scholarly journals Investigation of oxygen penetration during UV nanosecond laser annealing of silicon at high energy densities

2021 ◽  
Vol 546 ◽  
pp. 149071
Author(s):  
R. Monflier ◽  
T. Tabata ◽  
H. Rizk ◽  
J. Roul ◽  
K. Huet ◽  
...  
Keyword(s):  
Laser Annealing ◽  
High Energy ◽  
Nanosecond Laser ◽  
Oxygen Penetration

Targeted Alternation in Properties of Solid Amorphous-Nanocrystalline Material in Exposing to Nanosecond Laser Radiation

2021 ◽  
Vol 410 ◽  
pp. 469-474
Author(s):  
Ivan S. Safronov ◽  
Alexander I. Ushakov
Keyword(s):  
Laser Radiation ◽  
Physical Properties ◽  
Materials Science ◽  
Chemical Properties ◽  
High Energy ◽  
Strength Properties ◽  
Nanosecond Laser ◽  
Processing Modes ◽  
Traditional Processing ◽  
Physical And Chemical

One of the most important purposes of materials science is the ability to govern the physical properties of materials characterized by different structures. The strength properties of nanostructured metal alloys do not always meet the exploitation requirements. The set of properties of such materials is stable within narrow limits: temperature, mechanical, and corrosion conditions. Traditional processing modes are ineffective for such materials. Attempts to use them often lead to the loss of unique physical and chemical properties. The most effective methods of processing such materials are associated with the use of laser radiation. The laser pulse has a number of features, including a complex effect on the surface layers of the material. Spot and short irradiation with high-energy rays can preserve the unique physical properties of samples as a whole and improve strength indicators without destroying the structure of the material as a whole.

Heat Transfer and Phase Transformations in Laser Annealing of Thin a-Si Films

2001 ◽  
Author(s):  
Seung-Jae Moon ◽  
Minghong Lee ◽  
Costas P. Grigoropoulos
Keyword(s):  
Laser Annealing ◽  
Thermal Emission ◽  
Electrical Conductance ◽  
Nanosecond Laser ◽  
Solidification Velocity ◽  
Emission Measurement ◽  
Excimer Laser Annealing ◽  
In Situ Experiments ◽  
Si Films

Abstract The liquid-solid interface motion and the temperature history of thin Si films during excimer laser annealing are observed by in situ experiments combining time-resolved (∼lns) thermal emission measurements, optical reflectance and transmittance at near-IR wavelengths and electrical conductance measurements. The spontaneous nucleation temperature in the supercooled liquid melt is studied from the thermal emission measurement A new double laser recrystallization technique using a temporally modulated CW Ar+ laser in conjunction with a superposed nanosecond laser pulse produces lateral grain growth at the irradiated spot. The laser melting process is numerically simulated. High-resolution laser flash photography enabled in-situ direct visualization of the resolidification process. The images reveal lateral solidification velocity of about 10 m/s.

Extended defects in ion-implanted si during nanosecond laser annealing

2014 ◽  
Author(s):  
F. Cristiano ◽  
Y. Qiu ◽  
E. Bedel-Pereira ◽  
K. Huet ◽  
F. Mazzamuto ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Nanosecond Laser ◽  
Extended Defects ◽  
Ion Implanted

Fabrication of Ni–Al thin films by the pulsed laser deposition technique

1992 ◽  
Vol 7 (10) ◽  
pp. 2639-2642 ◽  
Author(s):  
R.K. Singh ◽  
Deepika Bhattacharya ◽  
S. Sharan ◽  
P. Tiwari ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
High Energy ◽  
Laser Deposition ◽  
Nanosecond Laser ◽  
X Ray ◽  
Target Composition

