2D HfN2/graphene interface based Schottky device: Unmatched controllability in electrical contacts and carrier concentration via electrostatic gating and out-of-plane strain

Out-of-plane strains and stresses are determined using reciprocity for the central region of very long bars (approaching infinite length) of uniform transverse cross section subjected to the same in-plane loads on every cross section. The loading explicitly specifies no end loads on the bars. The results are obtained without recourse to the in-plane solution. Conversely the end force and moment are determined for the case where the out-of-plane strain is zero.

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B23-O-01Peculiar Domains by Local Out-of- Plane Strain in Chemically Modified Bismuth Ferrite Thin Films

Microscopy ◽

10.1093/jmicro/dfv158 ◽

2015 ◽

Vol 64 (suppl 1) ◽

pp. i53.1-i53

Author(s):

Si-Young Choi ◽

Sung-Dae Kim ◽

Jungho Ryu

Keyword(s):

Thin Films ◽

Plane Strain ◽

Bismuth Ferrite ◽

Chemically Modified ◽

Out Of Plane ◽

Ferrite Thin Films

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Out-of-Plane Strain Induced in a Moiré Superstructure of Monolayer MoS2and MoSe2on Au(111)

Small ◽

10.1002/smll.201700748 ◽

2017 ◽

Vol 13 (31) ◽

pp. 1700748 ◽

Cited By ~ 6

Author(s):

Satoshi Yasuda ◽

Ryosuke Takahashi ◽

Ryo Osaka ◽

Ryota Kumagai ◽

Yasumitsu Miyata ◽

...

Keyword(s):

Plane Strain ◽

Out Of Plane

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Contribution Rate of In-plane and Out-of-plane Strain Energies on the Natural Frequencies of Twisted Bernoulli-Euler Beams

Transactions of the Korean Society for Noise and Vibration Engineering ◽

10.5050/ksnve.2018.28.3.305 ◽

2018 ◽

Vol 28 (3) ◽

pp. 305-312

Author(s):

Jung Woo Lee ◽

Chan U Jo ◽

Joon Seong Lee ◽

Jung Youn Lee

Keyword(s):

Plane Strain ◽

Natural Frequencies ◽

Contribution Rate ◽

Out Of Plane

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Electrical Contacts to Polycrystalline B Doped Diamond Films

MRS Proceedings ◽

10.1557/proc-162-341 ◽

1989 ◽

Vol 162 ◽

Cited By ~ 9

Author(s):

K. Nishimura ◽

K. Das ◽

M. Iwase ◽

J. T. Glass ◽

K. Kobashi

Keyword(s):

Carrier Concentration ◽

Room Temperature ◽

Microwave Plasma ◽

Diamond Films ◽

Electrical Contacts ◽

Plasma Cvd ◽

Microwave Plasma Cvd ◽

Order Of Magnitude

ABSTRACTB doped diamond films were synthesized by microwave plasma CVD and electrical contacts were fabricated by R F sputtering. Rc was obtained for Pt, Ni, TaSi2, and Al asdeposited contacts at room temperature. Pt gave the minimum Rc and Al gave the maximum Rc of the metals investigated on films containing a carrier concentration of 5 × 1018/cm3. The minimum Rc, 8.6 × 10−4 Ω cm 2, was obtained on heavily B doped diamond films with a carrier concentration of 2.7 × 1020/cm3. After nnealing at 400 °C, the Rc of Pt contacts on B doped diamond films with a resistivity of 2×104 Ω1 cm decreased by approximately one order of magnitude.

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