube growth rate is also explored. Finally, the role of endothermic ion-molecule reactions in the plasma sheath is investigated by comparing measured data with simulation results.

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The role of sulfur in promoted growth of carbon nanotubes in chemical vapor deposition proposed through the characterizations on catalytic nanoparticles

Applied Surface Science ◽

10.1016/j.apsusc.2018.12.046 ◽

2019 ◽

Vol 471 ◽

pp. 587-594 ◽

Cited By ~ 1

Author(s):

Shunsuke Suzuki ◽

Shinsuke Mori

Keyword(s):

Carbon Nanotubes ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Catalytic Nanoparticles

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Variation of Size and Alignment in Carbon Nanotubes by Changes of Growth Condition

Microscopy and Microanalysis ◽

10.1017/s143192760002821x ◽

2001 ◽

Vol 7 (S2) ◽

pp. 428-429

Author(s):

Paula P. Provencio ◽

Michael P. Siegal ◽

Donald L. Overmyer

Keyword(s):

Carbon Nanotubes ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Dwell Time ◽

Chemical Vapor ◽

Deposition Process ◽

Nitrogen Atmosphere ◽

Ni Catalyst ◽

Multiwall Carbon Nanotube ◽

Catalyst Layers

Carbon nanotubes have previously been grown on Ni coated glass, aligned vertical to the substrate over a multi-centimeter square area1. Under vacuum, the aligned nanotubes were grown below 666° C (strain point of the best display glass) by plasma-enhanced hot filament, chemical vapor deposition. It was found, the size and alignment of the nanotubes could be varied by changing the dwell time and the thickness of the catalytic Ni layer by plasma etching. in more recent, ongoing studies, the size of carbon nanotubes is varied by changing the growth temperature and dwell time under acetylene/nitrogen atmosphere using chemical vapor deposition onto W and Ni coated Si.Multiwall carbon nanotube films are grown using a thermally-activated chemical vapor deposition process. Thin Ni catalyst layers are sputtered onto W-coated Si(100) and reduced in a 600°C CO anneal. Nanotubes then grow at temperatures ranging from 630 - 790°C in an acetylene/nitrogen mixture.

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Role of thin Fe catalyst in the synthesis of double- and single-wall carbon nanotubes via microwave chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.1796529 ◽

2004 ◽

Vol 85 (13) ◽

pp. 2601-2603 ◽

Cited By ~ 84

Author(s):

Y. Y. Wang ◽

S. Gupta ◽

R. J. Nemanich

Keyword(s):

Carbon Nanotubes ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Single Wall Carbon Nanotubes ◽

Single Wall Carbon ◽

Fe Catalyst

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Role of Negative Electric Field Biasing on Growth of Vertically Aligned Carbon Nanotubes Using Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.7436 ◽

2008 ◽

Vol 47 (9) ◽

pp. 7436-7439 ◽

Cited By ~ 12

Author(s):

Takafumi Matsuda ◽

Marcel Mesko ◽

Tomokazu Ishikawa ◽

Jun Sato ◽

Akihisa Ogino ◽

...

Keyword(s):

Carbon Nanotubes ◽

Chemical Vapor Deposition ◽

Electric Field ◽

Vapor Deposition ◽

Chemical Vapor ◽

Vertically Aligned Carbon Nanotubes ◽

Aligned Carbon Nanotubes ◽

Vertically Aligned ◽

Negative Electric Field

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Synthysis of S Doped Y-Junction Carbon Nanotubes by CVD Method

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.183-185.1731 ◽

2011 ◽

Vol 183-185 ◽

pp. 1731-1735 ◽

Cited By ~ 4

Author(s):

Xia Yuan ◽

Xiao Juan Wu ◽

Yu Liang An ◽

Qing Yi Hou

Keyword(s):

Carbon Nanotubes ◽

Chemical Vapor Deposition ◽

Carbon Disulfide ◽

Growth Mechanism ◽

Vapor Deposition ◽

Chemical Vapor ◽

Processing Parameters ◽

Structure And Morphology ◽

Cvd Method

The sulfur-doped Y-junction carbon nanotubes (S-YCNTs) were prepared by chemical vapor deposition of carbon disulfide using Fe as catalyst. Sulfur can be incorporated into the nanotubes with an identifiable amount, forming sulfur-doped carbon nanotubes. The growth of asymmetrical Y-branches in the nanotubes may be related to the presence of sulfur from precursor. The structure and morphology of S-YCNTs can be controlled by processing parameters. The S-YCNTs were characterized by SEM, TEM, EDX, and XPS, respectively. The growth mechanism of S-YCNTs was discussed in terms of the role of sulfur from carbon feedstock.

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