High yield production of semiconducting p-type single-walled carbon nanotube thin-film transistors on a flexible polyimide substrate by tuning the density of ferritin catalysts

Carbon ◽  
2011 ◽  
Vol 49 (7) ◽  
pp. 2492-2498 ◽  
Author(s):  
Jaehyun Park ◽  
Jangyeol Yoon ◽  
Seong Jun Kang ◽  
Gyu-Tae Kim ◽  
Jeong Sook Ha
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Thin Film Transistors ◽  
High Yield ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Polyimide Substrate ◽  
Yield Production ◽  
P Type ◽  
High Yield Production

Highly conductive and transparent single-walled carbon nanotube thin films from ethanol by floating catalyst chemical vapor deposition

Nanoscale ◽  
2017 ◽  
Vol 9 (44) ◽  
pp. 17601-17609 ◽  
Author(s):  
Er-Xiong Ding ◽  
Hua Jiang ◽  
Qiang Zhang ◽  
Ying Tian ◽  
Patrik Laiho ◽  
...  
Keyword(s):  
Thin Films ◽  
Carbon Nanotube ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Yield ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Yield Production ◽  
Catalyst Chemical Vapor Deposition ◽  
High Yield Production

We report the high yield production of highly conductive and transparent single-walled carbon nanotube films from ethanol by the FCCVD method.

scholarly journals Tuning the electrical performance and bias stability of a semiconducting SWCNT thin film transistor with an atomic layer deposited AlZrOx composite

RSC Advances ◽  
2017 ◽  
Vol 7 (83) ◽  
pp. 52517-52523 ◽  
Author(s):  
Jun Li ◽  
Chuan-Xin Huang ◽  
Jian-Hua Zhang
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Thin Film Transistors ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Electrical Performance ◽  
Solution Processed ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Bias Stability

Solution-processed semiconducting single-walled carbon nanotube (s-SWCNT) thin film transistors (TFTs) based on different atomic layer deposited AlZrOx insulators are fabricated and characterized.

Printable carbon nanotube-based elastic conductors for fully-printed sub-1 V stretchable electrolyte-gated transistors and inverters

2020 ◽  
Vol 8 (11) ◽  
pp. 3639-3645
Author(s):  
Kyung Gook Cho ◽  
Yeong Kwan Kwon ◽  
Seong Su Jang ◽  
Kyoung Hwan Seol ◽  
Jong Hyuk Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Thin Film Transistors ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon

Single-walled carbon nanotube (SWCNT)-based hybrid electrodes are promising for fully-printed stretchable thin-film transistors and inverters.

Fine Patterning of Inkjet-Printed Single-Walled Carbon-Nanotube Thin-Film Transistors

2012 ◽  
Vol 51 (6S) ◽  
pp. 06FD15 ◽  
Author(s):  
Yuki Nobusa ◽  
Yuki Takagi ◽  
Shota Gocho ◽  
Satoki Matsuzaki ◽  
Kazuhiro Yanagi ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Thin Film Transistors ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon

Effect of SOCl2 doping on electronic properties of single-walled carbon nanotube thin film transistors

2011 ◽  
Vol 248 (11) ◽  
pp. 2668-2671 ◽  
Author(s):  
D. H. Kim ◽  
J. K. Lee ◽  
J. H. Huh ◽  
Y. H. Kim ◽  
G. T. Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Electronic Properties ◽  
Thin Film Transistors ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon

Electrical Instability of Single-Walled Carbon Nanotube Network Thin-Film Transistors

2021 ◽  
Vol 21 (7) ◽  
pp. 3938-3942
Author(s):  
Ji-Hoon Choi ◽  
Hyeonju Lee ◽  
Jin-Hyuk Bae ◽  
Jaehoon Park
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Thin Film Transistors ◽  
Drain Current ◽  
Structural Defects ◽  
Water Molecules ◽  
Single Walled Carbon Nanotube ◽  
Atmospheric Air ◽  
Single Walled Carbon ◽  
Electrical Instability

The electrical instability of single-walled carbon nanotube (SWCNT) network-based thin-film transistors is investigated in atmospheric air and under vacuum. Atomic force microscopy images show that the nanotube bundles form X-type and Y-type nodes in the SWCNT-networkfilm. The Raman spectrum reveals that the structural defects in the SWCNTs are negligible. The fabricated SWCNT-network TFTs operate in a p-channel accumulation mode both in air and under vacuum. In contrast, TFTs exposed to atmospheric air environment exhibit lower drain currents and larger hysteresis compared with the vacuum environment case. An analysis of the time-dependent characteristic degradation of the SWCNT-network TFTs also demonstrates that the initial decay of the drain current in atmospheric air environment is more acute than that under vacuum. These results can be explained in terms of the hole-trapping behavior of the water molecules near the nanotubes or at the SWCNT/dielectric interface as well as the compensation effect of the electrons donated by water molecules with free holes in the SWCNT-networkfilm.

scholarly journals Electronically Pure Single Chirality Semiconducting Single-Walled Carbon Nanotube for Large Scale Electronic Devices

MRS Advances ◽  
2017 ◽  
Vol 2 (02) ◽  
pp. 83-88
Author(s):  
Huaping Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Carbon Nanotube ◽  
Large Scale ◽  
Solution Process ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Schottky Type ◽  
P Type ◽  
Metallic Impurities

Abstract Carbon nanotube thin film transistors (TFTs) with characteristics resembling those of TFTs constructed on amorphous silicon, low-temperature polycrystalline silicon and metal oxides were fabricated on (6,5) single chirality single-walled carbon nanotube (SWCNT) thin film deposited from electronically pure semiconducting (6,5) single chirality single-walled carbon nanotube (SWCNT) ink. This ink was extracted in industrial scale from raw SWCNTs produced using high pressure carbon monoxide conversion, and deposited on pretreated substrates to form uniform and consistent (6,5) HiPCO SWCNT thin film using solution process. The (6,5) HiPCO SWCNT thin films were characterized as pure semiconductor without metallic impurities showing classic nonlinear current-bias curves in Schottky-type diodes. Both N-type and P-type (6,5) HiPCO SWCNT TFTs were fabricated with femto Ampere off-current and ION/IOFF ratio of 108 by depositing SiNx and HfO2 dielectrics on the top of (6,5) HiPCO SWCNT thin films, respectively. The (6,5) HiPCO SWCNT inverter with voltage gain of 52 was also demonstrated by wire-bonding one P-type HiPCO SWCNT TFT to one N-type HiPCO SWCNT TFT.

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