Research progress of high mobility germanium based metal oxide semiconductor devices

Acta Physica Sinica ◽

10.7498/aps.64.208501 ◽

2015 ◽

Vol 64 (20) ◽

pp. 208501

Author(s):

An Xia ◽

Huang Ru ◽

Li Zhi-Qiang ◽

Yun Quan-Xin ◽

Lin Meng ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Research Progress

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Gate stack technology for advanced high-mobility Ge-channel metal-oxide-semiconductor devices – Fundamental aspects of germanium oxides and application of plasma nitridation technique for fabrication of scalable oxynitride dielectrics

Current Applied Physics ◽

10.1016/j.cap.2012.04.025 ◽

2012 ◽

Vol 12 ◽

pp. S10-S19 ◽

Author(s):

Heiji Watanabe ◽

Katsuhiro Kutsuki ◽

Atsushi Kasuya ◽

Iori Hideshima ◽

Gaku Okamoto ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Plasma Nitridation

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Fully strained Si0.75Ge0.25 epitaxial films with HfSiO gate dielectrics for high mobility channel metal-oxide semiconductor devices

Microelectronic Engineering ◽

10.1016/j.mee.2008.05.013 ◽

2008 ◽

Vol 85 (8) ◽

pp. 1804-1806 ◽

Author(s):

Jungwoo Oh ◽

Prashant Majhi ◽

Raj Jammy ◽

Raymond Joe ◽

Takuya Sugawara ◽

...

Keyword(s):

Metal Oxide ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

High Mobility ◽

Epitaxial Films ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Mobility Channel

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A Combined Interface and Border Trap Model for High-Mobility Substrate Metal–Oxide–Semiconductor Devices Applied to $\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ and InP Capacitors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2011.2165725 ◽

2011 ◽

Vol 58 (11) ◽

pp. 3890-3897 ◽

Author(s):

Guy Brammertz ◽

Alireza Alian ◽

Dennis Han-Chung Lin ◽

Marc Meuris ◽

Matty Caymax ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Substrate Metal

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Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3125275 ◽

2009 ◽

Vol 27 (3) ◽

pp. 1261

Author(s):

Shu-Tong Chang ◽

Ming-Han Liao ◽

Chang-Chun Lee ◽

Jacky Huang ◽

Wei-Ching Wang ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Stress Engineering

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Effects of barrier layers on device performance of high mobility In0.7Ga0.3As metal-oxide-semiconductor field-effect-transistors

Applied Physics Letters ◽

10.1063/1.3350893 ◽

2010 ◽

Vol 96 (10) ◽

pp. 102101 ◽

Author(s):

Han Zhao ◽

Yen-Ting Chen ◽

Jung Hwan Yum ◽

Yanzhen Wang ◽

Fei Zhou ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Device Performance ◽

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Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.3455110 ◽

2010 ◽

Vol 96 (24) ◽

pp. 242901 ◽

Author(s):

Yi Zhao ◽

Koji Kita ◽

Akira Toriumi

Keyword(s):

Metal Oxide ◽

Thermodynamic Analysis ◽

Moisture Absorption ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Permittivity

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Dry etching of poly-Si/TaN/HfSiON gate stack for advanced complementary metal-oxide-semiconductor devices

Journal of Semiconductors ◽

10.1088/1674-4926/32/7/076001 ◽

2011 ◽

Vol 32 (7) ◽

pp. 076001 ◽

Author(s):

Yongliang Li ◽

Qiuxia Xu

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Dry Etching ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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Fromab initioproperties of the Si-SiO2interface, to electrical characteristics of metal-oxide-semiconductor devices

Journal of Physics Conference Series ◽

10.1088/1742-6596/242/1/012010 ◽

2010 ◽

Vol 242 ◽

pp. 012010 ◽

Author(s):

S Markov ◽

P Sushko ◽

C Fiegna ◽

E Sangiorgi ◽

A Shluger ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Studies of interface states of silicon metal-oxide-semiconductor devices by dynamic conductance and noise measurements and effects of bias-temperature stresses

Thin Solid Films ◽

10.1016/0040-6090(82)90138-9 ◽

1982 ◽

Vol 93 (3-4) ◽

pp. 321-330 ◽

Author(s):

K.L. Ngai ◽

S.T. Liu

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Temperature Stresses ◽

Noise Measurements ◽

Dynamic Conductance

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Quantum mechanical study of trapped charge relaxation characteristics in metal-oxide-semiconductor devices

Proceedings of IEEE. IEEE Region 10 Conference. TENCON 99. 'Multimedia Technology for Asia-Pacific Information Infrastructure' (Cat. No.99CH37030) ◽

10.1109/tencon.1999.818624 ◽

2003 ◽

Author(s):

Q.D. Mohd Khosru ◽

Md. Nasir Uddin ◽

M. Rezwan Khan

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Charge Relaxation ◽

Mechanical Study ◽

Quantum Mechanical Study ◽

Relaxation Characteristics ◽

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