Atomic structure and defect densities in low dielectric constant carbon doped hydrogenated silicon oxide films, deposited by plasma-enhanced chemical vapor deposition

2002 ◽  
Vol 92 (8) ◽  
pp. 4605-4611 ◽  
Author(s):  
V. Ligatchev ◽  
T. K. S. Wong ◽  
B. Liu ◽  
Rusli
Keyword(s):  
Dielectric Constant ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Low Dielectric Constant ◽  
Hydrogenated Silicon ◽  
Carbon Doped ◽  
Low Dielectric ◽  
Defect Densities

Effect of Fluorine Addition to Plasma-Enhanced Chemical Vapor Deposition Silicon Oxide Film

1996 ◽  
Vol 443 ◽  
Author(s):  
S. W. Lim ◽  
M. Miyata ◽  
T. Naito ◽  
Y. Shimogaki ◽  
Y. Nakano ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Polarization Component ◽  
Low Dielectric ◽  
Step Coverage

AbstractOne solution to reduce the time constant of ultra large scale integrated circuit (ULSI) is the use of a low dielectric constant intermetal film like fluorinated silicon oxide (SiOF). We could obtain SiOF films with low dielectric constant as low as 2.6 and good step coverage by adding CF4 to SiH4 and N2O in plasma-enhanced chemical vapor deposition (PECVD) process. To investigate the dielectric constants due to each polarization and the reason for the decrease in the dielectric constant, we used capacitance-voltage (C-V) and ellipsometry measurements, and Kramers-Kronig transformation. The decrease in dielectric constant could not be completely explained by the reduction in ionic and electronic polarization. We could detect silanol groups, Si-OH in the films and their decrease with increasing CF4 flow rate. It is suggested that the main polarization component to decrease dielectric constant is such as orientational polarization. The step coverage of film was improved by adding CF4. It is suggested that the reduction in the sticking probability of films forming species due to the change in surface state improved the step coverage.

Preparation of low dielectric constant F‐doped SiO2 films by plasma enhanced chemical vapor deposition

1996 ◽  
Vol 68 (6) ◽  
pp. 832-834 ◽  
Author(s):  
Sang Woo Lim ◽  
Yukihiro Shimogaki ◽  
Yoshiaki Nakano ◽  
Kunio Tada ◽  
Hiroshi Komiyama
Keyword(s):  
Dielectric Constant ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Dielectric Constant ◽  
Sio2 Films ◽  
Low Dielectric
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