scholarly journals Metal-to-Insulator Transition in Ultrathin Manganite Heterostructures

2019 ◽  
Vol 9 (1) ◽  
pp. 144 ◽  
Author(s):  
Zhaoliang Liao ◽  
Jiandi Zhang
Keyword(s):  
Thin Films ◽  
Phase Transitions ◽  
Transition Metal Oxides ◽  
Ultrathin Films ◽  
Insulator Transition ◽  
Oxide Materials ◽  
The Past ◽  
Half Metal ◽  
Metal To Insulator Transition ◽  
Key Issues

Thickness-driven phase transitions have been widely observed in many correlated transition metal oxides materials. One of the important topics is the thickness-driven metal to insulator transition in half-metal La2/3Sr1/3MnO3 (LSMO) thin films, which has attracted great attention in the past few decades. In this article, we review research on the nature of the metal-to-insulator (MIT) transition in LSMO ultrathin films. We discuss in detail the proposed mechanisms, the progress made up to date, and the key issues existing in understanding the related MIT. We also discuss MIT in other correlated oxide materials as a comparison that also has some implications for understanding the origin of MIT.

Investigation of the metal-to-insulator transition of N-doped VO2(M1) thin films

2021 ◽  
pp. 149661
Author(s):  
Simon Chouteau ◽  
Sabeur Mansouri ◽  
Mohamed Lemine Ould Ne Mohamedou ◽  
Jérémie Chaillou ◽  
Aminat Oyiza Suleiman ◽  
...  
Keyword(s):  
Thin Films ◽  
Insulator Transition ◽  
Metal To Insulator Transition

Switchable Optical Nonlinearity at the Metal to Insulator Transition in Magnesium Thin Films

ACS Photonics ◽  
2020 ◽  
Vol 7 (6) ◽  
pp. 1560-1568
Author(s):  
Vincent Drechsler ◽  
Joachim Krauth ◽  
Julian Karst ◽  
Harald Giessen ◽  
Mario Hentschel
Keyword(s):  
Thin Films ◽  
Optical Nonlinearity ◽  
Insulator Transition ◽  
Metal To Insulator Transition

Direct observation of the lattice precursor of the metal-to-insulator transition in V2O3 thin films by surface acoustic waves

2013 ◽  
Vol 102 (10) ◽  
pp. 101904 ◽  
Author(s):  
J. Kündel ◽  
P. Pontiller ◽  
C. Müller ◽  
G. Obermeier ◽  
Z. Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Direct Observation ◽  
Acoustic Waves ◽  
Surface Acoustic Waves ◽  
Insulator Transition ◽  
Metal To Insulator Transition

scholarly journals Phase transitions via selective elemental vacancy engineering in complex oxide thin films

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Sang A. Lee ◽  
Hoidong Jeong ◽  
Sungmin Woo ◽  
Jae-Yeol Hwang ◽  
Si-Young Choi ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transitions ◽  
Transition Metal Oxides ◽  
Complex Oxides ◽  
Complex Oxide ◽  
Magnetic Phase Transitions ◽  
Defect Engineering ◽  
Oxide Thin Films ◽  
Two Phase ◽  
Experimental Approaches

Abstract Defect engineering has brought about a unique level of control for Si-based semiconductors, leading to the optimization of various opto-electronic properties and devices. With regard to perovskite transition metal oxides, O vacancies have been a key ingredient in defect engineering, as they play a central role in determining the crystal field and consequent electronic structure, leading to important electronic and magnetic phase transitions. Therefore, experimental approaches toward understanding the role of defects in complex oxides have been largely limited to controlling O vacancies. In this study, we report on the selective formation of different types of elemental vacancies and their individual roles in determining the atomic and electronic structures of perovskite SrTiO3 (STO) homoepitaxial thin films fabricated by pulsed laser epitaxy. Structural and electronic transitions have been achieved via selective control of the Sr and O vacancy concentrations, respectively, indicating a decoupling between the two phase transitions. In particular, O vacancies were responsible for metal-insulator transitions, but did not influence the Sr vacancy induced cubic-to-tetragonal structural transition in epitaxial STO thin film. The independent control of multiple phase transitions in complex oxides by exploiting selective vacancy engineering opens up an unprecedented opportunity toward understanding and customizing complex oxide thin films.

Metal-to-insulator transition near room temperature in graphene oxide and graphene oxide + TiO2 thin films

RSC Advances ◽  
2016 ◽  
Vol 6 (114) ◽  
pp. 112864-112869 ◽  
Author(s):  
G. H. Wegher ◽  
E. R. Viana ◽  
G. M. Ribeiro ◽  
J. F. Deus
Keyword(s):  
Thin Films ◽  
Graphene Oxide ◽  
Titanium Oxide ◽  
Room Temperature ◽  
Insulator Transition ◽  
Tio2 Thin Films ◽  
Chemical Route ◽  
Metal To Insulator Transition

Thin films of graphene oxide and a composite of graphene oxide with titanium oxide were prepared via an alternative chemical route based on Hummer's method. Metal-to-Insulator Transition (MIT) were observed for GO (at 280 K) and for GO + TiO2 (at 260 K).

scholarly journals Direct evidence of tungsten clustering in W0.02V0.98O2 thin films and its effect on the metal-to-insulator transition

2014 ◽  
Vol 80 ◽  
pp. 16-24 ◽  
Author(s):  
Xiaoyan Li ◽  
Alexandre Gloter ◽  
Alberto Zobelli ◽  
Hui Gu ◽  
Xun Cao ◽  
...  
Keyword(s):  
Thin Films ◽  
Direct Evidence ◽  
Insulator Transition ◽  
Metal To Insulator Transition
Sign in / Sign up

Export Citation Format

Share Document