We have fabricated Ni3Al and NiAl thin films on different substrates by the pulsed laser deposition (PLD) technique. A high energy nanosecond laser beam was directed onto Ni–Al (NiAl, Ni3Al) targets, and the evaporated material was deposited onto substrates placed parallel to the target. The substrate temperature was varied between 300 and 400 °C, and the substrate-target distance was maintained at approximately 5 cm. The films were analyzed using scanning electron microscopy, transmission electron microscopy, x-ray diffraction, and Rutherford backscattering spectrometry. At energy densities slightly above the evaporation threshold, a slight enrichment of Al was observed, while at higher energy densities the film stoichiometry was close (<5%) to the target composition. Barring a few particles, the surface of the films exhibited a smooth morphology. X-ray and TEM results corroborated the formation of Ni3Al and NiAl films from similar target compositions. These films were characterized by small randomly oriented grains with grain size varying between 200 and 400 Å.

Impact of Germanium Concentration on the Ultraviolet Nanosecond Laser Annealing of Intrinsic Si1-xGex Epitaxial Layers

2019 ◽  
Author(s):  
L. Dagault ◽  
S. Kerdilès ◽  
P. Acosta-Alba ◽  
J.-M. Hartmann ◽  
J.-P. Barnes ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Nanosecond Laser ◽  
Epitaxial Layers ◽  
Germanium Concentration

Pulsed Laser And Ion Beam Surface Modification of Sintered, Alpha-Sic

1985 ◽  
Vol 51 ◽  
Author(s):  
K. L. More ◽  
R. F. Davis ◽  
B. R. Appleton ◽  
D. Lowndes ◽  
P. Smith
Keyword(s):  
Electron Microscopy ◽  
Surface Modification ◽  
Laser Annealing ◽  
Ion Beam ◽  
Pulsed Laser ◽  
High Energy ◽  
Strength Increase ◽  
Ion Beam Mixing ◽  
Krf Excimer Laser ◽  
Surface Modification Techniques

ABSTRACTPulsed laser annealing and ion beam mixing have been used as surface modification techniques to enhance the physical properties of polycrystalline α-SiC. Thin Ni overlayers (20 nm - 100 nm) were evaporated onto the SiC surface. The specimens were subsequently irradiated with pulses of a ruby or krypton fluoride (KrF) excimer laser or bombarded with high energy Xe+ or Si+ ions. Both processes are non-equilibrium methods and each has been shown to induce unique microstructural changes at the SiC surface which are not attainable by conventional thermal treatments. Under particular (and optimum) processing conditions, these changes considerably increased the mechanical properties of the SiC; following laser irradiation, the fracture strength of the SiC was increased by as much as 50%, but after ion beam mixing, no strength increase was observed.High resolution cross-section transmission electron microscopy (X-TEM), scanning electron microscopy (SEM), and Rutherford backscattering techniques were used to characterize the extent of mixing between the Ni and the SiC as a result of the surface modification.

Au-Cluster Redistribution During Nanosecond Laser-Annealing of Metal/Insulator Matrices

1985 ◽  
Vol 51 ◽  
Author(s):  
W. Pamler ◽  
E. E. Marinero ◽  
M. Chen ◽  
V. B. Jipson
Keyword(s):  
Laser Annealing ◽  
Depth Profiling ◽  
Nanosecond Laser ◽  
Laser Interaction ◽  
X Ray Diffraction ◽  
Metal Insulator ◽  
Time Resolved ◽  
Au Clusters ◽  
Excimer Laser Radiation ◽  
Compositional Changes

ABSTRACTWe report on the growth and redistribution of Au clusters caused by nanosecond laser interaction of Aux(TeO2 )1−x thin films with intense excimer laser radiation. This laser-induced phenomenon is studied in a time-resolved manner using transient reflectivity and transmissivity techniques. Structural and compositional changes are investigated using Rutherford Backscattering, XPS depth profiling, x-ray diffraction and conductivity measurements. Our studies indicate that melting of the binary structure initializes segregation, growth and coalescence of Au crystallites in the amorphous TeO2 matrix.

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