Investigation of the passive layer on a solid-state sintered silicon carbide ceramic formed in sulfuric acid

2020 ◽  
Vol 173 ◽  
pp. 108690
Author(s):  
M. Schneider ◽  
K. Kremmer ◽  
M. Voigt ◽  
G. Grundmeier
Keyword(s):  
Silicon Carbide ◽  
Sulfuric Acid ◽  
Solid State ◽  
Passive Layer ◽  
Silicon Carbide Ceramic ◽  
Sintered Silicon

The effect of carbon on surface quality of solid-state-sintered silicon carbide as optical materials

2014 ◽  
Vol 89 ◽  
pp. 7-12 ◽  
Author(s):  
Jian Chen ◽  
Zhengren Huang ◽  
Zhongming Chen ◽  
Ming Yuan ◽  
Yan Liu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Solid State ◽  
Surface Quality ◽  
Optical Materials ◽  
Sintered Silicon

scholarly journals Microstructural designs of spark-plasma sintered silicon carbide ceramic scaffolds

2014 ◽  
Vol 53 (2) ◽  
pp. 93-100 ◽  
Author(s):  
B. Román-Manso ◽  
Á. De Pablos ◽  
M. Belmonte ◽  
M. I. Osendi ◽  
P. Miranzo
Keyword(s):  
Silicon Carbide ◽  
Silicon Carbide Ceramic ◽  
Spark Plasma ◽  
Sintered Silicon

Microstructures and properties of solid-state-sintered silicon carbide membrane supports

2019 ◽  
Vol 45 (16) ◽  
pp. 19888-19894 ◽  
Author(s):  
Yajie Li ◽  
Haibo Wu ◽  
Xuejian Liu ◽  
Zhengren Huang ◽  
Dongliang Jiang
Keyword(s):  
Silicon Carbide ◽  
Solid State ◽  
Sintered Silicon

Effect of Microstructure on Removal Mechanism of Solid State Sintered Silicon Carbide in Polishing Procedure

2010 ◽  
Vol 434-435 ◽  
pp. 21-23
Author(s):  
Jian Qin Gao ◽  
Zheng Ren Huang ◽  
Jian Chen ◽  
Gui Lin Liu ◽  
Xue Jian Liu
Keyword(s):  
Silicon Carbide ◽  
Solid State ◽  
Optical Materials ◽  
High Hardness ◽  
Pull Out ◽  
Sic Ceramics ◽  
Sic Ceramic ◽  
Mechanical Procedure ◽  
High Space ◽  
Sintered Silicon

Solid state sintered silicon carbide (S-SiC) ceramic is one of the top optical materials for high space reliability and other excellent properties. Two microstructures were produced by sintering under different conditions. The effects of microstructure on removal rates of SiC ceramics during polishing processes were studied. The material removal mechanisms during polishing were analysed and modeled. With the increase of the aspect ratio and grain diameter size during polishing, grain pull-out is more difficult in elongated grains than in exquiaxed grains. The SiC ceramic with high hardness has high removal resistance leading to get bad surface quality under the same mechanical procedure. The samples with elongated microstructure have low hardness and surface toughness.

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