Surface Zn enrichment induced by excimer laser annealing in ZnO nanorods

2022 ◽  
pp. 152313
Author(s):  
I. Carlomagno ◽  
I. Lucarini ◽  
V. Secchi ◽  
F. Maita ◽  
D. Polese ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Zno Nanorods ◽  
Excimer Laser Annealing

Large-Grain Doped Poly-Si Films Fabricated Using New Excimer Laser Annealing Technique

1992 ◽  
Vol 283 ◽  
Author(s):  
Hiroshi Iwata ◽  
Tomoyuki Nohda ◽  
Satoshi Ishida ◽  
Takashi Kuwahara ◽  
Keiichi Sano ◽  
...  
Keyword(s):  
Grain Size ◽  
Sheet Resistance ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Solidification Velocity ◽  
Excimer Laser Annealing ◽  
Arf Excimer Laser ◽  
Si Films

ABSTRACTThe grain size of phosphorous (P)-doped poly-Si film has been enlarged to about 5000 Å by controlling the solidification velocity of molten Si during ArF excimer laser annealing. The drastically enlarged grain has few defects inside the grain. It has been confirmed that control of the solidification velocity is effective for P-doped poly-Si similar to the case of non-doped poly-Si films. In addition, a sheet resistance of 80 Ω/□ (ρ = 4 × 10-4 Ω · cm) has been achieved for very thin (500 Å) films by recrystallizing PECVD P-doped a-Si films.

Grain Enlargement of Polycrystalline Silicon by Multipulse Excimer Laser Annealing: Role of Hydrogen

2006 ◽  
Vol 45 (4A) ◽  
pp. 2726-2730 ◽  
Author(s):  
Naoya Kawamoto ◽  
Atsushi Masuda ◽  
Naoto Matsuo ◽  
Yasuhiro Seri ◽  
Toshimasa Nishimori ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Excimer Laser Annealing

Reduction of the size of the implanted silver nanoparticles in float glass during excimer laser annealing

1998 ◽  
Vol 136 (4) ◽  
pp. 298-305 ◽  
Author(s):  
A.L Stepanov ◽  
D.E Hole ◽  
A.A Bukharaev ◽  
P.D Townsend ◽  
N.I Nurgazizov
Keyword(s):  
Silver Nanoparticles ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Float Glass ◽  
Excimer Laser Annealing

Heterostructures of GaAs and AlAs on Silicon: X-Ray Analysis and Excimer Laser Annealing

1988 ◽  
Vol 116 ◽  
Author(s):  
A. Georgakilas ◽  
M. Fatemi ◽  
L. Fotiadis ◽  
A. Christou
Keyword(s):  
Molecular Beam Epitaxy ◽  
Dislocation Density ◽  
Excimer Laser ◽  
Molecular Beam ◽  
Laser Annealing ◽  
High Resistivity ◽  
Silicon Substrates ◽  
Excimer Laser Annealing ◽  
X Ray ◽  
High Resistivity Silicon

AbstractOne micron thick AlAs/GaAs structures have been deposited by molecular beam epitaxy onto high resistivity silicon substrates. Subsequent to deposition, it is shown that Excimer laser annealing up to 120mJ/cm2 at 248nm improves the GaAs mobility to approximately 2000cm2 /v-s. Dislocation density, however, did not decrease up to 180mJ/cm2 showing that improvement in transport properties may not be accompanied by an associated decrease in dislocation density at the GaAs/Si interface.

scholarly journals Crystal Growth of Low-Temperature Processed Poly-Si by Excimer Laser Annealing. Dependences of Poly-Si Grain on Energy Density and Shot Number.

Shinku ◽  
2000 ◽  
Vol 43 (12) ◽  
pp. 1120-1125 ◽  
Author(s):  
Naoto MATSUO ◽  
Hisashi ABE ◽  
Naoya KAWAMOTO ◽  
Ryouhei TAGUCHI ◽  
Tomoyuki NOUDA ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Energy Density ◽  
Low Temperature ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Shot Number

Enhancement of On/Off Current Ratio of Poly-Silicon TFT by Selective Laser-Induced Crystallization of Active Layer

1997 ◽  
Vol 471 ◽  
Author(s):  
Jae-Hong Jeon ◽  
Cheol-Min Park ◽  
Hong-Seok Choi ◽  
Cheon-Hong Kim ◽  
Min-Koo Han
Keyword(s):  
Leakage Current ◽  
Excimer Laser ◽  
Active Layer ◽  
Laser Annealing ◽  
Wave Length ◽  
Excimer Laser Annealing ◽  
Current Ratio ◽  
Ito Film ◽  
Conduction Channel ◽  
Induced Crystallization

ABSTRACTWe have proposed the new poly-Si TFT which reduces the leakage current effectively by employing highly resistive a-Si region in the channel. The active layer of proposed device is crystallized selectively by employing excimer laser annealing while the both sides of channel near the source/drain are not recrystallized and remained as a-Si. Unlikely LDD or offset structure, the a-Si region which is designed to reduce the leakage current acts as the conduction channel of carriers under the ON state, so that the ON current is decreased very little. The selectively crystallized active layer can be fabricated by irradiating the excimer laser through ITO film of which transmittance at the wave length of laser is selectively adjusted. In the course of fabricating the proposed device, any additional photo masking step is not necessary and misalign problem is eliminated. The experimental results show that the ON/OFF current ratio of proposed poly-Si TFT is 106 while that of conventional one is 105.

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