Preparation of CaCu3Ti4O12 ceramics with low dielectric loss and giant dielectric constant by the sol–gel technique

2013 ◽  
Vol 39 (7) ◽  
pp. 7879-7889 ◽  
Author(s):  
Yanyan Li ◽  
Pengfei Liang ◽  
Xiaolian Chao ◽  
Zupei Yang
Keyword(s):  
Dielectric Constant ◽  
Dielectric Loss ◽  
Sol Gel ◽  
Low Dielectric ◽  
Giant Dielectric ◽  
Gel Technique ◽  
Giant Dielectric Constant

scholarly journals Colossal dielectric constant of NaNbO3 doped BaTiO3 ceramics

2016 ◽  
Vol 34 (2) ◽  
pp. 322-329 ◽  
Author(s):  
Wan Q. Cao ◽  
Ling F. Xu ◽  
Mukhlis M. Ismail ◽  
Li L. Huang
Keyword(s):  
Dielectric Constant ◽  
Dielectric Loss ◽  
Traditional Approach ◽  
Temperature Stability ◽  
Bound State ◽  
High Energy ◽  
Low Dielectric ◽  
Giant Dielectric ◽  
Giant Dielectric Constant ◽  
High Dielectric

AbstractBaTiO3 ceramics doped with 0.40 mol% NaNbO3 were prepared using a traditional approach by sintering at temperature of 1250 °C to 1290 °C. The prepared ceramics was characterized by very good dielectric properties, such as high dielectric constant (1.5 × 105), low dielectric loss (0.1), and good dielectric temperature stability in the −40 °C to 100 °C range for the sample sintered below 1270 °C. The dielectric characteristics obtained with XPS confirmed that Ti4+ ions remain in the state without any change. The huge increase in dielectric constant in NaNbO3 doped BaTiO3 samples occurs when large amount of Ba2+ ions are excited to a high energy bound state of Ba2+ − e or Ba+ to create electron hopping conduction. For samples with the content of NaNbO3 higher than 0.40 mol%, or sintering temperature higher than 1280 °C, compensation effect is dominated by cation vacancies with sharply decreasing dielectric constant and increased dielectric loss. The polaron effect is used to explain the relevant mechanism of giant dielectric constant appearing in the ferroelectric phase.

Dielectric Properties of Sol - Gel Silica Glasses

1986 ◽  
Vol 72 ◽  
Author(s):  
G. V. Chandrashekhar ◽  
M. W. Shafer
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Elemental Carbon ◽  
Sol Gel ◽  
Fused Silica ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Silica Glasses ◽  
Low Dielectric ◽  
Gel Technique

AbstractDielectric properties have been measured for a series of porous and fully densified silica glasses, prepared by the sol-gel technique starting from Si-methoxide or Si-fume. The results for the partially densified glasses do not show any preferred orientation for porosity. When fully densified (˜2.25 gms/cc) without any prior treatment of the gels, they have dielectric constants of ≥ 6.5 and loss factors of 0.002 at 1 MHz, compared to values of 3.8 and <0.001 for commercial fused silica. There is no corresponding anomaly in the d.c. resistivity. Elemental carbon present to the extent of 400–500 ppm is likely to be the main cause for this enhanced dielectric constant. Extensive cleaning of the gels prior to densification to remove this carbon were not completely successful pointing to the difficulty in preparing high purity, low dielectric constant glasses via the organic sol-gel route at least in the bulk form.

Nanocrystalline CaCu3Ti4O12 powder by PVA sol–gel route: synthesis, characterization and its giant dielectric constant

2009 ◽  
Vol 96 (3) ◽  
pp. 595-602 ◽  
Author(s):  
Chivalrat Masingboon ◽  
Prasit Thongbai ◽  
Santi Maensiri ◽  
Teerapon Yamwong
Keyword(s):  
Dielectric Constant ◽  
Sol Gel ◽  
Giant Dielectric ◽  
Giant Dielectric Constant

Sol–gel synthesized pure CaCu3Ti4O12 with very low dielectric loss and high dielectric constant

