High Temperature capable SiC Schottky diodes, based on buried grid design.

2014 ◽  
Vol 2014 (HITEC) ◽  
pp. 000058-000060
Author(s):  
Tomas Hjort ◽  
Adolf Schöner ◽  
Andy Zhang ◽  
Mietek Bakowski ◽  
Jang-Kwon Lim ◽  
...  
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Diode ◽  
Schottky Diodes ◽  
Electrical Characteristics ◽  
Schottky Barrier Diodes ◽  
Grid Design ◽  
High Temperature Operation

Electrical characteristics of 4H-SiC Schottky barrier diodes, based on buried grid design are presented. The diodes, rated to 1200V/10A and assembled into high temperature capable TO254 packages, have been tested and studied up to 250°C. Compared to conventional SiC Schottky diodes, Ascatron's buried grid SiC Schottky diode demonstrates several orders of magnitude reduced leakage current at high temperature operation.

Effect of Thermal Treatment for Pd and PdSi Schottky Contacts on p-GaN

2006 ◽  
Vol 517 ◽  
pp. 242-246
Author(s):  
C.K. Tan ◽  
Azlan Abdul Aziz ◽  
F.K. Yam ◽  
C.W. Lim ◽  
Hassan Zainuriah ◽  
...  
Keyword(s):  
Thermal Treatment ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Diode ◽  
Schottky Diodes ◽  
Schottky Contacts ◽  
Electrical Characteristics ◽  
Barrier Heights

Pd Schottky diode exhibited stable rectifying behavior up to 500°C for 35 minutes in sequential annealing; with the Schottky barrier heights (SBHs), ΦB (I-V) of 0.6-0.7eV with the leakage current (LC) of 20 A at -5V. With the same range of SBHs, PdSi diodes were stable up to 500°C for 5 minutes with the LC of 0.182mA at -5V. The electrical characteristics obtained in this study are also compared with those obtained for Pd and PdSi Schottky diodes on p-GaN.

scholarly journals Electric dipole effect in PdCoO2/β-Ga2O3 Schottky diodes for high-temperature operation

2019 ◽  
Vol 5 (10) ◽  
pp. eaax5733 ◽  
Author(s):  
T. Harada ◽  
S. Ito ◽  
A. Tsukazaki
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Extreme Environments ◽  
Oxide Interface ◽  
Electric Dipoles ◽  
Bandgap Semiconductors ◽  
High Temperature Operation

High-temperature operation of semiconductor devices is widely demanded for switching/sensing purposes in automobiles, plants, and aerospace applications. As alternatives to conventional Si-based Schottky diodes usable only at 200°C or less, Schottky interfaces based on wide-bandgap semiconductors have been extensively studied to realize a large Schottky barrier height that makes high-temperature operation possible. Here, we report a unique crystalline Schottky interface composed of a wide-gap semiconductor β-Ga2O3 and a layered metal PdCoO2. At the thermally stable all-oxide interface, the polar layered structure of PdCoO2 generates electric dipoles, realizing a large Schottky barrier height of ~1.8 eV, well beyond the 0.7 eV expected from the basal Schottky-Mott relation. Because of the naturally formed homogeneous electric dipoles, this junction achieved current rectification with a large on/off ratio approaching 108 even at a high temperature of 350°C. The exceptional performance of the PdCoO2/β-Ga2O3 Schottky diodes makes power/sensing devices possible for extreme environments.

Origin of Leakage Current in SiC Schottky Barrier Diodes at High Temperature

2004 ◽  
Vol 457-460 ◽  
pp. 997-1000 ◽  
Author(s):  
Hiroaki Saitoh ◽  
Tsunenobu Kimoto ◽  
Hiroyuki Matsunami
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Barrier Diodes

NOVEL HIGH TEMPERATURE ANNEALED SCHOTTKY METAL FOR GaN DEVICES

2011 ◽  
Vol 20 (03) ◽  
pp. 417-422
Author(s):  
QUENTIN DIDUCK ◽  
IAN WALSH ◽  
DUBRAVKO BABIĆ ◽  
LESTER F. EASTMAN
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Leakage Current ◽  
Ohmic Contacts ◽  
Schottky Diodes ◽  
Metal System ◽  
Gan Hemt ◽  
Order Of Magnitude ◽  
Alignment Marks

We have found that Scandium metal is near ohmic as deposited on GaN , but when it is annealed at high temperatures a large barrier height Schottky forms. In this study we used Sc - Au contacts to form Schottky barrier diodes on AlGaN / GaN HEMT material. We have found that the morphology remains unchanged even after an 800 degrees centigrade anneal. This investigation has revealed that the reverse leakage current of this metal system is an order of magnitude lower than a conventional Ni - Au contact and supports a reverse breakdown that is 1/3rd larger. The similarity of the anneal temperatures to ohmic contacts enable gates and contacts to be annealed at the same time thus simplifying processing. The lack of morphology change supports the use of Sc - Au for E -beam alignment marks as well. Diode contacts on AlGaN / GaN with Schottky-ohmic separation of 10 microns demonstrated reverse breakdown in excess of 100V when the contacts were annealed at 800C. These results suggest this metallization may have applications as a new HEMT gate metal, and Schottky diodes.

