Impact of diffusionless anneal using dynamic surface anneal on the electrical properties of a high-k/metal gate stack in metal-oxide-semiconductor devices

2011 ◽  
Vol 98 (12) ◽  
pp. 123506 ◽  
Author(s):  
Changhwan Choi ◽  
Kam-Leung Lee ◽  
Vijay Narayanan
Keyword(s):  
Electrical Properties ◽  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Metal Gate ◽  
Gate Stack ◽  
Dynamic Surface ◽  
High K

In-Situ Deposition of High-k Gate Stack on InGaAs and GaAs for Metal-Oxide-Semiconductor Devices with Low Equivalent Oxide Thickness

2019 ◽  
Vol 11 (4) ◽  
pp. 431-439 ◽  
Author(s):  
Rama Kambhampati ◽  
Sergei Koveshnikov ◽  
Vadim Tokranov ◽  
M. Yakimov ◽  
R Moore ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Oxide Thickness ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Equivalent Oxide Thickness ◽  
Gate Stack ◽  
In Situ Deposition ◽  
High K
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