2015 ◽  
Vol 41 (10) ◽  
pp. 13486-13492 ◽  
Author(s):  
Li Sun ◽  
Zhenduo Wang ◽  
Yongjie Shi ◽  
Ensi Cao ◽  
Yongjia Zhang ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Loss ◽  
High Dielectric Constant ◽  
Sol Gel ◽  
Low Dielectric ◽  
High Dielectric

The Super Capacitor with Nanosic Film Electrode

2013 ◽  
Vol 873 ◽  
pp. 417-419
Author(s):  
Xiu Xia Zhang ◽  
Chao Hui Li ◽  
Xin Hua Huang ◽  
Xiu Li Lou ◽  
Jun Xia Wen ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Loss ◽  
Sol Gel ◽  
Film Electrode ◽  
Sintering Process ◽  
Super Capacitor ◽  
Good Thermal Stability ◽  
Low Dielectric ◽  
Nanocrystalline Graphite ◽  
Sic Film

Nano-SiC was mixed with nanocrystalline graphite and ethylic cellulose to paste. In order to fabricate Nano-SiC film electrode of super capacitor, a series of sol-gel Nano-SiC film with different proportions are designed test intentionally. Nano-SiC film was fixed on metal substrates using three-steps sintering process. The perovskite structure CaCu3Ti4O12 (of CCTO) ceramics has giant permittivity, low dielectric loss, good thermal stability and dielectric constant in a wide temperature range has very broad application prospects in microelectronics. In this paper, the solid state reaction sintering can be divided into two categories: sintering at 1373K at different times; first heating to 1423K then immediately cooling to 1373K and keeping for different times. The CCTO ceramic dielectric constant and dielectric loss decreased with frequency rises. A super capacitor was designed based on CCTO ceramics dielectric and Nano-SiC film electrode.

Giant dielectric constant in Al2O3/TiO2 multilayer films synthesized by atomic layer deposition

MRS Advances ◽  
2018 ◽  
Vol 3 (23) ◽  
pp. 1285-1290
Author(s):  
Takuji Tsujita ◽  
Yukihiro Morita ◽  
Mikihiko Nishitani
Keyword(s):  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Multilayer Films ◽  
Low Dielectric ◽  
Oxygen Defects ◽  
Giant Dielectric ◽  
Layer Deposition ◽  
Giant Dielectric Constant ◽  
The Relationship

ABSTRACTMultilayer films formed from Al2O3 and TiO2 by atomic layer deposition were systematically studied. The relationship between the electrical characteristics of the films and the type of oxidizer used for the Al2O3 layers was investigated. The results indicated that oxygen defects in TiO2 layer and a highly insulating Al2O3 layer are necessary for realizing a giant dielectric constant and a low dielectric loss. A high electrical resistance of 1.7×108 Ω / diameter of 1 mm and a dielectric constant of 1140 were achieved at 100 Hz by suitable choice of oxidizer for the Al2O3 layer.

scholarly journals Colossal Permittivity and Multiple Effects in (Zn + Ta) co-doped TiO2 Ceramics

2020 ◽  
Author(s):  
Jiangtao Fan ◽  
TianTian Yang ◽  
Zhenzhu Cao
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Low Dielectric ◽  
Giant Dielectric ◽  
High Dielectric Permittivity ◽  
Colossal Permittivity ◽  
Giant Dielectric Constant ◽  
High Dielectric ◽  
Device Miniaturization ◽  
Co Doped

Abstract The search for giant dielectric constant materials is imperative because of their potential for important applications for the areas of device miniaturization and energy storage. In this work, we report a (Zn + Ta) co-doped TiO2 (ZTTO) ceramics that manifests high dielectric permittivity (>104) and low dielectric loss. This dielectric property shows a high stability in wide temperature range (25-200℃) and frequency range(20-106Hz). The crystalline structure, microstructure and dielectric properties of ZTTO ceramics were systematically investigated. XPS, Impedance spectroscopy and frequency dependent dielectric constant under DC bias results reveal that the colossal dielectric properties of (Zn2+1/3Ta5+2/3)xTi1-xO2 ceramics were mainly caused by electron-pinned defect-dipoles (EPDD) model, internal barrier layer capacitance (IBLC) effect and electrode effect. This work would provide a guidance to further researching the colossal permittivity CP materials.

Sign in / Sign up

Export Citation Format

Share Document