Hydrogenated Boron Phosphide with the excellent tunability of electronic properties and Current-Voltage responses

2021 ◽  
pp. 151196
Author(s):  
Chunjian Tan ◽  
Quan Zhou ◽  
Xu Liu ◽  
Guoqi Zhang ◽  
Huaiyu Ye ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Boron Phosphide ◽  
Current Voltage

scholarly journals Structural, elastic, and electronic properties of chemically functionalized boron phosphide monolayer

RSC Advances ◽  
2021 ◽  
Vol 11 (15) ◽  
pp. 8552-8558
Author(s):  
Tuan V. Vu ◽  
A. I. Kartamyshev ◽  
Nguyen V. Hieu ◽  
Tran D. H. Dang ◽  
Sy-Ngoc Nguyen ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Surface Functionalization ◽  
Two Dimensional ◽  
Boron Phosphide

Surface functionalization is one of the useful techniques for modulating the mechanical and electronic properties of two-dimensional systems.

ChemInform Abstract: Structural, Optical, and Electronic Properties of Silicon/Boron Phosphide Heterojunction Photoelectrodes.

ChemInform ◽  
2010 ◽  
Vol 22 (27) ◽  
pp. no-no
Author(s):  
A. GOOSSENS ◽  
E. M. KELDER ◽  
R. J. M. BEEREN ◽  
C. J. G. BARTELS ◽  
J. SCHOONMAN
Keyword(s):  
Electronic Properties ◽  
Boron Phosphide ◽  
Optical And Electronic Properties

Effect of hydrostatic pressure on the structural, elastic and electronic properties of (B3) boron phosphide

Pramana ◽  
2012 ◽  
Vol 79 (1) ◽  
pp. 95-106 ◽  
Author(s):  
SALAH DAOUD ◽  
KAMEL LOUCIF ◽  
NADHIRA BIOUD ◽  
NOUDJOUD LEBGAA ◽  
LAARBI BELAGRAA
Keyword(s):  
Hydrostatic Pressure ◽  
Electronic Properties ◽  
Boron Phosphide ◽  
Effect Of Hydrostatic Pressure

Structural, Optical, and Electronic Properties of Silicon/Boron Phosphide Heterojunction Photoelectrodes

1991 ◽  
Vol 95 (4) ◽  
pp. 503-510 ◽  
Author(s):  
A. Goossens ◽  
E. M. Kelder ◽  
R. J. M. Beeren ◽  
C. J. G. Bartels ◽  
J. Schoonman
Keyword(s):  
Electronic Properties ◽  
Boron Phosphide ◽  
Optical And Electronic Properties

Electronic Properties of ZnO/Si Heterojunction Prepared by ALD.

2011 ◽  
Vol 178-179 ◽  
pp. 130-135 ◽  
Author(s):  
Vincent Quemener ◽  
Mari Alnes ◽  
Lasse Vines ◽  
Ola Nilsen ◽  
Helmer Fjellvåg ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Deep Level ◽  
Atomic Layer ◽  
Substantial Improvement ◽  
Conduction Band Edge ◽  
Energy Position ◽  
Layer Deposition ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Transient Spectroscopy

ZnO/n-Si and ZnO/p-Si heterostructures were prepared by Atomic layer deposition (ALD) and the electronic properties have been investigated by Current-Voltage (I-V), Capacitance-Voltage (C-V) and Deep level transient spectroscopy (DLTS) measurements. DLTS measurements show two dominants electron traps at the interface of the ZnO/n-Si junction with energy position at 0.07 eV and 0.15 eV below the conduction band edge, labelled E(0.07) and E(0.15), respectively, and no electrically active defects at the interface of the ZnO/p-Si junction. E(0.07) is reduced by annealing up to 400°C while E(0.15) is created at 500°C. The best heterostructure is found after heat treatment at 400°C with a substantial improvement of the current rectification for ZnO/n-Si and the formation of Ohmic contact on ZnO/p-Si. A reduction of the interface defects correlates with an improvement of the crystal structure of the ZnO film with a preferred orientation along the c-axis.

scholarly journals Realization of a p–n junction in a single layer boron-phosphide

2015 ◽  
Vol 17 (19) ◽  
pp. 13013-13020 ◽  
Author(s):  
Deniz Çakır ◽  
Deniz Kecik ◽  
Hasan Sahin ◽  
Engin Durgun ◽  
Francois M. Peeters
Keyword(s):  
Electronic Properties ◽  
First Principles ◽  
Mechanical Stability ◽  
Single Layer ◽  
First Principles Calculations ◽  
Promising Candidate ◽  
Boron Phosphide

First-principles calculations indicate that due to its mechanical stability and promising electronic properties, boron-phosphide monolayer would be a promising candidate for application in a p–n junction.

Electronic properties of (NH4)2S passivated InP(100) surfaces

1992 ◽  
Vol 70 (10-11) ◽  
pp. 1039-1042 ◽  
Author(s):  
Y. Tao ◽  
A. Yelon ◽  
R. Leonelli
Keyword(s):  
Electronic Properties ◽  
Schottky Diode ◽  
Voltage Characteristic ◽  
Band Edge ◽  
Photoluminescence Intensity ◽  
Thermally Stable ◽  
Current Voltage Characteristic ◽  
Current Voltage ◽  
Diode Current

We have recently presented a method that yields chemically and thermally stable S-passivated InP(100) – (1 × 1) surfaces. Here we characterize the surface electronic properties using two techniques: band edge and exciton photoluminescence intensity and Schottky diode current–voltage characteristic measurements. We compare etched and S-treated samples, both in the as-prepared condition and after annealing. These measurements show that the S-treated surfaces have better properties than the etched ones. In particular, photoluminescence intensities are improved by a factor of two to four.

Sign in / Sign up

Export Citation Format

Share Document