Study of microwave discharge at high power density conditions in diamond chemical vapor deposition reactor by optical emission spectroscopy

2019 ◽  
Vol 97 ◽  
pp. 107407 ◽  
Author(s):  
S.A. Bogdanov ◽  
A.M. Gorbachev ◽  
A.L. Vikharev ◽  
D.B. Radishev ◽  
M.A. Lobaev
2008 ◽  
Vol 6 (3) ◽  
pp. 218-221
Author(s):  
王志军 Zhijun Wang ◽  
董丽芳 Lifang Dong ◽  
李盼来 Panlai Li ◽  
尚勇 Yong Shang ◽  
何寿杰 Shoujie He

1996 ◽  
Vol 11 (11) ◽  
pp. 2852-2860 ◽  
Author(s):  
H. C. Barshilia ◽  
B. R. Mehta ◽  
V. D. Vankar

Microwave plasma chemical vapor deposition (MWPCVD) process has been used to grow diamond thin films on silicon substrates from CH4–H2 gas mixture. Bias-enhanced nucleation (BEN) pretreatment has been used to increase the density of diamond nuclei. Various species in the CH4–H2 plasma have been identified using optical emission spectroscopy (OES), and their effect on the film microstructure has been studied. During the pretreatment process the emission intensities of CH, CH+, C2, H, and H2* species have been found to increase significantly for a negative dc bias voltage |VB| > 60 V. The higher concentration of excited species and the associated effects play a significant role in the growth process. A very thin layer of a-C containing predominant sp3 bonded carbon species in the initial stages of the growth is found to be present in these films. The microstructure of the films has been found to be very sensitive to the biasing conditions.


2015 ◽  
Vol 52 (10) ◽  
pp. 103003 ◽  
Author(s):  
易成 Yi Cheng ◽  
王传新 Wang Chuanxin ◽  
熊江 Xiong Jiang ◽  
范咏志 Fan Yongzhi ◽  
汪建华 Wang Jianhua ◽  
...  

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