Improvement in electrical and photovoltaic properties of a-Si/c-Si heterojunction with slanted nano-columnar amorphous silicon thin films for photovoltaic applications

The structural and optical properties of amorphous silicon (a-Si) and Al-dispersed amorphous silicon (a-Si:Al) thin films irradiated by femtosecond (fs) laser at various energy densities are investigated comparatively in this article. It is found that there is an uneven crystallization in both amorphous thin films by means of optical microscopy and laser Raman spectroscopy respectively. The crystallization in each pulse spot area is gradually weakened from the center to the edge along with the energy dispersion of laser irradiation. The laser induced crystallization in a-Si thin films begins early and develops more extensively compared to that in a-Si:Al thin films, and Al nanoparticles inhibit somehow the crystallization of a-Si in a-Si:Al thin films.

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Device Relevant Doped Amorphous Silicon Thin Films by Inductively Coupled Plasma Enhanced Chemical Vapor Deposition

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) ◽

10.1109/pvsc.2018.8548298 ◽

2018 ◽

Author(s):

Boon Heng TEO ◽

Jin LIU ◽

Jia GE ◽

Delio PEREZ ◽

Edwin CARMONA ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Inductively Coupled Plasma ◽

Chemical Vapor ◽

Inductively Coupled ◽

Silicon Thin Films

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Polycrystalline silicon thin films by aluminum induced crystallization of amorphous silicon

Applied Surface Science ◽

10.1016/j.apsusc.2012.09.019 ◽

2013 ◽

Vol 264 ◽

pp. 11-16 ◽

Cited By ~ 19

Author(s):

T. Wang ◽

H. Yan ◽

M. Zhang ◽

X. Song ◽

Q. Pan ◽

...

Keyword(s):

Thin Films ◽

Amorphous Silicon ◽

Polycrystalline Silicon ◽

Silicon Thin Films ◽

Induced Crystallization ◽

Aluminum Induced Crystallization

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Crystallization of Amorphous Silicon Thin Films by Microwave Heating

MRS Proceedings ◽

10.1557/opl.2014.920 ◽

2014 ◽

Vol 1666 ◽

Cited By ~ 1

Author(s):

Tomohiko Nakamura ◽

Shinya Yoshidomi ◽

Masahiko Hasumi ◽

Toshiyuki Sameshima ◽

Tomohisa Mizuno

Keyword(s):

Thin Films ◽

Heat Treatment ◽

Amorphous Silicon ◽

Microwave Heating ◽

Volume Ratio ◽

Heated Sample ◽

Silicon Thin Films ◽

Scattering Spectra ◽

Raman Scattering Spectra ◽

Si Films

ABSTRACTWe report crystallization of amorphous silicon (a-Si) thin films and improvement of thin film transistors (TFTs) characteristics using 2.45 GHz microwave heating assisted with carbon powders. Undoped 50-nm-thick a-Si films were formed on quartz substrates and heated by microwave irradiation for 2, 3, and 4 min. Raman scattering spectra revealed that the crystalline volume ratio increased to 0.42 for the 4-min heated sample. The dark and photo electrical conductivities measured by Air mass 1.5 at 100 mW/cm2 were 2.6x10-6 and 5.2x10-6 S/cm in the case of 4-min microwave heating followed by 1.3x106-Pa-H2O vapor heat treatment at 260°C for 3 h. N channel polycrystalline silicon TFTs characteristics were improved by the combination of microwave heating with high-pressure H2O vapor heat treatment. The threshold voltage decreased from 5.3 to 4.2 V and the effective carrier mobility increased from 18 to 25 cm2/Vs.

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