Band gap engineering in Zn(1−x)CdxO and Zn(1−x)MgxO thin films by RF sputtering

The influence of substrate temperature on the UV-Visible-near-IR optical properties, namely the band gap, the Urbach energy and the refractive index of NiO thin films deposited by RF sputtering has been investigated. The optical band gap of thin films showed the blue-shift in the transmission spectra with increase in the substrate temperature which is related to variation in carrier concentration of the deposited films. Urbach energy (EU) values indicate that the films deposited at 400 oC substrate temperature show least structural disorder. The refractive index of the films is found to decrease continuously with increase in the substrate temperature at all photon energies in the visible and near-IR region, and is attributed to the decreasing packing density of the films. Introduction

Download Full-text

Band-gap engineering, conduction and valence band positions of thermally evaporated amorphous Ge15-x Sbx Se50 Te35 thin films: Influences of Sb upon some optical characterizations and physical parameters

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2019.05.252 ◽

2019 ◽

Vol 798 ◽

pp. 750-763 ◽

Cited By ~ 44

Author(s):

Ahmed Saeed Hassanien ◽

Ishu Sharma

Keyword(s):

Thin Films ◽

Band Gap ◽

Valence Band ◽

Physical Parameters ◽

Band Gap Engineering

Download Full-text

Band gap engineering in lead sulphur selenide (PbS1−x Se x ) thin films synthesized by chemical bath deposition method

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-016-5874-6 ◽

2016 ◽

Vol 28 (3) ◽

pp. 2893-2900 ◽

Cited By ~ 3

Author(s):

Fekadu Gashaw Hone ◽

Francis Kofi Ampong ◽

Robert Kwame Nkum ◽

Francis Boakye

Keyword(s):

Thin Films ◽

Band Gap ◽

Chemical Bath Deposition ◽

Chemical Bath Deposition Method ◽

Deposition Method ◽

Band Gap Engineering

Download Full-text

Effects of the Argon Pressure on the Optical Band Gap of Zinc Oxide Thin Films Grown by Nonreactive RF Sputtering

Advances in Condensed Matter Physics ◽

10.1155/2013/970976 ◽

2013 ◽

Vol 2013 ◽

pp. 1-6 ◽

Cited By ~ 8

Author(s):

M. Acosta ◽

I. Riech ◽

E. Martín-Tovar

Keyword(s):

Thin Films ◽

Zinc Oxide ◽

Band Gap ◽

Room Temperature ◽

Optical Band Gap ◽

Rf Sputtering ◽

Argon Pressure ◽

Band Gaps ◽

Zno Thin Films ◽

Optical Band Gaps

Zinc oxide (ZnO) thin films were grown by nonreactive RF sputtering at room temperature under varying argon pressures (PAr). Their optical band gap was found to increase from 3.58 to 4.34 eV when the argon pressure increases from 2.67 to 10.66 Pa. After annealing at 200°C and 500°C, optical band gaps decrease considerably. The observed widening of the band gap with increasingPArcan be understood as being a consequence of the poorer crystallinity of films grown at higher pressures. Measurements of morphological and electrical properties of these films correlate well with this picture. Our main aim is to understand the effects ofPAron several physical properties of the films, and most importantly on its optical band gap.

Download Full-text