Novel BiAlO3 dielectric thin films with high energy density

ABSTRACTPoly(chloro-p- Xylene) or Parylene –C thin films are particularly attractive for dielectric as well as biomedical applications. In the current work the dielectric properties of Parylene-C thin films are investigated to form laminar composites with oxide thin films for high energy density pulsed power capacitors. Parylene-C thin films were synthesized by pyrolytic vapor decomposition polymerization of dichloro-di(p-Xylene) monomer. Annealing of films at 225°C has shown to enhance crystallinity of film. Conduction in Parylene-C thin films appears to be bulk-controlled with the hopping charges contributing to leakage current. The barrier height of 0.89eV and hopping distance of 2 - 2.5nm are physically plausible and similar to previously reported values in polymer literature.

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Flexible high energy density capacitors using La-doped PbZrO3 anti-ferroelectric thin films

Applied Physics Letters ◽

10.1063/1.5018003 ◽

2018 ◽

Vol 112 (9) ◽

pp. 092901 ◽

Cited By ~ 27

Author(s):

Hye Ji Lee ◽

Sung Sik Won ◽

Kyung Ho Cho ◽

Chung Kyu Han ◽

Nicholas Mostovych ◽

...

Keyword(s):

Thin Films ◽

Energy Density ◽

High Energy ◽

Ferroelectric Thin Films ◽

High Energy Density ◽

La Doped

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Characteristics of (Ti,Ta)N thin films prepared by using pulsed high energy density plasma

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/40/14/018 ◽

2007 ◽

Vol 40 (14) ◽

pp. 4228-4233 ◽

Cited By ~ 11

Author(s):

Wenran Feng ◽

Guangliang Chen ◽

Li Li ◽

Guohua Lv ◽

Xianhui Zhang ◽

...

Keyword(s):

Thin Films ◽

Energy Density ◽

High Energy ◽

High Energy Density ◽

Density Plasma

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High energy density metal-insulator-metal capacitors with Ba[(Ni[sub 1∕2],W[sub 1∕2])[sub 0.1]Ti[sub 0.9]]O[sub 3] thin films

Applied Physics Letters ◽

10.1063/1.2828700 ◽

2008 ◽

Vol 92 (1) ◽

pp. 012903 ◽

Cited By ~ 29

Author(s):

N. K. Karan ◽

J. J. Saavedra-Arias ◽

M. Perez ◽

R. Thomas ◽

R. S. Katiyar

Keyword(s):

Thin Films ◽

Energy Density ◽

High Energy ◽

High Energy Density ◽

Metal Insulator ◽

Metal Insulator Metal

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Achieved High Energy Density and Excellent Thermal Stability in (1-x)(Bi0.5Na0.5)0.94Ba0.06TiO3-xBi(Mg0.5Ti0.5)O3 Relaxor Ferroelectric Thin Films

10.21203/rs.3.rs-255761/v1 ◽

2021 ◽

Author(s):

Hao Yan ◽

Baijie Song ◽

Kun Zhu ◽

Liuxue Xu ◽

Bo Shen ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Energy Storage ◽

Energy Density ◽

High Energy ◽

High Energy Density ◽

Lead Free ◽

Relaxor Behavior ◽

Moderate Amount ◽

Excellent Thermal Stability

Abstract In this work, lead-free (1-x)(Bi0.5Na0.5)0.94Ba0.06TiO3-xBi(Mg0.5Ti0.5)O3 (abbreviated as BNBT-xBMT, x = 0.3, 0.4, 0.5 and 0.6) thin films were prepared on Pt/Ti/SiO2/Si substrates using sol-gel method. The microstructures, dielectric and energy storage properties were investigated. The results showed that the addition of BMT disrupted the long-range ferroelectric order and enhanced the relaxor behavior of BNBT-xBMT thin films. In addition, the leakage current density of thin films was also reduced by the doping of moderate amount of BMT. A high recoverable energy density of 34.36 J/cm3 with an efficiency of 56.63% was achieved in the BNBT-0.5BMT thin film under the electric field of 2149 kV/cm. Furthermore, BNBT-0.5BMT thin film exhibited superior stability in the temperature range of 30°C − 145°C and frequency range of 500 Hz − 5 kHz, as well as long-term fatigue durability after 1 × 105 cycles. These results suggest that BNBT-0.5BMT thin film may be a promising material for lead-free dielectric energy storage applications.

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