Thermal stability of surface oxides on nickel alloys (NiCr and NiCrMo) investigated by XPS and ToF-SIMS

2021 ◽  
pp. 151836
Author(s):  
Zuocheng Wang ◽  
Charly Carrière ◽  
Antoine Seyeux ◽  
Sandrine Zanna ◽  
Dimitri Mercier ◽  
...  
Author(s):  
V.N. Gadalov ◽  
A.V. Filonovich ◽  
I.V. Vornacheva ◽  
E.A. Filatov ◽  
I.A. Makarova

The positive effect of alloying elements on the thermal stability of the γ-matrix and the strengthening γ'-phase of casting nickel alloys, and consequently, on the increase in their heat-temperature strength is established. The alloying elements inhibit diffusion processes, thereby increasing the creep resistance of alloys at high temperatures and loads. It is found that the most indicative parameters of the phase composition of the test alloys are the alloying elements distribution coefficients between the γ- and γ'-phases. The basic principles of balanced alloying are formulated, on which the choice of the optimal chemical composition of heat-temperature nickel alloys is carried out.


Author(s):  
Luis M. Rodríguez ◽  
Lucila J. Cristina ◽  
Leonardo Salazar Alarcón ◽  
Bárbara Blum ◽  
Roberto C. Salvarezza ◽  
...  

1974 ◽  
Vol 17 (1) ◽  
pp. 70-75
Author(s):  
V. I. Alen'kin ◽  
V. A. Kulikov ◽  
A. N. Shurygin

2009 ◽  
Vol 1155 ◽  
Author(s):  
Karol Fröhlich ◽  
Andrej Vincze ◽  
Edmund Dobročka ◽  
Kristina Hušeková ◽  
Karol Čičo ◽  
...  

AbstractWe present analysis of thermal stability of thin GdScO3 films grown on silicon and InAlN/GaN substrates. The GdScO3 films were prepared by liquid injection metal organic chemical vapor deposition at 600 °C. The films were processed after deposition by rapid thermal annealing in nitrogen ambient at 900, 1000 and 1100 °C during 10 s. In addition, annealing of the GdScO3 films on InAlN/GaN substrate at 700 °C during 3 hours was performed. The samples were analyzed by grazing incidence X-ray diffraction (GIXRD), X-ray reflectivity (XRR) and time-of-flight secondary ion mass spectroscopy (ToF SIMS). GIXRD confirmed that the as-deposited GdScO3 films were amorphous. Recrystallization of the films on both substrates occurred at 1100 °C. ToF SIMS depth profile of the films annealed at 1000 °C indicated strong reaction of the GdScO3 film with the Si substrate. For the InAlN/GaN substrate rapid thermal annealing at 900 °C induced diffusion of the In and Al atoms into the top GdScO3 layer. Thermal treatment at 700 °C for 3 hours presents upper limit of the acceptable thermal budget for the GdScO3/InAlN interface.


Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization


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