Leakage current analysis of diamond Schottky barrier diodes by defect imaging

Homoepitaxial layers with different growth pit density were grown on 4H-SiC Si-face substrates by changing C/Si ratio, and the influence of the growth pit density on Schottky barrier diodes and metal-oxide-semiconductor capacitors were investigated. Even though there were many growth pits on the epi-layer, growth pit density did not affect the leakage current of Schottky barrier diodes and lifetime of constant current time dependent dielectric breakdown. By analyzing the growth pit shape, the aspect ratio of the growth pit was considered to be the key factor to the leakage current of the Schottky barrier diodes and the lifetime of metal-oxide-semiconductor capacitors.

Download Full-text

Large-size (1.7 × 1.7 mm2) β-Ga2O3 field-plated trench MOS-type Schottky barrier diodes with 1.2 kV breakdown voltage and 109 high on/off current ratio

Applied Physics Express ◽

10.35848/1882-0786/ac4080 ◽

2021 ◽

Vol 15 (1) ◽

pp. 016501

Author(s):

Fumio Otsuka ◽

Hironobu Miyamoto ◽

Akio Takatsuka ◽

Shinji Kunori ◽

Kohei Sasaki ◽

...

Keyword(s):

Schottky Barrier ◽

Leakage Current ◽

Schottky Barrier Diodes ◽

Wafer Level ◽

Current Ratio ◽

Field Plate ◽

Low Leakage ◽

Large Size ◽

Forward Current ◽

Low Leakage Current

Abstract We fabricated high forward and low leakage current trench MOS-type Schottky barrier diodes (MOSSBDs) in combination with a field plate on a 12 μm thick epitaxial layer grown by halide vapor phase epitaxy on β-Ga2O3 (001) substrate. The MOSSBDs, measuring 1.7 × 1.7 mm2, exhibited a forward current of 2 A (70 A cm−2) at 2 V forward voltage and a leakage current of 5.7 × 10–10 A at −1.2 kV reverse voltage (on/off current ratio of > 109) with an ideality factor of 1.05 and wafer-level specific on-resistance of 17.1 mΩ · cm2.

Download Full-text

Conduction mechanisms of the reverse leakage current of 4H-SiC Schottky barrier diodes

Semiconductor Science and Technology ◽

10.1088/1361-6641/aaf8cb ◽

2019 ◽

Vol 34 (2) ◽

pp. 025016 ◽

Cited By ~ 3

Author(s):

A Latreche

Keyword(s):

Schottky Barrier ◽

Leakage Current ◽

Schottky Barrier Diodes ◽

Reverse Leakage Current ◽

Conduction Mechanisms

Download Full-text

High Temperature capable SiC Schottky diodes, based on buried grid design.

Additional Conferences (Device Packaging HiTEC HiTEN & CICMT) ◽

10.4071/hitec-tp11 ◽

2014 ◽

Vol 2014 (HITEC) ◽

pp. 000058-000060

Author(s):

Tomas Hjort ◽

Adolf Schöner ◽

Andy Zhang ◽

Mietek Bakowski ◽

Jang-Kwon Lim ◽

...

Keyword(s):

High Temperature ◽

Schottky Barrier ◽

Leakage Current ◽

Schottky Diode ◽

Schottky Diodes ◽

Electrical Characteristics ◽

Schottky Barrier Diodes ◽

Grid Design ◽

High Temperature Operation

Electrical characteristics of 4H-SiC Schottky barrier diodes, based on buried grid design are presented. The diodes, rated to 1200V/10A and assembled into high temperature capable TO254 packages, have been tested and studied up to 250°C. Compared to conventional SiC Schottky diodes, Ascatron's buried grid SiC Schottky diode demonstrates several orders of magnitude reduced leakage current at high temperature operation.

Download Full-text