Role of volatilization of molybdenum oxides during the cyclic oxidation of high-Mo containing Ni-based single crystal superalloys

2017 ◽  
Vol 129 ◽  
pp. 192-204 ◽  
Author(s):  
Lu Qin ◽  
Yanling Pei ◽  
Shusuo Li ◽  
Xinbao Zhao ◽  
Shengkai Gong ◽  
...  
Keyword(s):  
Single Crystal ◽  
Cyclic Oxidation ◽  
Molybdenum Oxides

scholarly journals Modeling of magneto-conductivity of bismuth selenide: a topological insulator

2021 ◽  
Vol 3 (4) ◽  
Author(s):  
Yogesh Kumar ◽  
Rabia Sultana ◽  
Prince Sharma ◽  
V. P. S. Awana
Keyword(s):  
Magnetic Field ◽  
Magnetic Fields ◽  
Single Crystal ◽  
Single Crystals ◽  
X Ray Diffraction ◽  
Field Range ◽  
X Ray ◽  
Bulk Carriers ◽  
Different Temperatures

AbstractWe report the magneto-conductivity analysis of Bi2Se3 single crystal at different temperatures in a magnetic field range of ± 14 T. The single crystals are grown by the self-flux method and characterized through X-ray diffraction, Scanning Electron Microscopy, and Raman Spectroscopy. The single crystals show magnetoresistance (MR%) of around 380% at a magnetic field of 14 T and a temperature of 5 K. The Hikami–Larkin–Nagaoka (HLN) equation has been used to fit the magneto-conductivity (MC) data. However, the HLN fitted curve deviates at higher magnetic fields above 1 T, suggesting that the role of surface-driven conductivity suppresses with an increasing magnetic field. This article proposes a speculative model comprising of surface-driven HLN and added quantum diffusive and bulk carriers-driven classical terms. The model successfully explains the MC of the Bi2Se3 single crystal at various temperatures (5–200 K) and applied magnetic fields (up to 14 T).

Oxide Mediated Epitaxial Growth of CoSi2 in a Single Deposition Step

1999 ◽  
Vol 564 ◽  
Author(s):  
S. Ohmi ◽  
R. T. Tung
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
Diffusion Barrier ◽  
Blocking Layer ◽  
Deposition Step

AbstractA number of modifications of the oxide-mediated epitaxy (OME) technique are presented which have enabled the growth of thick (∼25–40nm) epitaxial CoSi2 layers in a single deposition sequence. The uses of (a) a thin Ti cap, (b) a thin Ti blocking layer, (c) the codeposition of Co-rich CoSix, and (d) the co-deposition of Col−xTix. have all been shown to lead to improved epitaxial quality over the pure Co OME process, for Co thickness greater than 6nm. Essentially uniform, single crystal silicide layers of over 25nm have been grown in a single deposition step. These results are supportive of the proposed role of a diffusion barrier/kinetics retarder on the part of the interlayer in the OME and the Ti-interlayer mediated epitaxy processes.

Thermal cyclic oxidation and interdiffusion of NiCoCrAlYHf coating on a Ni-based single crystal superalloy

2016 ◽  
Vol 657 ◽  
pp. 616-625 ◽  
Author(s):  
Jinyan Zhong ◽  
Jianhua Liu ◽  
Xin Zhou ◽  
Songmei Li ◽  
Mei Yu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Cyclic Oxidation ◽  
Single Crystal Superalloy
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