scholarly journals Reduction of reverse leakage current at the TiO2/GaN interface in field plate Ni/Au/n-GaN Schottky diodes

2021 ◽  
Vol 24 (04) ◽  
pp. 399-406
Author(s):  
A.M. Goriachko ◽  
◽  
M.V. Strikha ◽  
◽  
Keyword(s):  
Leakage Current ◽  
Schottky Diode ◽  
Schottky Diodes ◽  
Electrical Characteristics ◽  
Temperature Dependent ◽  
Field Plate ◽  
Reverse Leakage Current ◽  
Plate Length ◽  
Fabrication Procedure ◽  
Field Oxide

This paper presents the fabrication procedure of TiO2 passivated field plate Schottky diode and gives a comparison of Ni/Au/n-GaN Schottky barrier diodes without field plate and with field plate of varying diameters from 50 to 300 µm. The influence of field oxide (TiO2) on the leakage current of Ni/Au/n-GaN Schottky diode was investigated. This suggests that the TiO2 passivated structure reduces the reverse leakage current of Ni/Au/n-GaN Schottky diode. Also, the reverse leakage current of Ni/Au/n-GaN Schottky diodes decreases as the field plate length increases. The temperature-dependent electrical characteristics of TiO2 passivated field plate Ni/Au/n-GaN Schottky diodes have shown an increase of barrier height within the temperature range 300…475 K.

1700V, 20A 4H-SiC DMOSFETs Optimized for High Temperature Operation

2011 ◽  
Vol 679-680 ◽  
pp. 633-636 ◽  
Author(s):  
Brett A. Hull ◽  
Sei Hyung Ryu ◽  
Q. Jon Zhang ◽  
Charlotte Jonas ◽  
Michael J. O'Loughlin ◽  
...  
Keyword(s):  
High Temperature ◽  
Leakage Current ◽  
Entire Temperature Range ◽  
Electrical Characteristics ◽  
Switching Circuit ◽  
Inductive Load ◽  
Temperature Range ◽  
Continuous Current ◽  
Switching Characteristics ◽  
High Temperature Operation

DMOSFETs fabricated in 4H-SiC with capabilities for blocking in excess of 1700V and conducting 20A continuous current in the on-state are presented. These SiC DMOSFETs remain functional to temperatures in excess of 225°C, with leakage current at 1700V at 225°C of less than 5 A with VGS = 0V. The DMOSFETs show excellent switching characteristics, with total switching energy of 1.8 to 1.95 mJ over the entire temperature range of testing (25°C to 200°C), when switched from the blocking state at 1200V to conducting at 20A in a clamped inductive load switching circuit. The electrical characteristics are compared to commercially available Si IGBTs rated to 1700V with similar current ratings as the SiC DMOSFET described herein.

scholarly journals Effects of Al Composition and High-Temperature Atomic Layer-Deposited Al2O3 Layer on the Leakage Current Characteristics of AlGaN/GaN Schottky Barrier Diodes

Crystals ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 87
Author(s):  
Jae-Hoon Lee ◽  
Jung-Hee Lee ◽  
Ki-Sik Im
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Photoelectron Spectroscopy ◽  
Surface States ◽  
Atomic Layer ◽  
Schottky Barrier Diodes ◽  
Al2o3 Layer ◽  
Large Bulk ◽  
Surface Leakage

AlGaN/GaN Schottky barrier diodes (SBDs) with high Al composition and high temperature atomic layer deposition (ALD) Al2O3 layers were investigated. Current–voltage (I–V), X-ray photoelectron spectroscopy (XPS), atomic force microscope (AFM), and capacitance–voltage (C–V) measurements were conducted in order to find the leakage current mechanism and reduce the reverse leakage current. The fabricated AlGaN/GaN SBDs with high Al composition exhibited two orders’ higher leakage current compared to the device with low Al composition (20%) due to large bulk and surface leakage components. The leakage current measured at −60 V for the fabricated SBD with Al2O3 deposited at temperature of 550 °C was decreased to 1.5 μA, compared to the corresponding value of 3.2 mA for SBD with nonpassivation layer. The high quality ALD Al2O3 deposited at high temperature with low interface trap density reduces the donorlike surface states, which effectively decreases surface leakage current of the AlGaN/GaN SBD.

Stacking faults: Origin of leakage current in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes

2021 ◽  
Vol 118 (17) ◽  
pp. 172106
Author(s):  
Sayleap Sdoeung ◽  
Kohei Sasaki ◽  
Satoshi Masuya ◽  
Katsumi Kawasaki ◽  
Jun Hirabayashi ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Vapor Phase ◽  
Stacking Faults ◽  
Schottky Barrier Diodes
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