Enhanced thermoelectric performance of BiSe by Sn doping and ball milling

2021 ◽  
Author(s):  
Wei Lu ◽  
Xiaofang Lai ◽  
Qiulin Liu ◽  
Zimin He ◽  
Huaizhou Zhao ◽  
...  
Keyword(s):  
Ball Milling ◽  
Thermoelectric Performance ◽  
Sn Doping

Ultra-low thermal conductivity and high thermoelectric performance realized in a Cu3SbSe4 based system

2021 ◽  
Vol 5 (1) ◽  
pp. 324-332
Author(s):  
J. M. Li ◽  
H. W. Ming ◽  
B. L. Zhang ◽  
C. J. Song ◽  
L. Wang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Thermoelectric Performance ◽  
Low Thermal Conductivity ◽  
Sn Doping ◽  
Temperature Range ◽  
System P

Cu3SbSe4-Based materials were fabricated through Sn-doping and AgSb0.98Ge0.02Se2 incorporation and their thermoelectric properties were investigated in the temperature range from 300 K to 675 K.

Effects of Bi2Se3Amount in Thermoelectric Performance of Bi2(TeSe)3Materials Fabricated by High-Energy Ball Milling

2016 ◽  
Vol 13 (4) ◽  
pp. 711-717 ◽  
Author(s):  
Pradip Rimal ◽  
Seung Tek Han ◽  
Soon-Jik Hong ◽  
Hyo-Seob Kim ◽  
Kuk Young Cho ◽  
...  
Keyword(s):  
Ball Milling ◽  
High Energy ◽  
High Energy Ball Milling ◽  
Thermoelectric Performance ◽  
Energy Ball

scholarly journals SnSe + Ag2Se composite engineering with ball milling for enhanced thermoelectric performance

Rare Metals ◽  
2017 ◽  
Vol 37 (4) ◽  
pp. 333-342 ◽  
Author(s):  
Dan Feng ◽  
Yue-Xing Chen ◽  
Liang-Wei Fu ◽  
Ju Li ◽  
Jia-Qing He
Keyword(s):  
Ball Milling ◽  
Thermoelectric Performance ◽  
Composite Engineering

scholarly journals Cost effective synthesis of p-type Zn-doped MgAgSb by planetary ball-milling with enhanced thermoelectric properties

RSC Advances ◽  
2018 ◽  
Vol 8 (62) ◽  
pp. 35353-35359 ◽  
Author(s):  
Yanyan Zheng ◽  
Chengyan Liu ◽  
Lei Miao ◽  
Hong Lin ◽  
Jie Gao ◽  
...  
Keyword(s):  
Ball Milling ◽  
Spark Plasma Sintering ◽  
Thermoelectric Properties ◽  
Cost Effective ◽  
Thermoelectric Performance ◽  
Plasma Sintering ◽  
Planetary Ball Milling ◽  
Spark Plasma ◽  
Effective Synthesis ◽  
P Type

Zn doped MgAgSb with improved purity and thermoelectric performance was synthesized via common planetary ball milling and spark plasma sintering.

Optimizing the thermoelectric performance of p-type Mg3Sb2 by Sn doping

Vacuum ◽  
2020 ◽  
Vol 177 ◽  
pp. 109388 ◽  
Author(s):  
Yang Wang ◽  
Xin Zhang ◽  
Yanqin Liu ◽  
Yangzhong Wang ◽  
Jiuxing Zhang ◽  
...  
Keyword(s):  
Thermoelectric Performance ◽  
Sn Doping ◽  
P Type

Effect of Sn Doping in (Bi0.25Sb0.75)2−x Sn x Te3 (0 ≤ x ≤ 0.1) on Thermoelectric Performance

2015 ◽  
Vol 45 (3) ◽  
pp. 1441-1446
Author(s):  
Zhengwei Cai ◽  
Lijie Guo ◽  
Xiaolong Xu ◽  
Yanci Yan ◽  
Kunling Peng ◽  
...  
Keyword(s):  
Thermoelectric Performance ◽  
Sn Doping

Parametric analysis of ball milling condition on thermoelectric performance of Bi0.6FeCo3Sb12 skutterudite

2018 ◽  
Vol 5 (10) ◽  
pp. 105008
Author(s):  
Ovik Raihan ◽  
Suhana Mohd Said ◽  
Mohd Faizul Mohd Sabri ◽  
Shaifulazuar Rozali ◽  
Bui Duc Long ◽  
...  
Keyword(s):  
Ball Milling ◽  
Parametric Analysis ◽  
Thermoelectric Performance ◽  
Milling Condition

scholarly journals Effect of gallium doping and ball milling process on the thermoelectric performance of n-type ZnO

2012 ◽  
Vol 27 (17) ◽  
pp. 2278-2285 ◽  
Author(s):  
Priyanka Jood ◽  
Germanas Peleckis ◽  
Xiaolin Wang ◽  
Shi Xue Dou
Keyword(s):  
Ball Milling ◽  
Milling Process ◽  
Thermoelectric Performance ◽  
Ball Milling Process ◽  
Gallium Doping ◽  
Image Position

Abstract

scholarly journals Enhanced thermoelectric performance of Sn-doped Cu3SbS4

2018 ◽  
Vol 6 (31) ◽  
pp. 8546-8552 ◽  
Author(s):  
Kan Chen ◽  
Cono Di Paola ◽  
Baoli Du ◽  
Ruizhi Zhang ◽  
Savio Laricchia ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Thermoelectric Performance ◽  
Sn Doping ◽  
Fine Microstructure

Enhanced thermoelectric performance of Cu3SbS4 with fine microstructure and optimized carrier concentration by Sn-doping.

The effect of Sn doping on thermoelectric performance of n-type half-Heusler NbCoSb

2017 ◽  
Vol 19 (37) ◽  
pp. 25683-25690 ◽  
Author(s):  
Lihong Huang ◽  
Qinyong Zhang ◽  
Yumei Wang ◽  
Ran He ◽  
Jing Shuai ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Thermoelectric Performance ◽  
Heusler Compounds ◽  
Sn Doping

Herein, Sn was successfully doped into the Sb site of n-type NbCoSb half-Heusler compounds to tune the carrier concentration, and a maximum ZT value of ∼0.56 was obtained at 973 K for NbCoSb1−xSnx with x = 0.2, an increase of ∼40% as compared to that of NbCoSb.

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