Properties of undoped n-type ZnO film and N–In codoped p-type ZnO film deposited by ultrasonic spray pyrolysis

2004 ◽  
Vol 393 (1-3) ◽  
pp. 256-259 ◽  
Author(s):  
Jiming Bian ◽  
Xiaomin Li ◽  
Lidong Chen ◽  
Qin Yao
2006 ◽  
Vol 21 (09) ◽  
pp. 2185-2190 ◽  
Author(s):  
Jun-Liang Zhao ◽  
Xiao-Min Li ◽  
Sam Zhang ◽  
Chang Yang ◽  
Xiang-Dong Gao ◽  
...  

2008 ◽  
Vol 25 (9) ◽  
pp. 3400-3402 ◽  
Author(s):  
Wang Jing-Wei ◽  
Bian Ji-Ming ◽  
Liang Hong-Wei ◽  
Sun Jing-Chang ◽  
Zhao Jian-Ze ◽  
...  

2007 ◽  
Vol 90 (6) ◽  
pp. 062118 ◽  
Author(s):  
Jun-Liang Zhao ◽  
Xiao-Min Li ◽  
André Krtschil ◽  
Alois Krost ◽  
Wei-Dong Yu ◽  
...  

2007 ◽  
Vol 336-338 ◽  
pp. 589-592
Author(s):  
Jian Ling Zhao ◽  
Xiao Min Li ◽  
Ji Ming Bian ◽  
Wei Dong Yu ◽  
C.Y. Zhang

ZnO films were deposited on Si (100) substrate by ultrasonic spray pyrolysis at atmosphere. The film grown at optimum conditions is well crystallized with uniform, smooth and dense microstructure. Photoluminescence measurement shows a strong near band edge UV emission at 379nm and an almost undetectable deep-level emission band centered at 502nm. The resistivity of ZnO film is reduced by an order after N-In codoping, which produces p-type conduction with high hole concentration and hall mobility.


2005 ◽  
Vol 87 (9) ◽  
pp. 092101 ◽  
Author(s):  
X. Zhang ◽  
X. M. Li ◽  
T. L. Chen ◽  
C. Y. Zhang ◽  
W. D. Yu

2009 ◽  
Vol 94 (19) ◽  
pp. 192101 ◽  
Author(s):  
Bin Wang ◽  
Jiahua Min ◽  
Yue Zhao ◽  
Wenbin Sang ◽  
Changjun Wang

2011 ◽  
Vol 299-300 ◽  
pp. 436-439 ◽  
Author(s):  
Jia Hua Min ◽  
Xiao Yan Liang ◽  
Bin Wang ◽  
Yue Zhao ◽  
Yun Guo ◽  
...  

In this paper, the structure, electrical and optical properties and stabilities of Ag doped p-type ZnO thin films, prepared by electrostatic-enhanced ultrasonic spray pyrolysis were investigated. XRD and Hall data analyses indicated that the resistivity of 4at. % Ag doped p-type ZnO was low, without Ag2O phase separation. The optical transmission spectra illustrated that optical band gaps decreases with the gradual increase of Ag dopant. Moreover, ZnO: Ag films placed for 10 days still showed p-type, but the optical transmittance decreased, suggesting that AgZn in the ZnO: Ag thin films captured electrons to generate Agi, which reunited to be Ag nano-particles and decreased the optical transmittance of ZnO: Ag.


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