We discuss how electronic-structure calculations can be used to identify the dominant point defects that control the growth and dissolution of the oxide barrier layer formed if a metal comes into contact with a corrosive environment. Using the example of the Zn/ZnO/H2O interface we develop and apply a theoretical approach that is firmly based onab initiocomputed defect formation energies and that unifies concepts of semiconductor defect chemistry with electrochemical concepts. Employing this approach we find that the commonly invoked and chemically intuitive defects such as the doubly negatively charged oxygen vacancy in electrochemically formed ZnO films may not be present. Rather, hitherto not discussed defects such as the oxygen interstitial or unexpected charge states, such as the neutral oxygen vacancy, are found. These new defect types will be shown to critically impact our understanding of fundamental corrosion mechanisms and to provide new insight into strategies to develop alloys with higher corrosion resistance.
Identification of bulk oxide defects in an electrochemical environment