Nitrogen Plasma-Assisted Codoped P-type (In, N):SnO2 Ultra-Fine Thin Films and N-ZnO/p-In:SnO2 Core–Shell Heterojunction Diodes Fabricated by an Ultrasonic Spray Pyrolysis Method

CuInS2 thin films were prepared on heated glass substrates by ultrasonic spray pyrolysis method. Structure, surface morphology and properties of films with different Cu/In ratios have been investigated. X-ray diffraction (XRD) analysis demonstrated that as-prepared CuInS2 thin films with chalcopyrite structure have a preferential orientation along the (112) direction. SEM study shows films are relatively dense and smooth, but the much bigger grains and the large coherent agglomerates appear in films (Cu/In>1.25) due to the appearance of phase Cu2S. CuInS2 thin film (Cu/In=1.25) has a strong visible absorption and its energy band gap comes up to 1.45eV.

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Effect of Different S/In Ratio on Properties of In2S3 Films Prepared by Ultrasonic Spray Pyrolysis Method

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.474-476.998 ◽

2011 ◽

Vol 474-476 ◽

pp. 998-1001

Author(s):

Xiao Zhang ◽

Hua Wang ◽

Ji Wen Xu ◽

Ling Yang ◽

Ming Fang Ren

Keyword(s):

Thin Films ◽

Spray Pyrolysis ◽

Stoichiometric Composition ◽

Visible Region ◽

Ultrasonic Spray Pyrolysis ◽

Spray Pyrolysis Method ◽

Ultrasonic Spray ◽

Photoelectric Properties ◽

Pyrolysis Method ◽

Ultrasonic Spray Pyrolysis Method

In2S3 thin films have been prepared on heated glass substrates by ultrasonic spray pyrolysis method. Structure, surface morphology and properties of films with different S/In ratios have been investigated. XRD analysis demonstrated that as-prepared In2S3 thin films have a preferential orientation along the (220) direction and no other phases are observed. Uniformity, density, crystallinity of films were significantly affected by S/In ratios, which influence photoelectric properties of the films. In2S3 thin film is close to standard stoichiometric composition when S/In ratio is 2. Optical transmittance of films is over 90% in the visible region and its energy band gap come up to 2.46eV.

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Bismuth Doping Effect on Structural and Optical Properties of Nanocrystaline SnO2 Thin Films Grown by Ultrasonic Spray Pyrolysis Method

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2019.2442 ◽

2019 ◽

Vol 14 (1) ◽

pp. 59-71

Author(s):

R. Baghdad ◽

A. Reggad ◽

R. Lardjani ◽

T. Sahraoui ◽

N. Lemée ◽

...

Keyword(s):

Thin Films ◽

Optical Properties ◽

Spray Pyrolysis ◽

Ultrasonic Spray Pyrolysis ◽

Spray Pyrolysis Method ◽

Structural And Optical Properties ◽

Ultrasonic Spray ◽

Pyrolysis Method ◽

Sno2 Thin Films ◽

Bismuth Doping

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Characterization of CuInS2 Thin Films Grown by Transducer-based Ultrasonic Spray Pyrolysis for PV Solar Cells Applications

Journal of New Materials for Electrochemical Systems ◽

10.14447/jnmes.v19i3.329 ◽

2016 ◽

Vol 19 (3) ◽

pp. 169-179 ◽

Cited By ~ 1

Author(s):

Eric Nguwuo Petuenju ◽

Oumarou Savadogo

Keyword(s):

Thin Films ◽

Aqueous Solution ◽

Spray Pyrolysis ◽

Ultrasonic Spray Pyrolysis ◽

Spray Pyrolysis Method ◽

Ultrasonic Spray ◽

Pyrolysis Method ◽

Cuins2 Thin Films ◽

First Time

For the first time, the elaboration of CuInS2 thin films was achieved using the transducer-based ultrasonic spray pyrolysis method with methanol as solvent. Precursor solutions were prepared with copper dichloride dihydrate [CuCl2.2H2O], indium (III) chloride tetrahydrate [InCl3.4H2O] and thiourea [SC(NH2)2] at different ratios. In2S3 clusters (μdots) were obtained from an aqueous solution with precursors ratio Cu:In:S = 1.3:1:3.9, 1.4:1:3.9, 1.5:1:3.9. CuInS2 thin films were obtained from a solution of methanol with precursors ratio Cu:In:S = 1:1:4. The In concentration was 3 x 10-3 mol/l. The crystalline structure and their morphology ware characterised by SEM and their chemical composition by EDAX, The bandgap of CuInS2, equals to 1.40 eV, was determined by spectrophotometry.

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