Effects of the Argon Pressure on the Optical Band Gap of Zinc Oxide Thin Films Grown by Nonreactive RF Sputtering

Zinc oxide (ZnO) thin films were grown by nonreactive RF sputtering at room temperature under varying argon pressures (PAr). Their optical band gap was found to increase from 3.58 to 4.34 eV when the argon pressure increases from 2.67 to 10.66 Pa. After annealing at 200°C and 500°C, optical band gaps decrease considerably. The observed widening of the band gap with increasingPArcan be understood as being a consequence of the poorer crystallinity of films grown at higher pressures. Measurements of morphological and electrical properties of these films correlate well with this picture. Our main aim is to understand the effects ofPAron several physical properties of the films, and most importantly on its optical band gap.

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Variation of optical band gap in anodically grown nanocrystalline ZnO thin films at room temperature—effect of electrolyte concentrations

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-009-9852-0 ◽

2009 ◽

Vol 20 (12) ◽

pp. 1203-1207 ◽

Cited By ~ 10

Author(s):

Palash K. Basu ◽

E. Bontempi ◽

S. Maji ◽

H. Saha ◽

Sukumar Basu

Keyword(s):

Thin Films ◽

Temperature Effect ◽

Band Gap ◽

Room Temperature ◽

Optical Band Gap ◽

Zno Thin Films

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Effects of Different Thermal Treatment on Optical Properties and Microstructure of ZnO Thin Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.197-198.1766 ◽

2011 ◽

Vol 197-198 ◽

pp. 1766-1770 ◽

Cited By ~ 1

Author(s):

Dong Ping Zhang ◽

Ping Fan ◽

Zhuang Hao Zheng ◽

Li Li Ru ◽

Jian Jun Huang ◽

...

Keyword(s):

Thin Films ◽

Optical Properties ◽

Band Gap ◽

Constant Temperature ◽

Room Temperature ◽

Optical Band Gap ◽

The Other ◽

Zno Thin Films ◽

Zno Films ◽

Dc Reactive Magnetron Sputtering

ZnO thin films were prepared by DC reactive magnetron sputtering at room temperature. Two of them were annealed with different modes under vacuum condition. One was annealed with constant temperature of 300°C ; the other was annealed with temperature rising step by step from room temperature to 300°C . By comparing the microstructure and optical properties of the as-grown and annealed samples, the effects of different annealing modes on ZnO films performances were revealed. The experiment results investigated that the sample annealed with constant temperature of 300°C has the high grain size and surface roughness. Both of the two annealing modes could release the intrinsic stresses to some degree. The optical band gap of the samples narrowed after annealing, and the two annealed samples have almost the same band gap. Strong green emissions are observed for all the samples, but the emission intensity decreased of the sample annealed with the temperature rising step by step compared with that of other samples.

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Controlling room temperature ferromagnetism and band gap in ZnO nanostructured thin films by varying angle of implantation

RSC Advances ◽

10.1039/c7ra10615g ◽

2018 ◽

Vol 8 (12) ◽

pp. 6278-6287 ◽

Cited By ~ 8

Author(s):

Rajesh V. Hariwal ◽

Hitendra K. Malik ◽

Ambika Negi ◽

Asokan Kandasami

Keyword(s):

Thin Films ◽

Surface Roughness ◽

Band Gap ◽

Room Temperature ◽

Optical Band Gap ◽

Room Temperature Ferromagnetism ◽

Host Lattice ◽

Zno Thin Films ◽

Nanostructured Thin Films

The defects in the host lattice play a major role in tuning the surface roughness, optical band gap and the room temperature ferromagnetism of ZnO thin films.

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Blue shift in the optical band gap of amorphous Hf–In–Zn–O thin films deposited by RF sputtering

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2012.02.091 ◽

2012 ◽

Vol 525 ◽

pp. 172-174 ◽

Cited By ~ 7

Author(s):

Anup Thakur ◽

Se-Jun Kang ◽

Jae Yoon Baik ◽

Hanbyeol Yoo ◽

Ik-Jae Lee ◽

...

Keyword(s):

Thin Films ◽

Band Gap ◽

Optical Band Gap ◽

Rf Sputtering ◽

Blue Shift

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Chemical state analysis, optical band gap, and photocatalytic decolorization of cobalt-doped ZnO nanospherical thin films by DC/RF sputtering technique

Optik ◽

10.1016/j.ijleo.2018.02.073 ◽

2018 ◽

Vol 164 ◽

pp. 143-154 ◽

Cited By ~ 6

Author(s):

Asim Jilani ◽

M.Sh. Abdel-wahab ◽

H.Y. Zahran ◽

I.S. Yahia ◽

Attieh A. Al-Ghamdi ◽

...

