Simple algorithms for 1D oxygen concentration profile in an occluded region

2008 ◽  
Vol 50 (12) ◽  
pp. 3287-3295 ◽  
Author(s):  
F.M. Song
Keyword(s):  
Oxygen Concentration ◽  
Concentration Profile ◽  
Oxygen Concentration Profile

Atom Probe Microanalysis of Superconducting YBa2Cu3O7−x

1987 ◽  
Vol 99 ◽  
Author(s):  
S. S. Brenner ◽  
G. L. Kellogg
Keyword(s):  
Oxygen Concentration ◽  
Concentration Profile ◽  
Drift Tube ◽  
Atom Probe ◽  
Oxide Powders ◽  
Tube Type ◽  
Oxygen Concentration Profile

ABSTRACTSuperconducting YBa2Cu3O7−x needles prepared from hot-pressed discs of oxide powders were analyzed in a long drift-tube type atom probe. An analyses was made from a randomly located area about 2 nm in diameter. Most of the oxygen field-evaporated as O2+ ions. The measured composition agreed well with that of YBa2Cu3O6.5 except for yttrium which was found to be too high. The oxygen concentration profile showed fluctuations about 2.5 nm apart which must still be clarified.

Simulation of turbulence and dissolved oxygen concentration profiles over biofilm using k–ɛ turbulence model

2005 ◽  
Vol 52 (7) ◽  
pp. 181-186 ◽  
Author(s):  
H. Nagaoka ◽  
K. Sanda
Keyword(s):  
Mass Transfer ◽  
Dissolved Oxygen ◽  
Oxygen Concentration ◽  
Turbulence Model ◽  
Laser Doppler Velocimetry ◽  
Concentration Profiles ◽  
Doppler Velocimetry ◽  
Turbulent Model ◽  
Dissolved Oxygen Concentration ◽  
Oxygen Concentration Profile

The objective of this study is to investigate the flow structure over biofilm experimentally and theoretically. Velocity and turbulence profiles over biofilm measured by a laser Doppler velocimetry were compared to simulated profiles using the k–ɛ turbulent model. Also, dissolved oxygen concentration profiles over biofilm are measured using a micro DO sensor. The k–ɛ turbulence model was proved to be a useful tool for the understanding of mass transfer inside and outside biofilm. Dissolved oxygen concentration profile inside and outside biofilm showed the existence of turbulent diffusion inside biofilm.

High-resolution transmission electron microscopic study of highly oxygen doped silicon layer

1989 ◽  
Vol 47 ◽  
pp. 692-693
Author(s):  
H. Takaoka ◽  
M. Tomita ◽  
T. Hayashi
Keyword(s):  
High Resolution ◽  
Oxygen Concentration ◽  
Silicon Layer ◽  
Detailed Structure ◽  
Electron Microscopic ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Doped Silicon ◽  
Argon Ion

High resolution transmission electron microscopy (HRTEM) is the effective technique for characterization of detailed structure of semiconductor materials. Oxygen is one of the important impurities in semiconductors. Detailed structure of highly oxygen doped silicon has not clearly investigated yet. This report describes detailed structure of highly oxygen doped silicon observed by HRTEM. Both samples prepared by Molecular beam epitaxy (MBE) and ion implantation were observed to investigate effects of oxygen concentration and doping methods to the crystal structure.The observed oxygen doped samples were prepared by MBE method in oxygen environment on (111) substrates. Oxygen concentration was about 1021 atoms/cm3. Another sample was silicon of (100) orientation implanted with oxygen ions at an energy of 180 keV. Oxygen concentration of this sample was about 1020 atoms/cm3 Cross-sectional specimens of (011) orientation were prepared by argon ion thinning and were observed by TEM at an accelerating voltage of 400 kV.

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