Investigation of the metal-to-insulator transition of N-doped VO2(M1) thin films

2021 ◽  
pp. 149661
Author(s):  
Simon Chouteau ◽  
Sabeur Mansouri ◽  
Mohamed Lemine Ould Ne Mohamedou ◽  
Jérémie Chaillou ◽  
Aminat Oyiza Suleiman ◽  
...  
ACS Photonics ◽  
2020 ◽  
Vol 7 (6) ◽  
pp. 1560-1568
Author(s):  
Vincent Drechsler ◽  
Joachim Krauth ◽  
Julian Karst ◽  
Harald Giessen ◽  
Mario Hentschel

2013 ◽  
Vol 102 (10) ◽  
pp. 101904 ◽  
Author(s):  
J. Kündel ◽  
P. Pontiller ◽  
C. Müller ◽  
G. Obermeier ◽  
Z. Liu ◽  
...  

2019 ◽  
Vol 9 (1) ◽  
pp. 144 ◽  
Author(s):  
Zhaoliang Liao ◽  
Jiandi Zhang

Thickness-driven phase transitions have been widely observed in many correlated transition metal oxides materials. One of the important topics is the thickness-driven metal to insulator transition in half-metal La2/3Sr1/3MnO3 (LSMO) thin films, which has attracted great attention in the past few decades. In this article, we review research on the nature of the metal-to-insulator (MIT) transition in LSMO ultrathin films. We discuss in detail the proposed mechanisms, the progress made up to date, and the key issues existing in understanding the related MIT. We also discuss MIT in other correlated oxide materials as a comparison that also has some implications for understanding the origin of MIT.


RSC Advances ◽  
2016 ◽  
Vol 6 (114) ◽  
pp. 112864-112869 ◽  
Author(s):  
G. H. Wegher ◽  
E. R. Viana ◽  
G. M. Ribeiro ◽  
J. F. Deus

Thin films of graphene oxide and a composite of graphene oxide with titanium oxide were prepared via an alternative chemical route based on Hummer's method. Metal-to-Insulator Transition (MIT) were observed for GO (at 280 K) and for GO + TiO2 (at 260 K).


2014 ◽  
Vol 80 ◽  
pp. 16-24 ◽  
Author(s):  
Xiaoyan Li ◽  
Alexandre Gloter ◽  
Alberto Zobelli ◽  
Hui Gu ◽  
Xun Cao ◽  
...  

2021 ◽  
pp. 151608
Author(s):  
M. Caputo ◽  
J. Jandke ◽  
E. Cappelli ◽  
S. Kumar Chaluvadi ◽  
E. Bonini Guedes ◽  
...  

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