Keyword(s):

Thin Films ◽

Band Gap ◽

Optical Band Gap ◽

Rf Sputtering ◽

Chemical State ◽

Photocatalytic Decolorization ◽

Doped Zno ◽

State Analysis

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Tuning NBE emission and optical band gap of nanocrystalline ZnO thin films using Fe dopant

Materials Today Proceedings ◽

10.1016/j.matpr.2017.10.025 ◽

2018 ◽

Vol 5 (3) ◽

pp. 9089-9093 ◽

Cited By ~ 5

Author(s):

Nishant Kumar ◽

Anu Katiyar ◽

Anchal Srivastava

Keyword(s):

Thin Films ◽

Band Gap ◽

Optical Band Gap ◽

Zno Thin Films

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STRUCTURAL AND OPTICAL PROPERTIES OF UNDOPED AND SILVER, LITHIUM AND COBALT-DOPED ZnO THIN FILMS

Surface Review and Letters ◽

10.1142/s0218625x19501385 ◽

2019 ◽

Vol 27 (04) ◽

pp. 1950138

Author(s):

FATMA MEYDANERİ TEZEL ◽

İ. AFŞIN KARİPER

Keyword(s):

Thin Films ◽

Band Gap ◽

Optical Band Gap ◽

Optical Transmittance ◽

Refraction Index ◽

Zno Thin Films ◽

High Temperature Furnace ◽

Doped Zno ◽

Ray Patterns ◽

Temperature Furnace

Undoped and silver, lithium and cobalt-doped ZnO thin films have been successfully deposited on glass by chemical bath deposition (CBD). The reaction temperature was 50∘C and the films were annealed at 400∘C for 4[Formula: see text]h in a high temperature furnace. UV/VIS spectrum was used to determine optical transmittance, optical band gap ([Formula: see text] and absorbance values of Ag:ZnO, Co:ZnO, Li:ZnO and undoped ZnO thin films. Optical band gap ([Formula: see text] and absorbance values of undoped ZnO, Ag:ZnO, Co:ZnO and Li:ZnO thin films were found as 0.0158, 0.0064, 0.2638, 0.0956 and 3.24, 3.13, 3.27, 2.96 eV, respectively. Extinction coefficients and refraction indexes of the films were found to be 0.0096, 0.0038, 0.0068, 0.019 (extinction coefficient) and 1.26, 1.14, 1.66, 2.33 (refraction index), respectively. X-ray patterns of undoped ZnO, Ag:ZnO, Co:ZnO and Li:ZnO thin films were confirmed as amorphous.

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Comment on “Low temperature synthesis wide optical band gap Al and (Al, Na) co-doped ZnO thin films”

Applied Surface Science ◽

10.1016/j.apsusc.2011.05.036 ◽

2011 ◽

Vol 257 (20) ◽

pp. 8752-8753 ◽

Cited By ~ 6

Author(s):

Mingsong Wang

Keyword(s):

Thin Films ◽

Low Temperature ◽

Band Gap ◽

Optical Band Gap ◽

Zno Thin Films ◽

Low Temperature Synthesis ◽

Temperature Synthesis ◽

Doped Zno ◽

Co Doped

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SPECTROSCOPIC ELLIPSOMETRY STUDIES ON ZINC OXIDE THIN FILMS DEPOSITED BY SOL–GEL METHOD WITH VARIOUS PRECURSOR CONCENTRATIONS

Surface Review and Letters ◽

10.1142/s0218625x18501585 ◽

2019 ◽

Vol 26 (03) ◽

pp. 1850158 ◽

Cited By ~ 3

Author(s):

MARYAM MOTALLEBI AGHGONBAD ◽

HASSAN SEDGHI

Keyword(s):

Thin Films ◽

Zinc Oxide ◽

Optical Properties ◽

Spectroscopic Ellipsometry ◽

Zinc Acetate ◽

Optical Band Gap ◽

Zinc Acetate Dihydrate ◽

Sol Gel ◽

Zno Thin Films ◽

Acetate Dihydrate

Zinc Oxide thin films were deposited on glass substrates by sol–gel spin coating method. Zinc acetate dihydrate, 2-methoxyethanol and monoethanolamine were used as precursor, solvent and stabilizer, respectively. Zinc acetate dihydrate was used with different molar concentrations of 0.15, 0.25 and 0.5 M. Optical properties of ZnO thin films such as dielectric constants, absorption coefficient, Urbach energy and optical band gap energy were calculated by spectroscopic ellipsometry (SE) method. The effect of zinc acetate concentration on optical properties of ZnO thin films is investigated. ZnO thin film with Zn concentration of 0.25 M had the highest optical band gap. Wemple DiDomenico oscillator model was used for calculation of the energy of effective dispersion oscillator, the dispersion energy, the high frequency dielectric constant, the long wavelength refractive index and the free carrier concentration.

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