Effect of anodic oxidation time on resistive switching memory behavior based on amorphous TiO2 thin films device

2018 ◽  
Vol 706 ◽  
pp. 477-482 ◽  
Author(s):  
Yanmei Yu ◽  
Feng Yang ◽  
Shuangsuo Mao ◽  
Shouhui Zhu ◽  
Yongfang Jia ◽  
...  
Keyword(s):  
Thin Films ◽  
Anodic Oxidation ◽  
Resistive Switching ◽  
Oxidation Time ◽  
Tio2 Thin Films ◽  
Resistive Switching Memory ◽  
Amorphous Tio2 ◽  
Behavior Based ◽  
Switching Memory

All-inorganic perovskite Cs4PbBr6 thin films in optoelectronic resistive switching memory devices with a logic application

2019 ◽  
Vol 45 (5) ◽  
pp. 5724-5730 ◽  
Author(s):  
Huaizu Cai ◽  
Meimei Lao ◽  
Jun Xu ◽  
Yukai Chen ◽  
Chujie Zhong ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Memory Devices ◽  
Inorganic Perovskite ◽  
Resistive Switching Memory ◽  
Switching Memory

Resistive Switching Memory based on Silver-doped Chitosan Thin Films

MRS Advances ◽  
2018 ◽  
Vol 3 (33) ◽  
pp. 1943-1948 ◽  
Author(s):  
C. Strobel ◽  
T. Sandner ◽  
S. Strehle
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Tin Oxide ◽  
Bottom Electrode ◽  
Low Cost ◽  
Memory Devices ◽  
Neuromorphic Computing ◽  
Resistive Switching Memory ◽  
Switching Behaviour ◽  
Switching Memory

AbstractMemristors represent an intriguing two-terminal device strategy potentially able to replace conventional memory devices as well as to support neuromorphic computing architectures. Here, we present the resistive switching behaviour of the sustainable and low-cost biopolymer chitosan, which can be extracted from natural chitin present for instance in crab exoskeletons. The biopolymer films were doped with Ag ions in varying concentrations and sandwiched between a bottom electrode such as fluorinated-tin-oxide and a silver top electrode. Silver-doped devices showed an overall promising resistive switching behaviour for doping concentrations between 0.5 to 1 wt% AgNO3. As bottom electrode fluorinated-tin-oxide, nickel, silver and titanium were studied and multiple write and erase cycles were recorded. However, the overall reproducibility and stability are still insufficient to support broader applicability.

Nanoscale Topotactic Phase Transformation in SrFeO x Epitaxial Thin Films for High‐Density Resistive Switching Memory

2019 ◽  
Vol 31 (49) ◽  
pp. 1903679 ◽  
Author(s):  
Junjiang Tian ◽  
Haijun Wu ◽  
Zhen Fan ◽  
Yang Zhang ◽  
Stephen J. Pennycook ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transformation ◽  
Resistive Switching ◽  
High Density ◽  
Epitaxial Thin Films ◽  
Resistive Switching Memory ◽  
Switching Memory

Hydrothermal synthesis of nanoporous lead selenide thin films: photoelectrochemical and resistive switching memory applications

2019 ◽  
Vol 30 (19) ◽  
pp. 17725-17734 ◽  
Author(s):  
Tejasvinee S. Bhat ◽  
Archana S. Kalekar ◽  
Dhanaji S. Dalavi ◽  
Chetan C. Revadekar ◽  
Atul C. Khot ◽  
...  
Keyword(s):  
Thin Films ◽  
Hydrothermal Synthesis ◽  
Resistive Switching ◽  
Lead Selenide ◽  
Resistive Switching Memory ◽  
Memory Applications ◽  
Switching Memory

Investigation of physically transient resistive switching memory based on GeO2 thin films

2020 ◽  
Vol 117 (19) ◽  
pp. 192102
Author(s):  
Julin Feng ◽  
Wei Hu ◽  
Fanju Zeng ◽  
Hao Lin ◽  
Liye Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Switching Memory

scholarly journals Environmental factors controlled resistive switching memory behavior based on BiFeO3/Cu2ZnSnSe4 heterojunction

2019 ◽  
Vol 13 ◽  
pp. 102308 ◽  
Author(s):  
Xiaoxia Li ◽  
Bai Sun ◽  
Wentao Hou ◽  
Jiao Chen ◽  
Pingping Zheng ◽  
...  
Keyword(s):  
Environmental Factors ◽  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Behavior Based ◽  
Switching Memory

Resistive Switching Memory Properties of Electrodeposited Cu2O Thin Films

2020 ◽  
Vol 12 (2) ◽  
pp. 02035-1-02035-4
Author(s):  
Rohini R. Patil ◽  
◽  
Shubham V. Patil ◽  
Amey M. Sabnis ◽  
Kishorkumar V. Khot ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Cu2o Thin Films ◽  
Switching Memory

Tunable defect engineering in TiON thin films by multi-step sputtering processes: from a Schottky diode to resistive switching memory

2017 ◽  
Vol 5 (25) ◽  
pp. 6319-6327 ◽  
Author(s):  
Teng-Yu Su ◽  
Chi-Hsin Huang ◽  
Yu-Chuan Shih ◽  
Tsang-Hsuan Wang ◽  
Henry Medina ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Schottky Diode ◽  
Defect Engineering ◽  
Resistive Switching Memory ◽  
Switching Memory

The role of defect engineering is essential in resistive switching memory.

Resistive switching memory devices based on electrical conductance tuning in poly(4-vinyl phenol)–oxadiazole composites

2015 ◽  
Vol 17 (44) ◽  
pp. 29978-29984 ◽  
Author(s):  
Yanmei Sun ◽  
Fengjuan Miao ◽  
Rui Li ◽  
Dianzhong Wen
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Electrical Conductance ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Nonvolatile Memory Devices ◽  
Vinyl Phenol ◽  
Switching Memory

Nonvolatile memory devices, based on electrical conductance tuning in thin films of poly(4-vinyl phenol) (PVP) and 2-(4-tert-butylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole (PBD) composites, are fabricated.

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