Characterization of electrode/electrolyte interface using in situ X-ray reflectometry and LiNi0.8Co0.2O2 epitaxial film electrode synthesized by pulsed laser deposition method

2007 ◽  
Vol 53 (2) ◽  
pp. 871-881 ◽  
Author(s):  
Masaaki Hirayama ◽  
Kazuyuki Sakamoto ◽  
Tetsuya Hiraide ◽  
Daisuke Mori ◽  
Atsuo Yamada ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Epitaxial Film ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Film Electrode ◽  
Deposition Method ◽  
X Ray ◽  
Electrolyte Interface

Growth of BN Thin Films by Pulsed Laser Deposition

1991 ◽  
Vol 235 ◽  
Author(s):  
J. A. Knapp
Keyword(s):  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Wavelength ◽  
Laser Deposition ◽  
Strong Function ◽  
Ablation Plasma ◽  
Clean Sample

ABSTRACTA new UHV system for pulsed laser deposition of materials is described, together with results from preliminary experiments for depositions of BN on Si. The system is designed to allow for in-situ diagnostics of the ablation plasma, as well as UHV preparation and characterization of clean sample substrates. The room temperature depositions of BN result in amorphous, B-rich films, whose particle content is a strong function of laser wavelength.

Growth of Epitaxial a-Axis and c-Axis Oriented Sr2RuO4 Films

1995 ◽  
Vol 401 ◽  
Author(s):  
S. Madhavan ◽  
B. J. Gibbons ◽  
A. Dabkowski ◽  
H. A. Dabkowska ◽  
S. Trolier-Mckinstry ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Epitaxial Films ◽  
Temperature Measurements ◽  
Laser Deposition ◽  
Metallic Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Oriented Films

AbstractEpitaxial films of Sr2RuO4 have been grown in situ by pulsed laser deposition on (100) LaAlO3 and (100) LaSrGaO4 substrates. X-ray diffraction results show that the films are single domain and grow c-axis oriented on (100) LaAlO3 and a-axis oriented on (100) LaSrGaO4 substrates. X-ray ø-scans indicate epitaxial alignment of the film and substrate in-plane axes in both cases. Resistivity versus temperature measurements reveal that the as-grown c-axis oriented films are semiconducting and the a-axis oriented films are metallic. The metallic films grown so far were found to be non-superconducting down to 50 mK.

X‐ray characterization of extremely high quality (Sr,Ba)TiO3 films grown by pulsed laser deposition

1995 ◽  
Vol 66 (13) ◽  
pp. 1605-1607 ◽  
Author(s):  
S. B. Qadri ◽  
J. S. Horwitz ◽  
D. B. Chrisey ◽  
R. C. Y. Auyeung ◽  
K. S. Grabowski
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Quality ◽  
X Ray

X-ray characterization of LiNbO3 films grown by pulsed laser deposition on SrTiO3(1 0 0), NdGaO3(1 1 0) and MgO(1 1 1) substrates

2000 ◽  
Vol 216 (1-4) ◽  
pp. 335-342 ◽  
Author(s):  
M.A Tagliente ◽  
L De Caro ◽  
A Sacchetti ◽  
L Tapfer ◽  
G Balestrino ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray

Growth of Bn Thin Films by Pulsed Laser Deposition

1991 ◽  
Vol 236 ◽  
Author(s):  
J. A. Knapp
Keyword(s):  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Wavelength ◽  
Laser Deposition ◽  
Strong Function ◽  
Ablation Plasma ◽  
Clean Sample

AbstractA new UHV system for pulsed laser deposition of materials is described, together with results from preliminary experiments for depositions of BN on Si. The system is designed to allow for in-situ diagnostics of the ablation plasma, as well as UHV preparation and characterization of clean sample substrates. The room temperature depositions of BN result in amorphous, B-rich films, whose particle content is a strong function of laser wavelength.

scholarly journals Structure Quality of LuFeO3 Epitaxial Layers Grown by Pulsed-Laser Deposition on Sapphire/Pt

Materials ◽  
2019 ◽  
Vol 13 (1) ◽  
pp. 61 ◽  
Author(s):  
Sondes Bauer ◽  
Adriana Rodrigues ◽  
Lukáš Horák ◽  
Xiaowei Jin ◽  
Reinhard Schneider ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Lattice Parameter ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray

Structural quality of LuFeO 3 epitaxial layers grown by pulsed-laser deposition on sapphire substrates with and without platinum Pt interlayers has been investigated by in situ high-resolution X-ray diffraction (reciprocal-space mapping). The parameters of the structure such as size and misorientation of mosaic blocks have been determined as functions of the thickness of LuFeO 3 during growth and for different thicknesses of platinum interlayers up to 40 nm. By means of fitting of the time-resolved X-ray reflectivity curves and by in situ X-ray diffraction measurement, we demonstrate that the LuFeO 3 growth rate as well as the out-of-plane lattice parameter are almost independent from Pt interlayer thickness, while the in-plane LuFeO 3 lattice parameter decreases. We reveal that, despite the different morphologies of the Pt interlayers with different thickness, LuFeO 3 was growing as a continuous mosaic layer and the misorientation of the mosaic blocks decreases with increasing Pt thickness. The X-ray diffraction results combined with ex situ scanning electron microscopy and high-resolution transmission electron microscopy demonstrate that the Pt interlayer significantly improves the structure of LuFeO 3 by reducing the misfit of the LuFeO 3 lattice with respect to the material underneath.

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